Journal ArticleDOI
Thickness dependence of the properties of highly c-axis textured AlN thin films
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TLDR
In this paper, the influence of film thickness on the material properties of aluminum nitride (AlN) thin films deposited on Pt(111) electrodes has been investigated experimentally by means of x-ray diffraction, dielectric response, atomic force microscopy, interferometry measurement of effective d33, and residual stress measurement.Abstract:
The influence of film thickness on the material properties of aluminum nitride (AlN) thin films deposited on Pt(111) electrodes has been investigated experimentally by means of x-ray diffraction, dielectric response, atomic force microscopy, interferometry measurement of effective d33, and residual stress measurement. The thickness was varied between 35 nm and 2 μm. Full width at mid-height of the rocking curve decreased from 2.60 to 1.14°, rms roughness increased from 3.8 to 18.6 A, the effective d33, namely d33,f, from 2.75 to 5.15 pm/V. The permittivity eAlN was stable at 10.2, whereas the dielectric losses decreased from 1% to 0.1%. The breakdown electric field under dc voltages varied between 4.0 and 5.5 MV/cm.read more
Citations
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Ferroelectric thin films: Review of materials, properties, and applications
Nava Setter,Dragan Damjanovic,L. Eng,Glen R. Fox,Spartak Gevorgian,Seungbum Hong,Angus I. Kingon,Hermann Kohlstedt,N. Y. Park,G. B. Stephenson,I. Stolitchnov,A. K. Taganstev,D. V. Taylor,Tomoaki Yamada,Stephen K. Streiffer +14 more
TL;DR: An overview of the state of the art in ferroelectric thin films is presented in this paper, where the authors review applications: micro-systems' applications, applications in high frequency electronics, and memories based on Ferroelectric materials.
Journal ArticleDOI
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TL;DR: This communication reports a hightemperature piezoelectric material that exhibits a good balance between high maximum use temperature and large piez Zoelectricity, achieved by the combination of the discovery of a phase transition in scandium aluminum nitride (ScxAl1 xN) alloy thin films and the use of dual co-sputtering, which leads to nonequilibrium alloy thin Films.
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A Review on Piezoelectric Energy Harvesting: Materials, Methods, and Circuits
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TL;DR: In this paper, the state-of-the-art in micro-scale piezoelectric energy harvesting, summarizing key metrics such as power density and bandwidth of reported structures at low frequency input.
Journal ArticleDOI
Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films
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Piezoelectric MEMS for energy harvesting
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References
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Journal ArticleDOI
Measurement of piezoelectric coefficients of ferroelectric thin films
K. Lefki,G. J. M. Dormans +1 more
TL;DR: In this article, the normal load method is used to measure the coefficients for PZT thin films with various compositions prepared by the solgel technique or by organometallic chemical vapor deposition (OMCVD).
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Interferometric measurements of electric field-induced displacements in piezoelectric thin films
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Journal ArticleDOI
Properties of aluminum nitride thin films for piezoelectric transducers and microwave filter applications
M.-A. Dubois,Paul Muralt +1 more
TL;DR: In this paper, a thin-film bulk acoustic resonator (TFBAR) with fundamental resonance at 3.6 GHz has been fabricated to assess resonator properties, and the material parameters derived from the thickness resonance were a coupling factor k=0.23 and a sound velocity vs.
Journal ArticleDOI
Zero-Temperature-Coefficient SAW Devices on AlN Epitaxial Films
K. Tsubouchi,N. Mikoshiba +1 more
TL;DR: In this article, the authors present technologies de couches minces de AlN for integrer the dispositifs a onde acoustique de surface, with a coefficient de variation thermique nul fonctionnant.
Zero-Temperature-Coefficient SAW Devices on A1N Epitaxial Films
Kazuo Tsubouchi,Nobuo +1 more
TL;DR: In this article, the authors present technologies de couches minces de AlN for integrer the dispositifs a onde acoustique de surface, with a coefficient de variation thermique nul fonctionnant.
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