Journal ArticleDOI
Theoretical Interpretations of the Gap State Density Determined from the Field Effect and Capacitance-Voltage Characteristics of Amorphous Semiconductors
TLDR
In this article, an exact theory for the electronic density of bulk gap states in amorphous semiconductors from field effect and capacitance-voltage measurements is presented, where the analytical expression for the density of the gap states is given as a function of the surface potential of amorphou semiconductor.Abstract:
An exact theory for the calculation of the electronic density of bulk gap states in amorphous semiconductors from field effect and capacitance-voltage measurements is presented. The analytical expression for the density of the gap states is given as a function of the surface potential of amorphous semiconductors. It is also shown that the influence of surface states on the measured gap states can be completely eliminated by combining a capacitance-voltage method with a field effect technique.read more
Citations
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Proceedings ArticleDOI
Optimal Integration and Characteristics of Vertical Array Devices for Ultra-High Density, Bit-Cost Scalable Flash Memory
Yoshiaki Fukuzumi,Yasuyuki Matsuoka,Masaru Kito,M. Kido,Motoyuki Sato,Hiroyasu Tanaka,Y. Nagata,Yoshihisa Iwata,Hideaki Aochi,Akihiro Nitayama +9 more
TL;DR: In this article, the optimal process integration for array devices of bit-cost scalable (BiCS) flash memory is successfully developed, which adopts SiN-based gate dielectrics for the consistency with the gate-first process which is unique to BiCS flash technology, and "macaroni" body FETs for better controllability over the sub-threshold characteristics of depletion-mode poly-silicon transistors.
Journal ArticleDOI
Determination of gap state density in polycrystalline silicon by field‐effect conductance
TL;DR: In this article, the density of states (DOS) in polycrystalline silicon was obtained from the analysis of the field effect conductance (FEC) of the silicon.
Journal ArticleDOI
Polycrystalline silicon-germanium thin-film transistors
Tsu-Jae King,Krishna C. Saraswat +1 more
TL;DR: In this paper, the fabrication of p-and n-channel MOS thin-film transistors in polycrystalline silicon-germanium (poly-Si/sub 1-x/Ge/sub x/) films is described, and their electrical characteristics are presented.
Journal ArticleDOI
Field-effect analysis for the determination of gap-state density and Fermi-level temperature dependence in polycrystalline silicon
TL;DR: In this paper, the relationship between the surface potential and the gate voltage, which determines the gap-state density, has been deduced according to the incremental method, already proposed by Suzuki et al., and a new method is based on the temperature dependence of the derivative of the field-effect conductance with respect to gate voltage.
Journal ArticleDOI
Analysis of charge transport in a polycrystalline pentacene thin film transistor by temperature and gate bias dependent mobility and conductance
TL;DR: In this article, the gate bias and temperature dependent field effect mobility and conductance of a polycrystalline pentacene thin film transistor (TFT) were analyzed to study the charge transport in the material.
References
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Journal ArticleDOI
Determination of the Density of State Distribution of a-Si: H by Isothermal Capacitance Transient Spectroscopy
TL;DR: In this article, an ICTS theory for a system of continuously-distributed gap states is given and experimental data by the ICTs applied to P-doped a-Si:H Schottky barrier diode are presented.