Journal ArticleDOI
Voltage-dependent scanning tunneling microscopy imaging of semiconductor surfaces
TLDR
In this paper, a voltage-dependent scanning tunneling microscopy (STM) data from various semiconductor surfaces is presented, and different techniques for acquiring the data are demonstrated, and the interpretation of spectroscopic data is discussed.Abstract:
We present voltage-dependent scanning tunneling microscopy (STM) data from various semiconductor surfaces. Different techniques for acquiring the data are demonstrated, and the interpretation of spectroscopic data is discussed. For the Si(111)2 × 1, GaAs (110), and O/ GaAs(110) surfaces, we find that the voltage dependence of constant-current contours provides the most direct method for understanding the electronic and geometric structure of the surface. For the case of oxygen on n-type GaAs, we observe a reversal in the constant-current contours when the polarity of the bias voltage is reversed, which is interpreted in terms of band bending due to a negatively charged adsorbate. Theoretical calculations for a screened Coulomb potential are shown to agree with the observed reversal in the STM contours of the adsorbed oxygen.read more
Citations
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Scanning tunneling microscopy and atomic force microscopy: application to biology and technology
TL;DR: The scanning tunneling microscope (STM) and the atomic force microscope (AFM) are scanning probe microscopes capable of resolving surface detail down to the atomic level illustrated by atomic resolution images including graphite, an organic conductor, an insulating layered compound, and individual adsorbed oxygen atoms on a semiconductor.
Journal ArticleDOI
Scanning tunnelling microscopy
TL;DR: The scanning tunnelling microscopy (STM) is a very versatile instrument that can operate in ultra high vacuum, in air, in reactive gases, in corrosive solutions or at cryogenic temperatures as discussed by the authors.
Journal ArticleDOI
Scanning tunneling microscopy of semiconductor surfaces
Joel A. Kubby,John J. Boland +1 more
TL;DR: In this article, a comprehensive review of the structures of the clean, low-index surfaces of elemental and compound semiconductors is presented using the general physical principles that determine them.
Journal ArticleDOI
Scanning tunneling spectroscopy
TL;DR: In this paper, the development of the field of spectroscopic measurement with the scanning tunneling microscope (STM) is discussed, with emphasis on the techniques for data acquisition and interpretation.
Journal ArticleDOI
Conductance of a single flexible molecular wire composed of alternating donor and acceptor units.
Christophe Nacci,Christophe Nacci,Francisco Ample,David Bléger,Stefan Hecht,Christian Joachim,Christian Joachim,Leonhard Grill,Leonhard Grill +8 more
TL;DR: This work shows that a conjugated polymer composed of alternating donor and acceptor repeat units, synthesized directly by an on-surface polymerization, exhibits a very high conductance while maintaining both its flexible structure and a finite band gap.
References
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Journal ArticleDOI
Surface studies by scanning tunneling microscopy
TL;DR: In this paper, surface microscopy using vacuum tunneling has been demonstrated for the first time, and topographic pictures of surfaces on an atomic scale have been obtained for CaIrSn 4 and Au.
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Theory of the scanning tunneling microscope
Jerry Tersoff,D. R. Hamann +1 more
TL;DR: In this paper, a metal tip is scanned along the surface while ad justing its height to maintain constant vacuum tunneling current, and a contour map of the surface is generated.
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Theory and Application for the Scanning Tunneling Microscope
Jerry Tersoff,D. R. Hamann +1 more
TL;DR: In this article, a theory for vacuum tunneling between a real solid surface and a model probe with a locally spherical tip is presented, applicable to the recently developed "scanning tunneling microscope."
Journal ArticleDOI
7 × 7 Reconstruction on Si(111) Resolved in Real Space
TL;DR: In this paper, a modified adatom model with 12 adatoms per unit cell and an inhomogeneously relaxed underlying top layer was used for Si(111) reconstruction.