Journal ArticleDOI
Characterization of porous silicon inhomogeneities by high spatial resolution infrared spectroscopy
TLDR
In this article, a detailed analysis of infrared absorption spectra of porous silicon is performed on the basis of high spatial resolution measurements, where Si atoms of the porous silicon surface are found to bind to H, O, C atoms and to CH3 and OH groups.About:
This article is published in Solid State Communications.The article was published on 1993-07-01. It has received 78 citations till now. The article focuses on the topics: Porous silicon & Silicon.read more
Citations
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Journal ArticleDOI
The structural and luminescence properties of porous silicon
TL;DR: A large amount of work world wide has been directed towards obtaining an understanding of the fundamental characteristics of porous Si as mentioned in this paper, and the key importance of crystalline Si nanostructures in determining the behaviour of porous si is highlighted.
Journal ArticleDOI
Porous silicon: a quantum sponge structure for silicon based optoelectronics
TL;DR: The photoluminescence properties of porous silicon have attracted considerable research interest since their discovery in 1990 as discussed by the authors, which is due to excitonic recombination quantum confined in Si nanocrystals which remain after the partial electrochemical dissolution of silicon.
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Small-sized silicon nanoparticles: new nanolights and nanocatalysts
TL;DR: This review focuses on the synthesis and PL properties of small-sized Si nanoparticles and their potential applications in the fields of bioimaging and nanocatalysis and highlights major challenges and promises.
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Characterization of silicon nanoparticles prepared from porous silicon
TL;DR: The photoluminescence (PL) spectrum shows two peaks: a red peak at around 680 nm and a blue peak between 415 and 446 nm, which is not typical for as-prepared porous silicon (PS).
References
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Journal ArticleDOI
Porous silicon formation: A quantum wire effect
Volker Lehmann,Ulrich Gösele +1 more
TL;DR: In this article, it was shown that a two-dimensional quantum confinement (quantum wire) in the very narrow walls between the pores not only explains the change in band gap energy but also may also explain the dissolution mechanism that leads to porous silicon formation.
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Structural interpretation of the vibrational spectra of a-Si: H alloys
TL;DR: In this article, the ir and Raman spectra of Si: H alloys produced by plasma decomposition of Si${\mathrm{H}}_{4}$ are studied for a wide range of deposition conditions.
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Chemical effects on the frequencies of Si-H vibrations in amorphous solids
TL;DR: In this article, it was shown that the frequencies of the bond-stretching vibrations of Si-H groups in amorphous solids vary systematically with the electronegativities of the next nearest neighbor atoms of the network.
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Comparison of properties of dielectric films deposited by various methods
TL;DR: In this paper, the physico-chemical properties of various dielectric films used on semiconductor devices are compared according to their method of formation or deposition, including thermal oxidation, CVD and pyrolytic deposition.
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Effects of the nearest neighbors and the alloy matrix on SiH stretching vibrations in the amorphous SiO r :H (0<r<2) alloy system
TL;DR: This paper has modeled the shape of the SiH bond-stretching band as a function of the alloy composition, and finds that the frequency shifts caused by changes in the matrix are comparable to the shifts associated with the different local environments.