What is the difference between a transistor and a FET?
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| Similarly to the operation of a conventional double-gate silicon FET, the top-gate bias modulates the threshold voltage of the bottom-gate transistor and significantly improves the transistor sub-threshold swing and leakage current. | |
| However, a careful investigation both at the transistor and circuit level, reveals that the BC FET is better than the SCI FET for moderate speed, ultra low-power applications. | |
86 Citations | The authors introduce a source-gated transistor that overcomes some of the fundamental limitations of the field-effect transistor. |
689 Citations | A functional MOS transistor is proposed which works more intelligently than a mere switching device. |
| The output and transfer characteristics of the fabricated FET show a behavior that is consistent with the minimum channel width of the device. | |
| Analysis and simulation demonstrates that the FET gate voltage to drain current transfer characteristic has a significant detrimental effect on these characteristics, indicating it is the major factor in the difference between ideal and practical results. | |
26 Citations | A novel one‐dimensional electron gas field‐effect transistor (FET) is proposed with the advantages of higher electron mobility and higher carrier concentration than conventional two‐dimensional electron gas FET. |
13 Nov 2009 | It can be concluded that multi-Si nanowire FET reveals much larger on-current than that of conventional planar FET. |
| Compared with the field-effect transistor, a source-gated transistor more nearly meets these requirements. | |
32 Citations | We propose a novel ferroelectric-gate field-effect transistor (FET) with a polar semiconductor channel, which is called a controlled-polarization-type ferroelectric-gate FET. |
431 Citations | In principle, a memory field-effect transistor (FET) based on the metal-ferroelectric-semiconductor gate stack could be the building block of an ideal memory technology that offers random access, high speed, low power, high density and nonvolatility. |
| The narrower gate width device provides the best performance for the n-type field-effect transistor (n-FET) with the same gate length. | |
| The observed technical performance parameters (drain and transfer characteristics) have similarity with technical conventional characteristics (parameter-wise) of semiconductor FET device, the transistor. | |
92 Citations | These results demonstrate that the vertical FET operates as a static induction transistor and the short length between the source, drain and gate electrodes in the device structure improves the device characteristics. |
44 Citations | The FET exhibited high performances with one of the highest hole mobilities (0.68 cm2 V(-1) s(-1)) for thin-film transistors and a high on/off ratio, implying a promising material in the FET family. |
28 Citations | Therefore, the HEMT is a more suitable transducer platform than the conventional silicon-based transistor. |
| Electrical measurements show that the device has characteristics of a typical FET device. |
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