Journal ArticleDOI
Visible light emission at room temperature from partially oxidized amorphous silicon
E. Bustarret,M. Ligeon,L. Ortega +2 more
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In situ boron-doped amorphous hydrogenated silicon films have been anodized in hydrofluoric acid solutions and subsequently electrochemically oxidized in an aqueous electrolyte as mentioned in this paper.About:
This article is published in Solid State Communications.The article was published on 1992-08-01. It has received 57 citations till now. The article focuses on the topics: Nanocrystalline silicon & Amorphous silicon.read more
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X-ray diffraction studies of porous silicon
D. Bellet,G. Dolino +1 more
TL;DR: In this article, the authors review previous X-ray diffraction experiments on porous silicon, giving a determination of porous layer strain, in particular the size and shape of silicon crystallites.
Journal ArticleDOI
Characterization of porous silicon inhomogeneities by high spatial resolution infrared spectroscopy
TL;DR: In this article, a detailed analysis of infrared absorption spectra of porous silicon is performed on the basis of high spatial resolution measurements, where Si atoms of the porous silicon surface are found to bind to H, O, C atoms and to CH3 and OH groups.
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Influence of humidity on transport in porous silicon
TL;DR: In this article, the influence of relative humidity on the electrical conductance of porous silicon (PS) was measured at room temperature and atmospheric pressure in the range of 0% to 100%.
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Spin‐dependent effects in porous silicon
TL;DR: In this paper, the Pb center, the silicon dangling bond at the crystalline Si/SiO2 interface, is found to be the dominant paramagnetic defect, influencing both photoconductivity and photoluminescence.
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Photoluminescence excitation spectroscopy of porous silicon and siloxene.
TL;DR: A close agreement is found between the properties of porous silicon and annealed siloxene, both in photoluminescence and in luminescence excitation.
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Journal ArticleDOI
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
TL;DR: In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
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Porous silicon formation: A quantum wire effect
Volker Lehmann,Ulrich Gösele +1 more
TL;DR: In this article, it was shown that a two-dimensional quantum confinement (quantum wire) in the very narrow walls between the pores not only explains the change in band gap energy but also may also explain the dissolution mechanism that leads to porous silicon formation.
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Quantum size effects on photoluminescence in ultrafine Si particles
TL;DR: In this paper, it was shown that Si microcrystallites were embedded in a Si oxide matrix for the sample which emitted the light, and the inverse relation between emission energy and the square of the crystallite size indicates that carrier confinement in the Si micro-crystallite causes this photoluminescence phenomenon.
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The origin of visible luminescencefrom “porous silicon”: A new interpretation
TL;DR: In this paper, the authors compared the luminescence and vibrational properties of anodically oxidized (porous) silicon and of chemically synthesized siloxene (Si 6 O 3 H 6 ) and its derivates.
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Visible electroluminescence from porous silicon
Nobuyoshi Koshida,Hideki Koyama +1 more
TL;DR: In this paper, photoluminescent porous Si (PS) layers exhibit visible electroluminescence (EL) when the forward current density reaches a certain value, stable visible (orange) light is uniformly emitted through a semitransparent electrode.