Journal ArticleDOI
Theory of the thin film transistor
TLDR
In this paper, a theoretical model for a polycrystalline film is proposed which takes account of the potential barriers at the intergrain boundaries and the band bending at the semiconductor/insulator interface.About:
This article is published in Thin Solid Films.The article was published on 1976-10-18. It has received 29 citations till now. The article focuses on the topics: Band bending & Thin-film transistor.read more
Citations
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An all‐organic "soft" thin film transistor with very high carrier mobility
Journal ArticleDOI
Polythienylenevinylene thin‐film transistor with high carrier mobility
TL;DR: In this paper, a thin-film transistor with high carrier mobility has been fabricated using precursor-route poly(2,5thienylenevinylene) (PTV) as semiconductor.
Journal ArticleDOI
All‐organic thin‐film transistors made of alpha‐sexithienyl semiconducting and various polymeric insulating layers
TL;DR: In this article, a strong correlation was found between the dielectric constant of the insulator and the field effect mobility of TFTs made on a SiO2 layer.
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All-organic thin-film transistors made of poly(3-butylthiophene) semiconducting and various polymeric insulating layers
TL;DR: In this paper, the authors have fabricated fully patterned all-organic thin-film transistors with a variety of organic polymer insulators, and they have built top-gate structures with gates printed on top of the gate dielectric layer.
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Polythiophene field‐effect transistor with polypyrrole worked as source and drain electrodes
TL;DR: In this article, the authors attributed the depression of the channel current at no gate bias to the barrier against hole transport formed inside the polythiophene layer and near the interface with polypyrrole.
References
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Journal ArticleDOI
Theory of Photoconductivity in Semiconductor Films
TL;DR: In this paper, the authors analyzed a model which incorporates the above characteristics of a photoconductive film, except for the space charge effects, and derived numerical values for responsivity, noise, and sensitivity.
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Barrier-limited mobility in thin semiconductor films
TL;DR: In this article, the simple Boltzmann expression for an intercrystalline potential barrier can be applied to low gap non-parabolic band materials, with certain limitations, and experimental results on InSb thin films are presented, in support of this view.
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Barrier-limited conductivity in thin film transistors
TL;DR: In this paper, a simple model for barrier-limited conductivity in a thin semiconductor film is extended to take account of the band bending at the semiconductor-insulator interface in thin-film transistor structures.
Journal ArticleDOI
Photoconductivity in thin films of lead telluride
Mino Green,R.E. Miles +1 more
TL;DR: In this article, the authors investigated the photoconductivity of 1 μm lead telluride films with 100 ns light pulses and showed that the results were quantitatively consistent with a lowering of intergranular potential barriers which exist in oxygen-exposed films.