Journal ArticleDOI
Transport properties and origin of ferromagnetism in (Ga, Mn)As
TLDR
In this paper, the authors measured the magnetic properties of a diluted magnetic semiconductor based on III-V semiconductors and determined the $p\ensuremath{-}d$ exchange between holes and Mn $3d$ spins.Abstract:
Magnetotransport properties of $p$-type ferromagnetic (Ga,Mn)As, a diluted magnetic semiconductor based on III-V semiconductors, are measured and the $p\ensuremath{-}d$ exchange between holes and Mn $3d$ spins is determined. The ferromagnetic transition temperatures calculated based on the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction using the exchange reproduce remarkably well the observed ferromagnetic transition temperatures, demonstrating that ferromagnetism of (Ga,Mn)As has its origin in the RKKY interaction mediated by holes.read more
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Journal ArticleDOI
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
TL;DR: Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
Journal ArticleDOI
Making Nonmagnetic Semiconductors Ferromagnetic
TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
Journal ArticleDOI
Electrical spin injection in a ferromagnetic semiconductor heterostructure
TL;DR: In this paper, the authors reported the fabrication of all-semiconductor, light-emitting spintronic devices using III-V heterostructures based on gallium arsenide.
Journal ArticleDOI
Injection and detection of a spin-polarized current in a light-emitting diode
TL;DR: In this article, the magnetic semiconductor BexMnyZn1-x-ySe is used as a spin aligner to inject spin-polarized charge into a non-magnetic semiconductor device.
Journal ArticleDOI
A Group-IV Ferromagnetic Semiconductor: MnxGe1−x
Yun Daniel Park,Aubrey T. Hanbicki,Steven C. Erwin,C. S. Hellberg,James M. Sullivan,J. E. Mattson,T. Ambrose,A. Wilson,George Spanos,Berend T. Jonker +9 more
TL;DR: Calculated spin interactions and percolation theory predict transition temperatures larger than measured, consistent with the observed suppression of magnetically active Mn atoms and hole concentration.