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The proposed structures reduce the number of the transistors considerably and have very high driving capability.
We propose new side-gate transistors.
It is found that single electron devices can have an operating temperature range similar to conventional silicon transistors, opening the door to hybrid designs.
The enhanced response for the ultrathin transistors provides insight into the device physics.
The measurements also demonstrate the possibility of realizing ambipolar transistors using InSb nanowires.

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