Journal ArticleDOI
ZrN diffusion barrier in aluminum metallization schemes
TLDR
In this paper, reactively sputtered ZrN, the most thermally stable of the refractory metal nitrides, for its diffusion barrier properties in aluminum metallization schemes with Rutherford backscattering spectroscopy and transmission electron microscopy (TEM).About:
This article is published in Thin Solid Films.The article was published on 1983-06-17. It has received 74 citations till now. The article focuses on the topics: Diffusion barrier & Grain boundary.read more
Citations
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Progress in the developments of (Ba,Sr)TiO3 (BST) thin films for Gigabit era DRAMs
TL;DR: In this paper, the recent developments of (Ba,Sr)TiO 3 (BST) thin films for future Gbit era dynamic random access memory (DRAM) applications are reviewed.
Journal ArticleDOI
Characterization of reactively sputtered ruthenium dioxide for very large scale integrated metallization
TL;DR: In this article, reactively sputtered films of RuO2 for possible application in very large scale integrated circuits were investigated and the resistivity of as deposited films is 40 μΩ cm.
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Preparation and properties of tantalum pentoxide (Ta2O5) thin films for ultra large scale integrated circuits (ULSIs) application - a review
TL;DR: A broad review of the current status and future trends of Ta2O5 thin films as a highly promising storage dielectric material for high-density dynamic random access memory applications is provided in this paper.
Journal ArticleDOI
Ion beam bombardment effects during films deposition
S.M. Rossnagel,JJ Cuomo +1 more
TL;DR: In this paper, the effects of low energy ion beam bombardment during the deposition of a thin film by either sputtering or evaporation are examined, and models have been presented which examine such features as the change in density and void structure, or the changes in stress and resistivity.
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A comparative study of the diffusion barrier properties of TiN and ZrN
TL;DR: In this paper, the usefulness of Ti/TiN and Zr/ZrN bilayers as low resistivity contacts and diffusion barriers between doped silicon and aluminium was examined.
References
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Journal ArticleDOI
Diffusion barriers in thin films
TL;DR: In this article, the concept of sacrificial barrier is introduced, which is based on an irreversible loss of barrier material by interfacial reactions with the adjoining metals, and successful applications are presented.
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TiN formed by evaporation as a diffusion barrier between Al and Si
TL;DR: The formation of TiN thin films by doping Ti with N2 during evaporation at room temperature and by following with high-temperature (700-900°C) annealing was confirmed by x-ray analysis as mentioned in this paper.
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TiN and TaN as diffusion barriers in metallizations to silicon semiconductor devices
TL;DR: In this paper, the role of diffusion barriers in the contact metallurgy of silicon semiconductor devices is to prevent silicon diffusion into the top layer of the metallization process.
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High-temperature contact structures for silicon semiconductor devices
TL;DR: In this paper, it was shown that stable high-temperature contacts on silicon semiconductor devices can be produced by using intermetallic compounds of aluminum in combination with TiN and TaN as barrier materials instead of pure aluminum.
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Interfacial reactions between aluminum and transition‐metal nitride and carbide films
TL;DR: In this paper, the failure mechanism of transition metal nitride and carbide barrier materials in Al overlayer metallizations was investigated, and the authors developed high-temperature contact structures for silicon semiconductor devices by using an intermetallic compound of Al instead of plain Al for the top layer.