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Book ChapterDOI

Transparent Ferroelectric Ceramics I. Composition, Structure and Requirements for Production

A. Krumins, +1 more
- pp 50-60
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TLDR
In this paper, the unique electrooptic and photoelectric properties of TFC are used in a number of solid state optoelectronic devices, particularly in high-speed light modulators and shutters, thermal and light filters, electrically controlled colour filters, alphanumeric displays, block data composers, video projectors, and optolectronic voltmeters.
Abstract
Due to their technological and raw material availability as well as resistance to corrosion and irradiation, ceramics are considered optimum materials to solve a number of scientific and technical problems. Studies and applications are progressing rapidly [1,2]. At present, transparent ferroelectric ceramics (TFC) have not yet established for themselves any significant fraction of the market for applications based on capacitance, ferrite, piezo- and constructional ceramics, ceramic substrates etc. However, the unique electrooptic and photoelectric properties of TFC are used in a number of solid state optoelectronic devices, particularly in high-speed light modulators and shutters, thermal and light filters, electrically controlled colour filters, alphanumeric displays, block data composers, video projectors and optoelectronic voltmeters.

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Journal ArticleDOI

Transparent ferroelectric ceramics: Properties and applications

A. Sternberg
- 01 Mar 1989 - 
TL;DR: In this article, a review is given concerning up-to-date methods of the transparent ferroelectric ceramics (TFC) production (chemical coprecipitation of raw material, two-stage hot-pressing, etc.), its application in optoelectronic devices (large-aperture modulators, linear light gate arrays, segmented displays) and possible new developments (near IR modulators including).
Journal ArticleDOI

Domain structure evolution in relaxor PLZT 8/65/35 ceramics after chemical etching and electron beam irradiation

TL;DR: In this paper, the evolution of domain structure and its evolution on the surface of PLZT 8/65/35 ceramics after selective chemical etching and e-beam irradiation was studied.
Journal ArticleDOI

Thermo-Optical Investigation of Sodium-Bismuth Titanate Single Crystal and PLZT Ceramics

TL;DR: In this paper, a comparison of TO signals for several doped PLZT materials reveals that 0.5 wt.% Cu doping is responsible for improved thermal lensing parameters interpreted by optimal light absorption, heat transfer and possible PT adjustment.
References
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Journal ArticleDOI

Hot‐Pressed (Pb,La)(Zr,Ti)O3 Ferroelectric Ceramics for Electrooptic Applications

TL;DR: In this paper, transparent ferroelectric ceramic materials suitable for a variety of electrooptic applications were found in the quaternary (Pb,La,Zr,Ti)O3 system.
Journal ArticleDOI

Effects of impurity doping in lead zirconate-titanate ceramics

TL;DR: In this article, the authors investigated the effect of impurity doping on the properties of lead zirconate-titanate ceramics from the internal bias field viewpoint.
Journal ArticleDOI

Plausible Concepts Necessary and Sufficient for Interpretation of Ceramic Grain‐Boundary Phenomena: I, Grain‐Boundary Characteristics, Structure, and Electrostatic Potential

TL;DR: In this article, analogies between grain boundaries in metals and nonmetals, direct observations of grain-boundary characteristics, and inferences about the atomic structure of grain boundaries are reviewed.
Journal ArticleDOI

Order-disorder reactions in the ferroelectric perovskites Pb(Sc1/2Nb1/2)O3 and Pb(Sc1/2Ta1/2)O3. II. Relation between ordering and properties

TL;DR: The ordering of the trivalent and pentavalent cations in the perovskites Pb(Sc 1/2Nb1/2)O3 can be varied by suitable heat treatments.
Journal ArticleDOI

Ferroelectric ceramic electrooptic materials and devices

TL;DR: In this article, the effect of light scattering properties on the orientation of the ceramic polar axis (electrical poling direction) has been investigated and shown to be independent of the magnitude of electrical poling (ferroelectric remanence state).
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