Journal ArticleDOI
The intrinsic relationship between the kink-and-tail and box-shaped zinc diffusion profiles in n-GaSb
TLDR
Zhang et al. as mentioned in this paper found that the Ga atoms from the diffusion sources suppressed the formation of the high-concentration surface diffusion fronts in Zn profiles, thus converting the kink-and-tail-shaped profile to the box-shape profile.Abstract:
Different diffusion sources were used to study Zn diffusion in n-GaSb. We found that the Ga atoms from the diffusion sources suppressed the formation of the high-concentration surface diffusion fronts in Zn profiles, thus converting the kink-and-tail-shaped profile to the box-shaped profile. Our analysis demonstrated that both the surface and the tail regions in the kink-and-tail profiles showed high-quality regularities. The analysis also revealed that the formation mechanism of the box profiles is the same as that of the tail region of the kink-and-tail profiles. The similarities of the photoluminescence signals between the main region of the box profiles and the tail region of the kink-and-tail profiles substantiated our findings.read more
Citations
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Journal ArticleDOI
Performance Improvement of the GaSb Thermophotovoltaic Cells With n-Type Emitters
TL;DR: In this article, a GaSb cell with n-type emitters was evaluated under low temperature radiations and found to have huge potentials for the use in low-temperature thermophotovoltaic systems.
Journal ArticleDOI
A novel zinc diffusion process for the fabrication of high-performance GaSb thermophotovoltaic cells
Liangliang Tang,Hong Ye,Jiu Xu +2 more
TL;DR: In this article, a closed quartz-tube diffusion system using Zn-Ga alloys as the diffusion source was designed to realize p-type doping in N-GaSb wafers.
Journal ArticleDOI
A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations.
Mansur Mohammed Ali Gamel,Hui Jing Lee,Wan Emilin Suliza Wan Abdul Rashid,Pin Jern Ker,Lau Kuen Yau,Mahammad A. Hannan,Md. Zaini Jamaludin +6 more
TL;DR: In this article, a critical review on two dominant types of semiconductor materials, namely gallium antimonide (GaSb) and indium gallium arsenide (InGaAs), as the potential candidates for TPV cells is presented.
Journal ArticleDOI
The Theoretical Performance of GaInAsSb and GaSb Cells Versus IR Emitter Temperature in Thermophotovoltaic Systems
TL;DR: In this article, numerical simulation is used to evaluate GaInAsSb and GaSb cells with similar structures under different radiation temperatures, and it is shown that GaInSb cell with n-type emitters show slightly higher output power densities compared with those for Ga Sb cells below 1500 K given-blackbody radiation, but the power density of the GaSB cells will surpass the former's above this temperature point.
Book ChapterDOI
A Novel Zinc Diffusion Process for Fabrication of High Performance GaSb Thermophotovoltaic Cells
Liangliang Tang,Hong Ye +1 more
TL;DR: In this article, a closed quartz-tube diffusion system using Zn-Ga alloys as the diffusion sources is designed to realize p-type doping in N-GaSb wafers, the surface high-concentration zinc diffusion region is suppressed by this diffusion method, the GaSb cells fabricated using this method shows good quantum efficiency in the near-infrared bands.
References
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Journal ArticleDOI
Statistical theory of the boundary friction of atomically flat solid surfaces in the presence of a lubricant layer
TL;DR: In this article, a rheological model and a thermodynamic model are proposed for describing the melting of an ultrathin lubricant film between atomically flat solid surfaces, allowing for the stress and strain dependence of the lubricant shear modulus.
Journal ArticleDOI
Diffusion of zinc in gallium arsenide: A new model
Ulrich Gösele,F. Morehead +1 more
TL;DR: In this article, a kick-out model was proposed to explain the diffusion of Zn in GaAs which could not be satisfactorily explained in terms of a Frank-Turnbull mechanism involving vacancies can be understood with a ''kick-out'' model in which the equilibrium between interstitial and substitutional Zn is established via gallium interstitials.
Journal ArticleDOI
Diffusion with Interstitial-Substitutional Equilibrium. Zinc in GaAs
Leonard R. Weisberg,J. Blanc +1 more
Journal ArticleDOI
A photoluminescence and Hall‐effect study of GaSb grown by molecular‐beam epitaxy
TL;DR: In this article, an intentionally doped gallium antimonide has been grown by molecular beam epitaxy on gallium arsenide and gallium anti-antimonide, and a strong correlation has been found between the quality of the layers and the degree of excess antimony flux; the best material was obtained with the minimum antimony stable growth at a particular substrate temperature.
Journal ArticleDOI
Growth properties of GaSb: The structure of the residual acceptor centres
TL;DR: In this article, the influence of direction of growth, melt composition and growth speed upon the relative occurrence of the residual acceptor centers in melt-grown GaSb single crystals was studied.