Journal ArticleDOI
Transparent SnO x thin films fabricated by radio frequency reactive sputtering with a SnO/Sn composite target
TLDR
In this article, a SnO/Sn composite target was used to produce a chemically stable composition of SnO x thin film while controlling structural defects by chemical reaction between tin and oxygen.About:
This article is published in Thin Solid Films.The article was published on 2017-07-31. It has received 14 citations till now. The article focuses on the topics: Thin film & Sputtering.read more
Citations
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Journal ArticleDOI
Rolled-up SnO2 nanomembranes: A new platform for efficient gas sensors
Xianghong Liu,Xianghong Liu,Tiantian Ma,Yongshan Xu,Li Sun,Lingli Zheng,Oliver G. Schmidt,Jun Zhang,Jun Zhang +8 more
TL;DR: In this article, a tubular SnO2 nanomembranes were fabricated by the rolled-up technology and investigated as the sensing element for chemiresistive gas sensors.
Journal ArticleDOI
P-type SnO thin films prepared by reactive sputtering at high deposition rates
C. Guillén,J. Herrero +1 more
TL;DR: In this paper, the structural, optical and electrical properties of tin oxide thin films were analyzed as a function of the oxygen partial pressure in the sputtering atmosphere and of the post-deposition annealing temperature in air.
Journal ArticleDOI
Intrinsic and extrinsic doping contributions in SnO2 and SnO2:Sb thin films prepared by reactive sputtering
C. Guillén,J. Herrero +1 more
TL;DR: In this paper, the structural, optical and electrical properties of SnO2 thin films were analyzed for the layers prepared at different oxygen partial pressures in the sputtering atmosphere, as-grown and after heating in air at several temperatures.
Journal ArticleDOI
Organic-free synthesis of nanostructured SnO 2 thin films by chemical solution deposition
TL;DR: In this article, a novel synthetic approach for preparation of single phase porous SnO2 thin films with controllable grain size and porosity has been developed, which requires neither organic solvents nor addition of any complexing agent.
Book ChapterDOI
Optical properties of tin oxide nanomaterials
TL;DR: In this paper, the optical properties of SnO2 nanomaterials have been studied based on the available literature of the last two to three decades, and it was observed that the particle size plays an important role and quantum confinement effects appear when the particle sizes are comparable to Bohr excitonic radius and band-to-band transitions appears.
References
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Journal ArticleDOI
Optical Properties and Electronic Structure of Amorphous Germanium
Jan Tauc,R. Grigorovici,A. Vancu +2 more
TL;DR: In this article, the optical constants of amorphous Ge were determined for the photon energies from 0.08 to 1.6 eV, and the absorption is due to k-conserving transitions of holes between the valence bands as in p-type crystals.
Journal ArticleDOI
X-ray line broadening from filed aluminium and wolfram
G.K Williamson,W.H Hall +1 more
TL;DR: In this paper, the authors used a Geiger counter spectrometer to measure the changes in intensity distribution in the spectra of cold worked aluminium and wolfram and found that the line breadths may be attributed to simultaneous small particle size and strain broadening, the latter predominating at the higher Bragg angles.
Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Journal ArticleDOI
The surface and materials science of tin oxide
Matthias Batzill,Ulrike Diebold +1 more
TL;DR: A review of surface science studies of single crystal surfaces, but selected studies on powder and polycrystalline films are also incorporated in order to provide connecting points between surface sciences studies with the broader field of materials science of tin oxide as discussed by the authors.
Journal ArticleDOI
Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
TL;DR: In this article, a chemical design concept of ionic amorphous oxide semiconductor (IAOS) and its unique electron transport properties, and electronic structure, by comparing them with those of conventional ammorphous semiconductors is addressed.