Journal ArticleDOI
Very Thin Silicon Nitride Films Grown by Direct Thermal Reaction with Nitrogen
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TLDR
Very thin uniform silicon nitride films less than 100A have been obtained on silicon wafers by direct thermal reaction with nitrogen at temperatures ranging from 1200° to 1300°C.Abstract:
Very thin uniform silicon nitride films less than 100A have been obtained on silicon wafers by direct thermal reaction with nitrogen at temperatures ranging from 1200° to 1300°C. Small amounts of water or oxygen in reaction mixture caused vapor etching which gave rise to local crystallization. By eliminating both from the reaction ambient to less than 1 ppm, amorphous silicon nitride films can be deposited. These films have been found to have properties similar to those of CVD by investigations of Auger electron spectroscopy, infrared spectroscopy, and ellipsometry. Remarkable masking effects of the films against oxidation and phosphorus diffusion have been found.read more
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Thermal nitridation of Si and SiO 2 for VLSI
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Atomic transport during growth of ultrathin dielectrics on silicon
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TL;DR: In this article, changes in the stress level due to rapid thermal annealing of polycrystalline silicon thin films were studied as a function of the time and temperature, and the corresponding variations in the microstructure and surface layer were experimentally investigated by a variety of analytical tools.
Book ChapterDOI
Intrinsic Point Defects
TL;DR: In this paper, the intrinsic point defects play important roles in nearly all theories of impurity diffusion in silicon, and the properties of intrinsic point defect are reviewed in the following sections.
Journal ArticleDOI
Characterization of low‐pressure chemical‐vapor‐deposited and thermally‐grown silicon nitride films
TL;DR: In this article, low pressure chemical vapordeposited (LPCVD) silicon nitride films on silicon have been characterized by means of Rutherford backscattering (RBS), Auger electron spectroscopy (AES) combined with ion sputtering, and spectroscopic ellipsometry.