Showing papers on "Chemical vapor deposition published in 1982"
TL;DR: In this article, the structure of microcrystalline diamond deposits was identified by electron diffraction and Raman scattering, and cubo-octahedral or multiply-twinned crystals were obtained.
Abstract: Microcrystalline diamond has been formed on silicon or molybdenum substrates by vapor deposition from a geseous mixture of methane and hydrogen. Cubo-octahedral or multiply-twinned crystals were obtained. The structure of the deposits was identified by electron diffraction and Raman scattering.
675 citations
TL;DR: In this article, a mixture of hydrocarbon and hydrogen gases was passed through a heated reaction chamber in which a hot tungsten filament was held near the substrates, and the deposit was identified by reflection electron diffraction and Raman spectroscopy.
Abstract: Microcrystals of diamond were grown on non-diamond substrates including silicon, molybdenum and silica, as well as on diamond by chemical vapour deposition. Deposition was carried out by passing a mixture of hydrocarbon and hydrogen gases through a heated reaction chamber in which a hot tungsten filament was held near the substrates. The deposit was identified by reflection electron diffraction and Raman spectroscopy. The effects of experimental conditions on the growth features were studied.
618 citations
TL;DR: In this article, the optical and electrical properties of these layers are very similar: for thicknesses in the range of a few hundred nanometers, a resistivity ϱ of the order of 4 × 10−4 Ω cm and a transparency T of 80%-90% in the visible range of the spectrum are obtained.
243 citations
187 citations
TL;DR: In this article, a planar magnetron system with controlled Ar/O2 gas mixtures was used for sputtering a Zn target in an unheated glass substrate, which was either stationary in front of the target or in constant motion.
Abstract: ZnO films have been prepared by rf sputtering a Zn target in a planar magnetron system with controlled Ar/O2 gas mixtures. The films were deposited on unheated glass substrates which were either stationary in front of the target or in constant motion. Both the system pressure and plasma impedance changed when an oxide layer formed on the target surface. This occurred at an oxygen flow rate which increased almost linearly with rf power; at 500 W, the required flow rate was 9 ml/min and the pressure increased from 0.1 to 1.2 Pa due to the reduced oxygen gettering. High resistance ZnO films were deposited at oxygen flow rates above this threshold value. The target self‐bias voltage increased by 30 V at this value; it is affected by both the system pressure and the power. The deposition rate increased linearly with power at approximately 0.03 (μm/min)/(W/cm2) which appears to be typical of sputtering from a ZnO layer or target. For continuous substrate motion, the average rate was approximately 7% of this val...
184 citations
TL;DR: In this paper, preparation of silicon nitride film with small tensile stress and low refractive index was investigated as a function of deposition temperature and reactant gas ratio (SiH2Cl2/NH3).
Abstract: In LP‐CVD process, preparation of silicon nitride film with small tensile stress and low refractive index was investigated as a function of deposition temperature and reactant gas ratio (SiH2Cl2/NH3). The small stress film with low refractive index can be prepared easily by high temperature deposition. Applying the film to an x‐ray mask membrane, a new silicon nitride single‐layer x‐ray mask with a large area window (such as 50 mm in diameter) and high transparency to visible light is realized. Using this mask, a submicron resist pattern (0.5 μm line and space) can be replicated easily by Si–K x‐ray exposure system.
182 citations
TL;DR: In this paper, it was shown that thin film single crystal layers of ZnS, ZnSe and ZnSE x Se 1-x can be grown on a variety of substrates by direct reaction at atmospheric pressure, of dimethyl zinc, hydrogen sulphide and/or hydrogen selenide, using hydrogen as the carrier gas.
151 citations
Patent•
17 Nov 1982TL;DR: In this paper, a method for synthesizing diamond was proposed, where hydrogen gas which has passed through a micro-wave non-electrode discharge and mixed with hydrocarbon gas, or a mixture gas consisting of hydrocarbon and hydrogen after its passing through a non-electric discharge, is introduced onto the surface of a substrate heated to a temperature of from 300° to 1300° C. to decompose hydrocarbon in its energetically activated state for the diamond deposition.
Abstract: A method for synthesizing diamond wherein hydrogen gas which has passed through a micro-wave non-electrode discharge and mixed with hydrocarbon gas, or a mixture gas consisting of hydrocarbon and hydrogen after its passing through a micro-wave non-electrode discharge, is introduced onto the surface of a substrate heated to a temperature of from 300° to 1300° C. to decompose hydrocarbon in its energetically activated state for the diamond deposition.
144 citations
TL;DR: In this article, the merits of the OM-CVD process and compares the results obtained so far with those on ZnSe crystals or epitaxial layers prepared by other methods are discussed.
134 citations
TL;DR: In this article, the effects of low-energy particle bombardment on growing films during vapor phase epitaxy are considered in some detail, and the results on the growth of unique single-crystal metastable semiconducting alloys are discussed.
Abstract: The effects of low‐energy particle bombardment of growing films during vapor phase epitaxy are considered in some detail. Ion bombardment plays an important and sometimes dominant role in controlling the growth kinetics and physical properties of films deposited by glow discharge and ion beam sputter deposition, molecular beam epitaxy using accelerated dopants, and plasma‐ assisted chemical vapor deposition. Ion–surface interaction effects, including trapping, sputtering, preferential sputtering, and collisional mixing, are used to interpret and model experimental results concerning the effects of low‐energy particle bombardment on nucleation, film growth, enhanced diffusion at interfaces, and elemental incorporation probabilities. Finally, recent results on the growth of unique single‐crystal metastable semiconducting alloys are discussed.
133 citations
TL;DR: In this paper, the hydrogen contents and etch rates have been measured for plasma-deposited silicon nitrides made in nine different commercially available reactors as well as for some low pressure chemical vapor deposited Nitrides.
Abstract: The hydrogen contents and etch rates have been measured for plasma‐deposited silicon nitrides made in nine different commercially available reactors as well as for some low pressure chemical vapor deposited nitrides. The hydrogen contents vary from 4% to 39% (atomic). A correlation is observed between etch rate and hydrogen content, with etch rates varying over three orders of magnitude.
TL;DR: In this article, an ArF (193 nm) laser was used to excite and dissociate gas phase SiH4 and N2O molecules in contrast to earlier work with incoherent mercury lamps and achieved 20 times the deposition rate, limited the dissociation volume to a localized region, and minimized the direct impingement of UV photons on the substrate.
Abstract: We have demonstrated rapid (3000 A/min) photochemical deposition of silicon dioxide from gas phase donor molecules An ArF (193 nm) laser was used to excite and dissociate gas phase SiH4 and N2O molecules in contrast to earlier work with incoherent mercury lamps We have achieved 20 times the deposition rate, limited the dissociation volume to a localized region, and minimized the direct impingement of UV photons on the substrate Although the SiO2 deposition rate was insensitive to substrate temperature from 20 to 600 °C, film quality noticeably improved above 200 °C Metal‐oxide‐semiconductor capacitors were fabricated and characterized in order to measure SiO2 electrical properties Film composition was investigated using Auger and infrared spectroscopy techniques and showed that the SiO2 is stoichiometric and contains less than 5% nitrogen
TL;DR: In this paper, MOS capacitors were formed on silicon substrates and their electrical properties were evaluated by capacitance-voltage (C‐V) measurements, which indicated a midgap density of surface states NSS = 2×1011 cm−2eV−1 for SiO2 layers deposited at 300°C.
Abstract: Silicon dioxide layers were formed by reacting silane with oxygen. The oxygen was ionized in an rf discharge chamber physically removed from the deposition zone. The excited oxygen species, which left the ionization chamber, reacted with silane regardless of the temperature, during deposition, to be chosen as an important parameter and at the same time avoided the adverse effects of placing the sample within an rf discharge. MOS capacitors were formed on silicon substrates and their electrical properties were evaluated by capacitance‐voltage (C‐V) measurements. An analysis of the quasistatic C‐V data indicates a midgap density of surface states NSS = 2×1011 cm−2eV−1 for SiO2 layers deposited at 300 °C.
TL;DR: In this article, the stresses of thermally grown and chemically vapor deposited (CVD) silicon dioxide were measured by the cantilever beam technique using x-ray diffraction, and it was concluded that their average linear thermal expansion coefficient in the temperature range of −170-115 C is 4×10−6 °C−1, while their biaxial elastic modulus is only 4.6-5.1×1011 dyn/cm2.
Abstract: The stresses of thermally grown as well as chemically vapor deposited (CVD) silicon dioxide were measured by the cantilever beam technique using x‐ray diffraction. Thermally grown oxide shows reversible stress changes upon heating or cooling of the films. The linear thermal expansion of such films is similar to that of bulk vitreous silica, 5×10−7 °C−1, the biaxial elastic modulus was found to be 6.3×1011 dyn/cm2. CVD oxides show extensive hysteresis in the stress‐temperature curves when tested in ambient air. From stress measurements of such films, deposited on Si and GaAs, it was concluded that their average linear thermal expansion coefficient in the temperature range of −170–115 °C is 4×10−6 °C−1, much higher than that of thermally grown oxide, while their biaxial elastic modulus is only 4.6–5.1×1011 dyn/cm2. The stress in such films was found to increase when the films were exposed to a dry ambient or vacuum. The time constant for this change was found to be several minutes at room temperature.
TL;DR: For the first time polycrystalline silicon has been grown by using the visible light of an Ar+ laser for pyrolytical decomposition of SiH4 as discussed by the authors.
Abstract: For the first time polycrystalline silicon has been grown by using the visible light of an Ar+ laser for pyrolytical decomposition of SiH4. With a laser irradiance of 3600 W/mm2 a deposition rate of 30 μm/s was obtained. The temperature dependence of the deposition rate was investigated. The kinetically controlled regime is characterized by an activation energy of 44±4 kcal/mole.
TL;DR: In this paper, the authors present a model of growth and of impurity incorporation that was initially developed for silicon growth but has since been applied, with some success, to the growth of compound semiconductors by OM-VPE.
Abstract: In this chapter we review some of the major practical situations in which low pressure is used during the growth of semiconducting materials by chemical vapor deposition. Growth at subatmospheric pressure offers significant advantages for silicon grown from silane, and for the 111- V compounds InP, GaAs, GalnAs, and GalnAsP grown from organometallic sources by vapor phase epitaxy (OM-VPE). To understand the effect of pressure on growth it is necessary to have at least a qualitative knowledge of the physical and chemical processes involved in chemical vapor deposition (CVD). We therefore present a model of growth and of impurity incorporation that was initially developed for silicon growth but has since been applied, with some success, to the growth of compound semiconductors by OM- VPE. For each semiconduc tor we consider the practical growth system and then describe the material characteristics and applications in state-of-the-art devices.
TL;DR: In this paper, polycrystalline Si and Ge films have been grown on amorphous SiO2 substrates (average Tsubstrate <120°C) by the photodissociation of SiH 4/N2 or GeH4/He mixtures, respectively, using pulsed ArF (193 nm) and KrF (248 nm) excimer lasers.
Abstract: Polycrystalline Si and Ge films have been grown on amorphous SiO2 substrates (average Tsubstrate <120 °C) by the photodissociation of SiH4/N2 or GeH4/He mixtures, respectively, using pulsed ArF (193 nm) and KrF (248 nm) excimer lasers. For both Si and Ge, the film growth rate exhibited a strong dependence on laser wavelength and beam intensity I, where 1≲I⩽20 MW cm−2. As‐deposited films exhibited average grain sizes of up to 0.5 μm and the grains were equiaxed with a random orientation. Ge films doped with ∼1020 cm−3 Al were obtained by the simultaneous photodissociation of Al(CH3)3 and GeH4.
TL;DR: In this article, the first observation of a two-dimensional, high-mobility electron gas in a selectively doped In0.53Ga0.47 As-InP heterojunction grown by metalorganic chemical vapor deposition was reported.
Abstract: We report, from Shubnikov‐de Haas and cyclotron resonance experiments, the first observation of a two‐dimensional, high‐mobility electron gas in a selectively doped In0.53Ga0.47 As‐InP heterojunction grown by metalorganic chemical vapor deposition. Several parameters of the electronic system under consideration are determined.
Patent•
27 Aug 1982TL;DR: In this paper, a film with a small number of pinholes was formed at a relatively high deposition rate by combinations of power generator frequencies of, for example, 13.56 MHz and 1 MHz, 1 MHz and 50 KHz, and 5 MHz and 400 KHz.
Abstract: A plasma chemical vapor deposition method for forming a film on a substrate which is placed on one of a pair of electrodes oppositely arranged within the reaction chamber of a reactor. A plurality of power generators of different frequencies are applied to the electrodes to excite reactive gases introduced into the reaction chamber, whereby the reactive gases are transformed into a plasma and a desired film is formed on the substrate. Film with a small number of pinholes was formed at a relatively high deposition rate by combinations of power generator frequencies of, for example, 13.56 MHz and 1 MHz, 13.56 MHz and 50 KHz, and 5 MHz and 400 KHz.
TL;DR: In this article, the design and operation of a second generation silicon MBE apparatus are described, which includes instrumentation for low and high energy electron diffraction, Auger electron spectroscopy and residual gas analysis.
Abstract: The design and operation of a second generation silicon MBE apparatus are described. A large sample loading interlock permits rapid introduction of standard format 3–4‐in.‐diam silicon and sapphire substrates. Silicon and metallic species are deposited from dual e‐beam evaporation sources at rates of up to 1/3 μm/min. Dopants are introduced by evaporation from conventional Knudsen cells or by simultaneous, low energy ion implantation. Silicon, metal and ionized dopant fluxes are directly sensed and regulated to within ∠1% of preprogrammed values. Rotation of the substrate yields deposition uniformity of ?1% across a 3‐in. wafer. The system includes instrumentation for low and high energy electron diffraction, Auger electron spectroscopy and residual gas analysis.
TL;DR: Enhanced Hall effect mobilities have been measured in epitaxial (100)-oriented multilayer n-type Si/Si(1-x)Ge(x) films grown on single-crystal Si substrates by chemical vapor deposition.
Abstract: Enhanced Hall-effect mobilities have been measured in epitaxial (100)-oriented multilayer n-type Si/Si(1-x)Ge(x) films grown on single-crystal Si substrates by chemical vapor deposition. Mobilities from 20 to 40% higher than that of epitaxial Si layers and about 100% higher than that of epitaxial SiGe layers on Si were measured for the doping range 8 x 10 to the 15th to 10 to the 17th/cu cm. No mobility enhancement was observed in multilayer p-type (100) films and n-type (111)-oriented films. Experimental studies included the effects upon film properties of layer composition, total film thickness, doping concentrations, layer thickness, and growth temperature.
TL;DR: In this paper, SiO 2, with some impurities, such as hydrocarbon groups and water, was used for the preparation of high quality gate oxides for metal/oxide/semiconductor (MOS) studies.
TL;DR: In this article, a new region is reported in the temperature dependence of the growth rate of silicon through chemical vapor deposition (CVD) from SiH4 in H2 at atmospheric pressure (Eact = 51 kcal/mole).
Abstract: Below about 650 °C a new region is reported in the temperature dependence of the growth rate of silicon through chemical vapor deposition (CVD) from SiH4 in H2 at atmospheric pressure (Eact = 51 kcal/mole). Emissivity measurements during and after deposition offer experimental evidence for the presence of a hydrogenated layer a‐Si:H near the surface of the growing material. At higher surface temperatures the activation energy (32–38 kcal/mole) depends on the silane partial pressure. The solid growth is amorphous on both sides of the transition, which is governed by the incorporation of hydrogen.
Patent•
24 Feb 1982
TL;DR: The oxynitride film according to the present invention contains Ga and/or Al and has O/N ratio of at least 0.15 as discussed by the authors, which can be used either as a surface passivation film of III-V compound semiconductors such as GaAs or as an insulating film for active surface portions of IG-FET.
Abstract: The oxynitride film according to the present invention contains Ga and/or Al and has O/N ratio of at least 0.15. This film is obtained by relying on, for example, chemical vapor deposition technique. The O/N ratio in the film may be varied by, for example, varying the distance between the substrate and the substance-supply source, or by varying the proportion of an oxidizing gas contained in a carrier gas. This film is used either as a surface passivation film of III-V compound semiconductors such as GaAs, or as an insulating film for active surface portions of IG-FET, or as an optical anti-reflective film.
TL;DR: Laser spectroscopic methods have been developed for the detection of PH3, P2, AsH3, As2, InCl, and GaCl, using both tunable dye-laser induced fluorescence and excimer laser excitation as discussed by the authors.
Abstract: Laser spectroscopic methods have been developed for the detection of PH3, P2, AsH3, As2, InCl, and GaCl, using both tunable‐dye‐laser induced fluorescence and excimer laser excitation. These are the primary reactants participating in the chemical vapor deposition (CVD) of InP/InGaAsP epitaxial layers. Using a reaction tube designed to simulate a CVD growth reactor, the detection limits measured for all these species are well below those levels typically employed during layer growth. Specific applications are outlined, and several examples are given relating these techniques to conditions expected in InP/InGaAsP layer growth.
TL;DR: In this paper, an experimental study of the chemical vapor deposition (CVD) of TiB2 by the hydrogen reduction of TiCl4 and BCl3 with the purpose of obtaining very thick (more than 100 μm) and uniform coatings was conducted.
TL;DR: In this article, low pressure chemical vapordeposited (LPCVD) silicon nitride films on silicon have been characterized by means of Rutherford backscattering (RBS), Auger electron spectroscopy (AES) combined with ion sputtering, and spectroscopic ellipsometry.
Abstract: Low‐pressure chemical vapor‐deposited (LPCVD) silicon nitride films on silicon have been characterized by means of Rutherford backscattering (RBS), Auger electron spectroscopy (AES) combined with ion sputtering, and spectroscopic ellipsometry. It appeared that all LPCVD samples in the examined thickness range of 50 –500 A had an oxygen‐containing layer equivalent to 15–20 A of SiO2 at the nitride‐silicon interface. This interfacial layer originates from the native silicon oxide present at the silicon substrate when the deposition of nitride is started. For comparison, oxide‐free silicon substrates were nitrided in ammonia at temperatures between 800–1160 °C. The thermal nitride films were found to be very thin, at the most 30 A, even after 5 h of nitridation. Both the LPCVD and thermal nitride films oxidize slightly when transferred into the ambient; a surface layer equivalent to 8 A of SiO2 was detected. Auger and RBS results agree very well for all nitride films investigated. It is shown that RBS can be...
TL;DR: In this article, the ion beam was channeled through properly oriented polycrystalline grains, which acted as seeds for solid phase epitaxial recrystallization of the film.
Abstract: Thin polycrystalline silicon films have been amorphized by silicon ion implantation and subsequently annealed at 525 °C for various lengths of time. Due to channeling of the ion beam through properly oriented polycrystalline grains, a few grains survived the implantation step and acted as seeds for solid phase epitaxial recrystallization of the film. This technique makes it possible to increase the grain size of thin polycrystalline films at very low temperatures.
TL;DR: In this paper, structural and electrical properties for amorphous silicon nitride films prepared from SiH4•N2•Ar mixtures have been investigated, and a high degree of perfection (N/Si ratio=1.33 and density=3.2 g/cm3) is obtained at 350 °C and 1.19 W/cm2 (13.56 MHz).
Abstract: The structural and electrical properties for plasma chemical vapor deposition amorphous silicon nitride films prepared from SiH4‐N2‐Ar mixtures have been investigated. Substrate temperature varied between 250 and 350 °C, and rf power density was set up in a range between 0.51 and 1.19 W/cm2 (13.56 MHz). Film composition changes toward a Si rich state with increasing substrate temperature or decreasing rf power density. Film density increases with increasing substrate temperature and rf power density. Film with a high degree of perfection (N/Si ratio=1.33 and density=3.2 g/cm3), is obtained at 350 °C and 1.19 W/cm2. Average electronic polarizability, dielectric strength, and Poole‐Frenkel barrier height become smaller, stronger, and larger, respectively, when film structure approaches perfection. The electrical properties are degraded largely by annealing (700 °C, in a N2 gas), when as‐grown films structure is far from perfection. This instability of electrical properties is attributed to the increase of trap density due to dehydrogenation and densification.
TL;DR: Transparent hexagonal BN films were deposited onto copper substrates from the reactant gas BCl3-NH3-H2 at temperatures in the range 250-700°C as mentioned in this paper.