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X-ray zone plate fabrication using a focused ion beam

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TLDR
In this paper, an x-ray phase zone plate was fabricated using the focused ion beam (FIB) milling technique using the Micrion 9500HT FIB station, which has a 50 kV Ga{sup +} column.
Abstract
An x-ray zone plate was fabricated using the novel approach of focused ion beam (FIB) milling. The FIB technique was developed in recent years, it has been successfully used for transmission electron microscopy (TEM) sample preparation, lithographic mask repair, and failure analysis of semiconductor devices. During FIB milling, material is removed by the physical sputtering action of ion bombardment. The sputter yield is high enough to remove a substantial amount of material, therefore FIB can perform a direct patterning with submicron accuracy. The authors succeeded in fabricating an x-ray phase zone plate using the Micrion 9500HT FIB station, which has a 50 kV Ga{sup +} column. Circular Fresnel zones were milled in a 1.0-{micro}m-thick TaSiN film deposited on a silicon wafer. The outermost zone width of the zone plate is 170 nm at a radius of 60 {micro}m. An achieved aspect ratio was 6:1.

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Journal ArticleDOI

Direct-Write Ion Beam Lithography

TL;DR: A comprehensive review of ion beam lithography in general and a practical guide to the individual IBL techniques developed to date is provided in this article, where special attention is given to applications in nanofabrication.
Journal ArticleDOI

Rapid prototyping of Fresnel zone plates via direct Ga(+) ion beam lithography for high-resolution X-ray imaging.

TL;DR: This work demonstrates an alternative method that allows the direct, simple, and fast fabrication of FZPs using focused Ga(+) beam lithography practically, in a single step and is expected to increase the accessibility of high-resolution optics to a wider community of researchers working on soft X-ray and extreme ultraviolet microscopy using synchrotron radiation and advanced laboratory sources.
Journal ArticleDOI

Ion beam lithography for Fresnel zone plates in X-ray microscopy.

TL;DR: It is shown that ion beam lithography (IBL) may advantageously simplify Fresnel Zone Plates preparation and measured efficiencies in the 1st and 2nd order of diffraction reach the theoretical predictions.
Journal ArticleDOI

Ion beam lithography for direct patterning of high accuracy large area X-ray elements in gold on membranes

TL;DR: In this article, a zone plate of 100mm diameter and 100nm outermost zone width has been produced in a 500nm thick gold layer on a Si"3N"4 membrane.
ReportDOI

XFD progress report.

E. Gluskin
Abstract: In May 2002, the Advanced Photon Source (APS) was reorganized into three divisions: the Accelerator Systems Division (ASD), the APS Operations Division (AOD), and the Experimental Facilities Division (XFD). Parts of the former User Program Division (UPD) were incorporated into XFD; other parts were incorporated into AOD. This Progress Report summarizes the main scientific and technical activities of XFD and parts of the former UPD from January 2001 through June 2002. The report is divided into two major sections, (1) SRI-CAT Beamlines, Technical Developments, and Scientific Applications, and (2) User Technical Support, which describe the technical activities and research and development (R&D) accomplishments of the XFD and former UPD personnel in supporting the synchrotron radiation instrumentation (SRI) collaborative access team (CAT) and the general APS user community. Also included in this report is a comprehensive list of publications by XFD and UPD staff members during the time period covered by this report.
References
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High‐resolution focused ion beams

TL;DR: In this article, it was demonstrated that sub-micrometer focused ion beams can be produced with current densities greater than 1 A ǫ cm−2 using a liquid-metal ion source.
Journal ArticleDOI

Fundamental limits to imaging resolution for focused ion beams

TL;DR: In this paper, the authors investigated the limitations on the formation of focused ion beam images from secondary electrons and found that for small features, sputtering is the limit to imaging resolution, and for extended small features (e.g., layered structures), rearrangement, redeposition, and differential sputtering rates may limit the resolution in some cases.
Journal ArticleDOI

Focused ion beam milling: Depth control for three-dimensional microfabrication

TL;DR: In this paper, the authors present a method for controlling the ion milling to produce cavities with predefined, arbitrary geometric cross-sections by programming variations as a function of position into the algorithm that generates the dwell times in the pixel address scheme of a focused ion beam.
Journal ArticleDOI

Depth control of focused ion-beam milling from a numerical model of the sputter process

TL;DR: In this article, a mathematical model of focused ion-beam milling is used to generate dwell times for the vector scanned pixel address scheme of a focused ionbeam deflection system, incorporating the absolute sputter yield of the solid as a function of the angle of incidence, and the relationship between the ionbeam current distribution and the pixel size of the deflection pattern.
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