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Journal ArticleDOI

Use of Auger Electron Spectroscopy and Inert Gas Sputtering for Obtaining Chemical Profiles

P. W. Palmberg
- 01 Jan 1972 - 
- Vol. 9, Iss: 1, pp 160-163
TLDR
In this article, surface chemical analysis by Auger electron spectroscopy (AES) is carried out simultaneously with inert gas sputtering to obtain composition profiles normal to the solid-vacuum interface Chemical profiles are presented for as-evaporated and air-heated nichrome thin film resistors.
Abstract
An apparatus is described in which surface chemical analysis by Auger electron spectroscopy (AES) is carried out simultaneously with inert gas sputtering to obtain composition profiles normal to the solid–vacuum interface Chemical profiles are presented for as-evaporated and air-heated nichrome thin film resistors

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Journal ArticleDOI

Sputter depth profile analysis of interfaces

TL;DR: In this paper, a brief survey of the technique of sputter depth profiling is given, along with some introductory remarks about aims and scope, historical background and present state of the art, and a summary of optimized experimental conditions for high-resolution depth profiles highlights the use of sample rotation and of low energy primary ions.
Journal ArticleDOI

Auger study of preferred sputtering on binary alloy surfaces

TL;DR: In this paper, a kinetic model has been formulated to describe the time variation of the surface composition during sputtering, and the individual sputter yields for Cu and Ni atoms in the alloy and the depth of the altered layer where the composition is altered by sputtering were determined.
Journal ArticleDOI

Aluminum—Silicon Schottky barriers and ohmic contacts in integrated circuits

TL;DR: In this paper, two mechanisms have been found to be responsible for the changes in barrier height: 1) the removal of positive charges from the oxide, and 2) metallurgical reactions between the Al and Si.
Journal ArticleDOI

Auger Spectroscopic Analysis of Bioglass Corrosion Films

TL;DR: In this article, the authors used Auger spectroscopy and ion beam milling to determine surface compositional profiles on a series of bioglass implant materials after exposure to simulated body conditions.
Journal ArticleDOI

Metallurgical and electrical properties of alloyed Ni/AuGe films on n-type GaAs

TL;DR: In this paper, an experimental study of the alloying characteristics of a composite thin-film structure which is often used as an ohmic contact to GaAs is presented, and the specific contact resistance of the Ni/AuGe/GaAs system is measured for a wide range of alloy temperatures and times.