Journal ArticleDOI
X-ray production ˜ 13 nm from laser-produced plasmas for projection x-ray lithography applications.
TLDR
Intensity scaling suggests that laser spot size and two-dimensional expansion are important for optimizing x-ray production at these low-irradiation intensities.Abstract:
X-ray production in the region ~ 13 nm from laser-produced plasmas has been investigated as a source for projection x-ray lithography. The dependence of x-ray conversion efficiency on target material, intensity, and pulse length has been studied by using a 0.53-μm laser with a maximum of 0.3 J. A conversion efficiency of 1% into a 0.3-nm bandwidth has been demonstrated for Sn targets at intensities of ~ 1011 W/cm2 by using a 7.5-ns pulse. Intensity scaling suggests that laser spot size and two-dimensional expansion are important for optimizing x-ray production at these low-irradiation intensities.read more
Citations
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Journal ArticleDOI
Intense xenon capillary discharge extreme-ultraviolet source in the 10–16-nm-wavelength region
TL;DR: Intense extreme-ultraviolet emission is observed, within the 10-16-nm-wavelength range, emitted by a xenon capillary discharge plasma, which could be suitable for extreme-ULTraviolet imaging applications, such as extreme-Ultraviolet lithography.
Journal ArticleDOI
Tunable narrowband soft x-ray source for projection lithography
Gerard O'Sullivan,Ronan Faulkner +1 more
TL;DR: In this article, laser plasmas produced on low Z target material such as plastics and araldites that contain 1 to 10% concentrations of the elements 50 ≤ Z ≤ 70 emit narrow regions of intense quasicontinua in the 6 to 13-nm wavelength range.
Journal ArticleDOI
13.5 nm extreme ultraviolet emission from tin based laser produced plasma sources
TL;DR: In this paper, an examination of the influence of target composition and viewing angle on the extreme ultraviolet spectra of laser produced plasmas formed from tin and tin doped planar targets is reported.
Patent
Critical illumination condenser for x-ray lithography
Simon J. Cohen,Lynn G. Seppala +1 more
TL;DR: In this paper, a critical illumination condenser system for extreme ultraviolet (EUV) projection lithography based on a ring field imaging system and a laser produced plasma source is presented.
Journal ArticleDOI
New laser plasma source for extreme-ultraviolet lithography.
Feng Jin,Martin Richardson +1 more
TL;DR: An investigation of a new candidate laser plasma source for EUV lithography that is based on line emission from ice-water targets that has the potential to meet all the strict requirements of EUV conversion, debris elimination, operation, and cost for a demonstration lithographic system is reported.
References
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Journal ArticleDOI
X-ray plasma source design simulations
TL;DR: Computer simulations of the experiments delineate the critical phenomena underlying high conversion efficiencies, especially the role of hydrodynamic expansion and radiative emission, and the transition from one-dimensional to two-dimensional flow.