Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser
Bryan Ellis,Marie A. Mayer,Marie A. Mayer,Gary Shambat,Tomas Sarmiento,James S. Harris,Eugene E. Haller,Eugene E. Haller,Jelena Vuckovic +8 more
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In this paper, the authors demonstrate continuous-wave lasing from a quantum dot photonic crystal nanocavity at temperatures of up to 150 K. The achieved lasing thresholds of 181 nA and 287 nA are record-low for any type of electrically pumped laser.Abstract:
Researchers demonstrate continuous-wave lasing from a quantum dot photonic crystal nanocavity at temperatures of up to 150 K. The achieved lasing thresholds of 181 nA (at 50 K) and 287 nA (at 150 K) are record-lows for any type of electrically pumped laser.read more
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Interfacing single photons and single quantum dots with photonic nanostructures
TL;DR: An overview of the theoretical principles involved, as well as applications ranging from high-precision quantum electrodynamics experiments to quantum-information processing can be found in this paper.
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Monolayer semiconductor nanocavity lasers with ultralow thresholds
Sanfeng Wu,Sonia Buckley,John Schaibley,Liefeng Feng,Jiaqiang Yan,David Mandrus,Fariba Hatami,Wang Yao,Jelena Vuckovic,Arka Majumdar,Xiaodong Xu +10 more
TL;DR: A new lasing strategy is reported: an atomically thin crystalline semiconductor—that is, a tungsten diselenide monolayer—is non-destructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PCC, allowing an optical pumping threshold as low as 27 nanowatts at 130 kelvin similar to the value achieved in quantum-dot PCC lasers.
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Engineered quantum dot single-photon sources.
TL;DR: The applications of single-photon sources and their various requirements are discussed, before reviewing the progress made on a QD platform in meeting these requirements.
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Attojoule Optoelectronics for Low-Energy Information Processing and Communications: a Tutorial Review
TL;DR: Optics offers unique opportunities for reducing energy in information processing and communications while resolving the problem of interconnect bandwidth density inside machines as discussed by the authors, and the physics of optics and optoelectronics fundamentally address both interconnect energy and bandwidth density.
References
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Journal ArticleDOI
High- Q photonic nanocavity in a two-dimensional photonic crystal
TL;DR: A silicon-based two-dimensional photonic-crystal slab is used to fabricate a nanocavity with Q = 45,000 and V = 7.0 × 10-14 cm3; the value of Q/V is 10–100 times larger than in previous studies, underlying the realization that light should be confined gently in order to be confined strongly.
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Device Requirements for Optical Interconnects to Silicon Chips
TL;DR: The current performance and future demands of interconnects to and on silicon chips are examined and the requirements for optoelectronic and optical devices are project if optics is to solve the major problems of interConnects for future high-performance silicon chips.
Journal ArticleDOI
Electrically Driven Single-Cell Photonic Crystal Laser
Hong Gyu Park,Se-Heon Kim,Soon-Hong Kwon,Young-Gu Ju,Jin-Kyu Yang,Jong Hwa Baek,Sung Bock Kim,Yong-Hee Lee +7 more
TL;DR: The experimental demonstration of an electrically driven, single-mode, low threshold current (∼260 μA) photonic band gap laser operating at room temperature is reported, a small step toward a thresholdless laser or a single photon source.
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Lasing in metallic-coated nanocavities
MT Martin Hill,YS Yok-Siang Oei,Barry Smalbrugge,Youcai Zhu,Tjibbe de Vries,Peter J. van Veldhoven,Frank W. M. van Otten,TJ Tom Eijkemans,Jaros lstrok,aw P. Turkiewicz,Huug de Waardt,EJ Erik Jan Geluk,Soon-Hong Kwon,Yong-Hee Lee,R Richard Nötzel,MK Meint Smit +15 more
TL;DR: In this paper, the first laser operation in an electrically pumped metallic-coated nanocavity formed by a semiconductor heterostructure encapsulated in a thin gold film was reported.
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Ultrafast photonic crystal nanocavity laser
TL;DR: In this paper, a photonic crystal nanocavity laser with response times as short as a few picoseconds resulting from 75-fold spontaneous emission rate enhancement in the cavity was demonstrated.