Journal ArticleDOI
Thermoelectric properties of porous silicon
J. de Boor,D. S. Kim,X. Ao,Michael Becker,N. F. Hinsche,Ingrid Mertig,Ingrid Mertig,Peter Zahn,Volker Schmidt +8 more
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TLDR
In this article, the thermoelectric properties of porous silicon, a nanostructured, yet single-crystalline form of silicon, were studied using electrochemical etching, liquid-phase doping, and high-temperature passivation.Abstract:
We have studied the thermoelectric properties of porous silicon, a nanostructured, yet single-crystalline form of silicon. Using electrochemical etching, liquid-phase doping, and high-temperature passivation, we show that porous Si can be fabricated such that it has thermoelectric properties superior to bulk Si, for both n- and p-type doping. Hall measurements reveal that the charge carrier mobility is reduced compared to the bulk material which presently limits the increase in thermoelectric efficiency.read more
Citations
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Journal ArticleDOI
Extreme Low Thermal Conductivity in Nanoscale 3D Si Phononic Crystal with Spherical Pores
Lina Yang,Nuo Yang,Baowen Li +2 more
TL;DR: A nanoscale three-dimensional Si phononic crystal (PnC) with spherical pores, which can reduce the thermal conductivity of bulk Si by a factor up to 10,000 times at room temperature, is proposed.
Journal ArticleDOI
Extreme low thermal conductivity in nanoscale 3D Si phononic crystal with spherical pores.
Lina Yang,Nuo Yang,Baowen Li +2 more
TL;DR: In this article, a nanoscale three-dimensional (3D) Si phononic crystal (PnC) with spherical pores was proposed, which can reduce the thermal conductivity of bulk Si by a factor up to 10,000 times at room temperature.
Journal ArticleDOI
Silicon nanostructures for thermoelectric devices: A review of the current state of the art
TL;DR: In this article, the authors provide an overview over the physical background of silicon as thermoelectric converter material as well as different nanostructures like nanowires, porous nanomeshes, and nanocrystalline bulk.
Journal ArticleDOI
Robust scalable synthesis of surfactant-free thermoelectric metal chalcogenide nanostructures
TL;DR: In this article, a low-cost ambient aqueous method for the scalable synthesis of surfactant-free nanostructured metal chalcogenides (MaXb, M=Cu, Ag, Sn, Pb, and Bi; X=S, Se, and Te; a=1 or 2; and b= 1 or 3) is developed.
Journal ArticleDOI
A Thermoelectric Generator Using Porous Si Thermal Isolation
TL;DR: A thermoelectric generator (TEG) using thermal isolation provided by a thick porous Si layer locally formed on the Si wafer and thermocouples composed of p-doped polycrystalline Si/Al is reported on.
References
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Journal ArticleDOI
Enhanced thermoelectric performance of rough silicon nanowires
Allon I. Hochbaum,Renkun Chen,Raul Diaz Delgado,Wenjie Liang,Erik C. Garnett,Mark Najarian,Arun Majumdar,Arun Majumdar,Peidong Yang,Peidong Yang +9 more
TL;DR: In this article, the authors report the electrochemical synthesis of large-area, wafer-scale arrays of rough Si nanowires that are 20-300 nm in diameter.
Journal ArticleDOI
Silicon nanowires as efficient thermoelectric materials
TL;DR: Independent measurements of the Seebeck coefficient, the electrical conductivity and the thermal conductivity, combined with theory, indicate that the improved efficiency originates from phonon effects, and these results are expected to apply to other classes of semiconductor nanomaterials.
Book ChapterDOI
A method of measuring specific resistivity and hall effect of discs of arbitrary shape
Journal ArticleDOI
Electrolytic shaping of germanium and silicon
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI
Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
Guido Masetti,M. Severi,S. Solmi +2 more
TL;DR: In this article, the electron mobility data for both arsenic-and boron-doped silicon are presented in the high doping range, and it is shown that electron mobility is significantly lower in As-and Boron-Doped silicon for carrier concentrations higher than 1019cm-3.