Journal ArticleDOI
Ultra-shallow P+/N junctions formed by recoil implantation
Reads0
Chats0
TLDR
In this paper, a thin boron film is first deposited onto the Si wafer surface, and then the atoms are knocked into the Si substrate by Ge implantation or Ar plasma source ion implantation.Abstract:
The concept of recoil implantation is proposed to facilitate fabrication of ultrashallow p+/n junctions. In this method, a thin boron film is first deposited onto the Si wafer surface. Then the boron atoms are knocked into the Si substrate by Ge implantation or Ar plasma source ion implantation. Dopant activation and damage removal are achieved via rapid thermal annealing. Preliminary results show the realization of sub-100 nm deep p+/n junctions with this technique. Monte Carlo simulations were performed to predict the recoiled boron profiles, and agree well with the experimental results.read more
Citations
More filters
Journal ArticleDOI
Effects of electric current on solid state phase transformations in metals
TL;DR: In this article, the influence of an electric current on the following solid state transformations in metals are considered: (1) intermetallic compound formation and growth in diffusion couples, (2) precipitation, (3) crystallization of amorphous alloys and (4) recrystallization and grain growth of cold worked metals.
Journal ArticleDOI
Electromigration effect upon the Sn–0.7 wt% Cu/Ni and Sn–3.5 wt% Ag/Ni interfacial reactions
Chih-Ming Chen,Sinn-wen Chen +1 more
TL;DR: In this paper, the effect of electromigration upon the interfacial reactions between the promising lead-free solders, Sn-Cu and Sn-Ag, with Ni substrate was investigated, and only one intermetallic compound Ni3Sn4 with ∼7 at.
Journal ArticleDOI
High-flux current effects in interfacial reactions in Au–Al multilayers
TL;DR: In this article, the influence of high dc currents on the interaction between thin Au-Al layers was investigated over the temperature range 400-500°C, in both the absence and the presence of a current at all levels.
Journal ArticleDOI
Electromigration effects on compound growth at interfaces
H. T. Orchard,A.L. Greer +1 more
TL;DR: In this article, the effects of interdiffusion in microelectronic devices were analyzed by including electromigration-driven interchange of atomic species in a conventional analysis of reaction layer thickness.
Journal ArticleDOI
Electromigration effect upon the Zn/Ni and Bi/Ni interfacial reactions
Chih-Ming Chen,Sinn-wen Chen +1 more
TL;DR: In this article, the authors investigated the electromigration effect upon the Zn/Ni and Bi/Ni interfacial reactions by using reaction couple techniques, and they found that passage of a 300 A/cm2 electric current through the two types of couples did not change phase formation, and growth rates of the NiBi3 phase in the couples reacted at 185°C and 200°C were not affected by passage of electric currents.
References
More filters
Journal ArticleDOI
Material and electrical properties of ultra-shallow p/sup +/-n junctions formed by low-energy ion implantation and rapid thermal annealing
TL;DR: In this paper, a study of low-energy ion implantation processes for the fabrication of ultrashallow p/sup +/-n junctions is presented, and the resulting junctions are examined in terms of defect annihilation, junction depth, sheet resistance, and diode reverse leakage current.
Journal ArticleDOI
Characterization of ultra-shallow p/sup +/-n junction diodes fabricated by 500-eV boron-ion implantation
TL;DR: In this article, the junction depths following rapid thermal annealing (RTA) for 10 s at either 950 degrees C or 1050 degrees C were determined to be 60 and 80 nm, respectively.
Journal ArticleDOI
Characteristics of sub-100-nm p/sup +//n junctions fabricated by plasma immersion ion implantation
E.C. Jones,Nathan W. Cheung +1 more
TL;DR: In this article, annealing at 1060 degrees C for 10 s is used to create an amorphous Si layer to retard B channeling and diffusion, and then BF/sub 3/ is implanted.
Journal ArticleDOI
Recoil implantation of antimony into silicon
TL;DR: In this paper, the authors compared the transmission sputtering theory of Sigmund with the theoretical analysis of the binding energy near a bulk value (≅20 eV), and showed that the optimum yield is obtained when the layer thickness corresponds to the depth of the maximum energy deposition of krypton in antimony.