THE EFFECT OF SHORT CHANNEL ON NANOSCALE SOI MOSFETs

TLDR: In this article, the authors used quantum mechanical transport models for n-channel MOSFETs based on the selfconsistent Schrodinger and Poisson equations for the simulation of short channel effects.

Abstract: Double gate silicon-on-insulator (DG SOI) devices have recently been of great interest, particularly for the investigation of sub-10nm field-effect transistor [1]-[3]. As the channel length is reduced from one transistor generation to the next, the susceptibility of the transistor to short-channel effects (SCE) is monitored in several ways such as threshold voltage (VTH) roll-off, sub-threshold voltage swing, and the drain induced barrier low, the channel length decreases and becomes crucial in deep-submicrometer technologies. As an indicator of these short channel effects, the threshold voltage and sub-threshold voltage swing has been extensively investigated [4]-[7]. In order to maintain a tolerable degree of short channel effect [8], it becomes necessary to reduce the SOI film thickness. Reducing the SOI film thickness causes a high electric field in the perpendicular direction to the Si/SiO2 interface, strongly confining charge carriers in the channel. Several interesting models have been proposed for the classical (i.e., without quantum effects) drain current [9]-[11]. Carrier quantization effects have been considered for the first time in [12]. Therefore, classical models that disregard these effects are no longer suitable for describing sub 10nm MOSFETs. Therefore, we use quantum mechanical transport models for n-channel MOSFETs based on the self-consistent Schrodinger and Poisson equations for the simulation of short channel effects on the performance of DGMOSFET. In addition to it, the model is continuous over all gate and drain bias ranges, which makes it very suitable to simulate novel silicon transistor structures. 2. Results