Journal ArticleDOI
Transferred Electron Amplifiers and Oscillators
C. Hilsum
- Vol. 50, Iss: 2, pp 185-189
TLDR
In this article, the conditions for negative resistance were examined and calculations made for GaSb and semi-insulating GaAs, and it appeared that negative resistances should be observable in both these materials.Abstract:
In some semiconductors the conduction band system has two minima separated by only a small energy, and the lower minimum has associated with it a smaller electron effective mass than the upper minimum. At high electric fields it should be possible to transfer electrons to the upper minimum where they will have a lower mobility. The conductivity of a homogeneous crystal bar can therefore decrease as the field is increased, and it is conceivable that a differential negative resistance could be obtained. The conditions needed for obtaining negative resistance are examined, and calculations made for GaSb and semi-insulating GaAs. It appears that negative resistances should be observable in both these materials.read more
Citations
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Journal ArticleDOI
Semiconducting and other major properties of gallium arsenide
TL;DR: In this paper, the authors provide numerical and graphical information about many physical and electronic properties of GaAs that are useful to those engaged in experimental research and development on this material, including properties of the material itself, and the host of effects associated with the presence of specific impurities and defects is excluded from coverage.
Journal ArticleDOI
Theory of negative-conductance amplification and of Gunn instabilities in "two-valley" semiconductors
D.E. McCumber,A.G. Chynoweth +1 more
TL;DR: In this paper, a theory of negativeconductance amplification and Gunn effect oscillation for two-valley semiconductors such as GaAs and InP is presented. Butler et al. proposed a conduction-band model in which the relative populations of two valleys of vastly different mobility are determined by the average electron temperature.
Journal ArticleDOI
Negative differential resistance through real‐space electron transfer
TL;DR: In this article, a new mechanism is proposed to obtain negative differential resistance in layered heterostructures for conduction parallel to the interface, based on hot-electron thermionic emission from high mobility GaAs into low mobility AlxGa1−xAs.
Journal ArticleDOI
Semiclassical transport and phonon scattering of electrons in semiconducting carbon nanotubes
Gary Pennington,Neil Goldsman +1 more
TL;DR: In this paper, the current flow, considering a semiclassical electron--electric-field interaction and electron scattering by acoustic phonons, is studied in semiconducting zig-zag carbon nanotubes.
Journal ArticleDOI
Hot electrons in low-dimensional structures
TL;DR: The properties of hot electrons in systems where electrons and phonons experience quantum confinement are reviewed in this paper, particularly with reference to the principal scattering mechanism, and the experimental and theoretical data relating to this form a large part of the review.
References
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Journal ArticleDOI
The Possibility of Negative Resistance Effects in Semiconductors
Brian K. Ridley,T B Watkins +1 more
TL;DR: In this paper, the Boltzmann equation is used to obtain conditions for negative resistance effects in semiconductors, and the conditions required to obtain negative resistance are discussed generally and more specific conditions are obtained for some simple cases of spherical and ellipsoidal bands by solving the Boltzman equation, and it is shown that the most favorable case is when the sub-bands are sufficiently separated in energy for the emission of optical phonons to be the dominant mechanism for energy relaxation.
Journal ArticleDOI
Band Structure and Electron Transport of GaAs
TL;DR: In this article, the authors reviewed and analyzed existing experimental data on GaAs to yield the band structure in the vicinity of the band edges as well as the parameters characterizing the bands summarized in Fig. 1 of this paper.
Journal ArticleDOI
The influence of interelectronic collisions on conduction and breakdown in polar crystals
TL;DR: In this paper, the variation of electron mobility with an increasing applied field and also the collective dielectric breakdown field, assuming that interelectronic collisions are sufficiently frequent to determine the energy and momentum distributions of the electron gas.
Journal ArticleDOI
Experimental Investigation of Conduction Band of GaSb
TL;DR: In this article, the conduction band of GaSb was investigated by making the following measurements on a number of $n$-type samples with different carrier concentrations: (1) Hall effect and conductivity between 1.5 and 1.8 ev.