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DC ready devices that work on both - ac and dc - would simplify a smooth introduction of dc there, where it has its biggest advantage.
The different origins of transistor action lead to distinct size dependences of the power dissipation in these transistors and permit sufficiently small spin-based transistors to surpass the performance of charge-based transistors at room temperature or above.
The results demonstrate that CMOS transistors have lower noise and much improved dc characteristics at LAr temperature.
Therefore, the device studied shows better dc and ac performances than a conventional device.
The transistors are analogous to the well-established bipolar junction transistors and yet different because they are based on different physical principles.
In addition, due to the absence of PNP or PMOS transistors for handling ac signals, its performance in terms of maximum frequency of operation is improved.
The comparison results demonstrate that the new model gives accurate descriptions for both dc and ac characteristics of LDMOS transistors.
Furthermore, the dc and ac conduction mechanisms were studied, indicating that the conduction mechanism is closely related to temperature for dc and ac conduction behaviour.
Consequently, some specific parameters to transistors are improved and permanently compared to some fabricated vacuum nano-transistors that are proposed in literature.

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