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Thin-Film Transistors

TLDR
In this article, the authors describe the properties of thin-film transistors and their properties, and present a historical perspective (II-VI semiconducting channel materials for TFTs), W. Howard and Mark Brodsky amorphous silicon and polycrystalline silicon TFT, S.J. Fonash device structures, Jerzy Kanicki organic small molecule TFT and Christos D. Dimitrakopoulos organic oligomers.
Abstract
Introduction and device characteristics of thin-film transistors, Michael S. Shur historical perspective (II-VI semiconducting channel materials for TFTs), W. Howard and Mark Brodsky amorphous silicon and polycrystalline silicon TFTs, S.J. Fonash device structures of amorphous silicon, Jerzy Kanicki organic small molecule TFTs, Christos D. Dimitrakopoulos organic oligomers as semiconducting channel materials for TFTs, Francis Garnier solution deposited organic semiconductors for TFTs -molecules to polymers, Zhenan Bao and Howard Katz organic-inorganic hybrid TFTs, Cherie Kagan and David Mitzi integration and deposition of organic semiconductors for TFTs, John Rogers and Ananth Dodabalapur TFTs in active-matrix liquid crystaldisplays, Kouji Susuki and F. Libsch future applications, Richard Friend.

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Journal ArticleDOI

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
PatentDOI

Stretchable form of single crystal silicon for high performance electronics on rubber substrates

TL;DR: In this article, the authors present stretchable and printable semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed, or otherwise deformed.
Journal ArticleDOI

PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors

TL;DR: These nanocrystal field-effect transistors allow reversible switching between n- and p-transport, providing options for complementary metal oxide semiconductor circuits and enabling a range of low-cost, large-area electronic, optoelectronic, thermoelectric, and sensing applications.
Journal ArticleDOI

Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

TL;DR: In this paper, a-IGZO is used as the channel layer for flexible and transparent TFTs. But, the performance of the flexible TFT was evaluated at room temperature and at temperatures up to 500 °C.
Journal ArticleDOI

Present status of amorphous In–Ga–Zn–O thin-film transistors

TL;DR: Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs.
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