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Thin-Film Transistors
Cherie R. Kagan,Paul Andry +1 more
TLDR
In this article, the authors describe the properties of thin-film transistors and their properties, and present a historical perspective (II-VI semiconducting channel materials for TFTs), W. Howard and Mark Brodsky amorphous silicon and polycrystalline silicon TFT, S.J. Fonash device structures, Jerzy Kanicki organic small molecule TFT and Christos D. Dimitrakopoulos organic oligomers.Abstract:
Introduction and device characteristics of thin-film transistors, Michael S. Shur historical perspective (II-VI semiconducting channel materials for TFTs), W. Howard and Mark Brodsky amorphous silicon and polycrystalline silicon TFTs, S.J. Fonash device structures of amorphous silicon, Jerzy Kanicki organic small molecule TFTs, Christos D. Dimitrakopoulos organic oligomers as semiconducting channel materials for TFTs, Francis Garnier solution deposited organic semiconductors for TFTs -molecules to polymers, Zhenan Bao and Howard Katz organic-inorganic hybrid TFTs, Cherie Kagan and David Mitzi integration and deposition of organic semiconductors for TFTs, John Rogers and Ananth Dodabalapur TFTs in active-matrix liquid crystaldisplays, Kouji Susuki and F. Libsch future applications, Richard Friend.read more
Citations
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
PatentDOI
Stretchable form of single crystal silicon for high performance electronics on rubber substrates
TL;DR: In this article, the authors present stretchable and printable semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed, or otherwise deformed.
Journal ArticleDOI
PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors
TL;DR: These nanocrystal field-effect transistors allow reversible switching between n- and p-transport, providing options for complementary metal oxide semiconductor circuits and enabling a range of low-cost, large-area electronic, optoelectronic, thermoelectric, and sensing applications.
Journal ArticleDOI
Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors
TL;DR: In this paper, a-IGZO is used as the channel layer for flexible and transparent TFTs. But, the performance of the flexible TFT was evaluated at room temperature and at temperatures up to 500 °C.
Journal ArticleDOI
Present status of amorphous In–Ga–Zn–O thin-film transistors
TL;DR: Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs.
Related Papers (5)
An experimental study of the source/drain parasitic resistance effects in amorphous silicon thin film transistors
Shengwen Luan,Gerold W. Neudeck +1 more