Showing papers on "Equivalent series resistance published in 1978"
TL;DR: In this paper, the first step toward the realization of a power microwave SIT was taken by employing a distributed electrode structure and traveling-wave operation, and the Si SIT's which generate a 40-W output power at 200 MHz and 10 W at 1 GHz, with a cutoff frequency higher than 2.5 GHz, were fabricated.
Abstract: The principal operating mechanism of the static induction transistor (SIT) that shows exponential rather than the saturated I-V characteristics, is based on the static induction of both gate and drain voltages. It is known that the SIT has low noise, low distortion, and high audio-frequency power capability. The SIT is also a very promising device for high-frequency and high-power operation because of its short channel length, low gate series resistance, small gate-source capacitance, and small thermal resistance. Si SIT's which generate a 40-W output power at 200 MHz and 10 W at 1 GHz, with a cutoff frequency higher than 2.5 GHz, have been fabricated. This is the first step toward the realization of a power microwave SIT. Future developments of a higher power higher frequency SIT can be realized by employing a distributed electrode structure and traveling-wave operation.
74 citations
TL;DR: In this article, the I-V characteristics of a static induction transistor (SIT) and their temperature dependence are established experimentally, and they are consistent with a major current transport mechanism of majority-carrier injection control plus the effect of series channel resistance.
Abstract: It is established experimentally that the I-V characteristics of a static induction transistor (SIT) and their temperature dependence are consistent with a major current transport mechanism of majority-carrier injection control plus the effect of series channel resistance. The I-V characteristics follow an exponential behavior in the low-current region and change to approximately a linear-or square-law relation in the high-current region where the negative feedback effect of the series channel resistance becomes pronounced. That the series channel resistance is small in the SIT and satisfies the condition that the product of series channel resistance and dc intrinsic transconductanee is less than unity is experimentally verified. The voltage amplification factor in the SIT has been confirmed to be almost constant for wide variations of drain current and ambient temperature.
61 citations
Patent•
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TL;DR: In this article, an insulated-gate field-effect transistor has polycrystalline silicon or other resistance layer connected between its gate and drain electrode to permit during operation of the device the formation of a potential distribution along the resistance layer.
Abstract: A field-effect device, e.g. an insulated-gate field-effect transistor has field-relief means in the form of a polycrystalline silicon or other resistance layer connected between its gate and drain electrode to permit during operation of the device the formation of a potential distribution (V G , V D ) along the resistance layer. The resistance layer and its potential distribution extend over the current path in a low-doped drain zone to permit a high drain breakdown voltage without an unacceptable increase in drain series resistance or unacceptable decrease in transconductance.
35 citations
TL;DR: In this article, the depletion layer capacitance of a Schottky barrier on a GaAs FET film can only be measured in series with the resistance of the undepleted portion of the film.
Abstract: The depletion layer capacitance of a Schottky barrier on a GaAs FET film can only be measured in series with the resistance of the undepleted portion of the film. This inherent series resistance may be significant at all values of bias and causes large errors in C-V profile determinations. By treating the depletion layer capacitance and the series resistance as a distributed RC transmission line, it is possible to define an effective series resistance which can be related directly to the resistivity of the film. Using parameters typical of epitaxial films grown for GaAs FET applications, general criteria are developed for the profilability of these films. It is shown that, in general, films with small pinchoff voltages (i.e., films intended for low-noise FET applications)
22 citations
TL;DR: In this paper, the performance of avalanche diode structures with an etched optical window at the top contact has been evaluated and it was shown that the optical window does not introduce appreciable series resistance nor degrade oscillator performance.
Abstract: The r.f. performance of avalanche diode structures with an etched optical window at the top contact has been evaluated. Diode Q and r.f. oscillator tests in X -band IMPATT and S -band TRAPATT silicon diodes show that the optical window does not introduce appreciable series resistance nor degrade oscillator performance.
22 citations
TL;DR: In this article, an antireflection-coated GaAlAs double-heterostructure photovoltaic detector is described whose extrinsic power conversion efficiency is 56% when used with a focused 8075-μm wavelength laser beam.
Abstract: An antireflection‐coated GaAlAs double‐heterostructure photovoltaic detector is described whose extrinsic power conversion efficiency is 56% when used with a focused 8075‐μm wavelength laser beam. This, to our knowledge, is the highest photovoltaic efficiency yet reported. A partially reflective rear contact provides extrinsic quantum efficiencies exceeding 0.90 with a relatively thin active region. By restricting the diameter of this contact to 50 μm and using high dopings to reduce series resistance, open‐circuit voltages of 1.15 V and fill factors up to 0.84 are obtained. The series resistance was 3.0 Ω, with 1.0 Ω being attributable to the contacts.
22 citations
TL;DR: In this paper, various methods for determining the series resistance of p-n junction diodes and solar cells are described and compared, and new methods involving the measurement of the ac admittance are shown to have certain advantages over methods proposed earlier.
Abstract: Various methods for determining the series resistance of p-n junction diodes and solar cells are described and compared. New methods involving the measurement of the ac admittance are shown to have certain advantages over methods proposed earlier.
20 citations
Proceedings Article•
01 Jan 1978
14 citations
TL;DR: In this paper, a double epitaxial gallium arsenide tuning diode has been developed for TV varactor tuners, and the capacitance variation ratio is 6.0 and is large enough to cover the UHF TV broadcasting band.
Abstract: A double epitaxial gallium arsenide tuning diode has been developed for TV varactor tuners. The capacitance variation ratio is 6.0 and is large enough to cover the UHF TV broadcasting band. Diode series resistance is 0.18 Ω ( Q = 200 ) at 470 MHz, and at a capacitance of 9 pF. This resistance is 4.4 times smaller than Si diodes in its mean value. Contribution of each resistance component to the total diode resistance was studied. The result shows that package loss is 0.11 Ω, RF skin-effect resistance is 0.05 Ω, and the undepleted epitaxial layer resistance is 0.048 Ω. Therefore, a diode with a 0.075-Ω ( Q = 480 ) series resistance at 470 MHz could be developed, if package loss and RF skin-effect resistance are improved.
12 citations
TL;DR: Improvements on an impedance measuring circuit for the measurement of very small conductance at very high frequency and one of its applications, viz., the accurate measurement of dielectric constant and loss angle of very low loss materials are described.
Abstract: This paper describes improvements on an impedance measuring circuit for the measurement of very small conductance at very high frequency and one of its applications, viz., the accurate measurement of dielectric constant and loss angle of very low loss materials. In this circuit, a feedback loop for the stabilization of the output level of the high‐frequency oscillator unit also provides compensation for the changes of the series resistance of resonance coil and the transfer characteristic of the detector that occur with their temperature drifts. This circuit has the sensitivity and stability to detect a 0.002 μmho change in a 16‐pF specimen at 100, 150, or 200 MHz. It is capable of measuring a loss angle of several μrad with the electrode system developed for the varying gap immersion method. The warming‐up time is also shortened to about 10 min even for measurements requiring the highest sensitivity.
10 citations
TL;DR: In this article, a theoretical calculation of the short circuit current of the Schottky barrier solar cells on applying Fuchs-Sondheimer's theory to calculate the electrical resistivity in thin metal films is presented.
Abstract: The thickness of the barrier metals on the Schottky solar cells is very critical to the conversion efficiency. A theoretical calculation of the short circuit current of the Schottky barrier solar cells on applying Fuchs-Sondheimer's theory to calculate the electrical resistivity in thin metal films, and Handy's approach to calculate the series resistance on a given configuration of the contact grids shows that the optimum thickness which gives maximum short circuit current closely depends onthe intensity of the illuminating light and on the series resistance of the device. The optimum thickness shifts toward thicker film as the illuminating light or the series resistance increases. Fabrication of these devices on MIS solar cells indicates that the monitored optimum thickness satisfactorily agrees with the theoretical values.
01 May 1978
TL;DR: The inductance value of a foil-wound inductor is equal to that of a similar wire-wired inductor at low frequencies, but as the frequency rises, the foil inductance decreases by about 10% because of current redistribution across the foil width.
Abstract: The inductance value of a foil-wound inductor is equal to that of a similar wire-wound inductor at low frequencies, but as the frequency rises, the foil inductance decreases by about 10% because of current redistribution across the foil width. A table and a formula for d.c. inductance values are given. The occurrence of a first resonance frequency due to intertum capacitance is explained and an approximate formula stated. Methods of optimising the design of foil inductors are described. Compared with wire inductors, foil coils have considerable a.c. resistance.
TL;DR: In this paper, contributions from semiconductor plasma resonance and skin effect to the series resistance of Schottky barrier diodes are incorporated in a calculation of conversion loss for the submillimeter region.
Abstract: Contributions from semiconductor plasma resonance and skin effect to the series resistance of Schottky barrier diodes are incorporated in a calculation of conversion loss for the submillimeter region. The calculation includes both intrinsic and parasitic losses and shows the conversion loss to be strongly dependent upon frequency of operation and upon diode diameter. At higher frequencies mixer performance may be optimized by careful choice of epitaxial carrier concentration and of diode size.
TL;DR: In this paper, the influence of several diode parameters on the light-delay time of large-area Si/Zn doped GaAs-GaAlAs SH-junction LED's has been investigated experimentally.
Abstract: The influence of several diode parameters on the light-delay time of large-area Si/Zn doped GaAs-GaAlAs SH-junction LED's has been investigated experimentally. Beside the dominant influence of the depletion-layer capacitance, the extrapolated saturation current, the series resistance, and the non-linearity of the transfer function between diode current and light output have to be considered to explain the observed spread of delay times at low and medium pulse currents. An analytical expression for the delay time in terms of four or five diode parameters which are easily measurable at low frequencies is given. A satisfactory agreement between calculated and measured results for low and medium pulse currents is achieved only if the nonlinearity between light emission and current is included in the analysis. This effect has not been discussed in previous publications.
TL;DR: In this paper, the standard deviation of resistance distribution is 11.6% and the C3/C25 ratio is about 5.7% for the Gallium-Arsenide varactor diodes.
Abstract: Gallium-arsenide varactor diodes have been developed by using ion implantation techniques. Diode series resistance is around 0.25 Ω and uniform among diodes. The standard deviation of resistance distribution is 11.6%. Capacitance variation ratio, C3/C25, is about 5.7.
TL;DR: In this article, an improved ion implantation and l.h.f. t.v. techniques were used to improve uniformity and reproducibility of diode capacitance.
Abstract: Gallium arsenide varactor diodes with low series resistance (∼0.25 Ω) for u.h.f. t.v. tuners are developed. Uniformity and reproducibility of diode capacitance is improved markedly by using improved ion implantation and l.p.e. techniques. The standard deviation of diode capacitance distribution is 0.74% at V = 3.0 V within a wafer. A good r.f. tracking characteristic can be obtained in varactor tuners.
TL;DR: In this paper, shadow masked proton bombardment and metal evaporation are used to obtain planar beam-leaded devices with zero bias capacitance of 0.06 pF and series resistance of less than 3 Ω.
Abstract: The fabrication of mixer diodes for use at millimeter-wave frequencies requires the definition of extremely small area Schottky-barrier junctions. It is not a trivial matter to fabricate such devices at low cost which simultaneously are mechanically rugged, exhibit low parasitics, and present high figures of merit. This paper presents a novel technology for accomplishing these objectives. By incorporating "shadow masked" proton bombardment and metal evaporation, planar beam-leaded devices of low capacitance are realized in the absence of the critical processing steps which have traditionally resulted in low yields. GaAs devices having zero bias capacitance of 0.06 pF are obtained with a series resistance of less than 3 Ω giving a cutoff frequency in excess of 800 GHz. Initial RF tests have resulted in a noise figure and conversion loss of 5.8 and 3.8 dB, respectively, at 10.7 GHz. This technology should result in the availability of inexpensive GaAs mixer diodes suitable for use at millimeter-wave frequencies.
Proceedings Article•
01 Jan 1978
TL;DR: The silicon-on-ceramic (SOC) process uses inexpensive ceramic substrates to provide supported growth of silicon from the melt and the conditions for unidirectional solidification, the grain structure and other properties are quite similar to those of EFG silicon ribbon solar cells with interdigital electrodes have demonstrated AMl conversion efficiencies (active area) of 78% without AR coatings and 101% with an AR coating of SiO Mathematical modeling of the series resistance of cells shows the feasibility of making electrical contact to the base layer of the cell through slots in the substrate
Abstract: The silicon-on-ceramic (SOC) process uses inexpensive ceramic substrates to provide supported growth of silicon from the melt The conditions for unidirectional solidification, the grain structure and other properties are quite similar to those of EFG silicon ribbon Solar cells with interdigital electrodes have demonstrated AMl conversion efficiencies (active area) of 78% without AR coatings and 101% efficiencies with an AR coating of SiO Mathematical modeling of the series resistance of cells shows the feasibility of making electrical contact to the base layer of the cell through slots in the substrate However, series resistance in the base layer sets an upper limit on slot spacing for efficient cell performance
Patent•
13 Mar 1978
TL;DR: Correlated electrolytic capacitors having a standard diameter in which each capacitor has a constant foil length providing operation at a standard frequency with an equivalent series resistance not appreciably in excess of the lowest ESR for the standard frequency as discussed by the authors.
Abstract: Correlated electrolytic capacitors having a standard diameter in which each capacitor has a constant foil length providing operation at a standard frequency with an equivalent series resistance not appreciably in excess of the lowest ESR for the standard frequency
IBM1
TL;DR: The V-Groove multijunction (VGMJ) solar cell as mentioned in this paper is an array of many individual diode elements connected in series to produce a highvoltage low-current output.
Abstract: A new type of silicon photovoltaic converter has been developed called the V-Groove Multijunction (VGMJ) solar cell. The VGMJ solar cell consists of an array of many individual diode elements connected in series to produce a high-voltage low-current output. All the elements of the cell are formed simultaneously from a single silicon wafer by V-groove etching. The results of detailed computer simulations predict a conversion efficiency in excess of 24 percent for this cell when it is operated in sunlight concentrated 100 or more times. The advantages of this cell over other silicon cells include the capability for greater than 20-percent conversion efficiency with only modest bulk carrier lifetimes, a higher open-circuit voltage, a very low series resistance, a simple one-mask fabrication procedure, and excellent environmental protection provided by a glass front surface.
Patent•
06 Mar 1978
TL;DR: In this article, a light emitting diode (LED) was used to reduce power consumption by driving a light-emitting diode without using the series resistance for voltage dropping.
Abstract: PURPOSE:To reduce power consumption by driving a light emitting diode without using the series resistance for voltage dropping.
TL;DR: In this article, a simple technique for the assessment of parasitic effects in second-order active-filter configurations is developed, where a knowledge of the ω 0 and Q sensitivities to the ideal (parasitic-free) components permits the straightforward computation of these effects.
Abstract: A simple technique for the assessment of parasitic effects in second-order active-filter configurations is developed. It is shown that a knowledge of the ω0 and Q sensitivities to the ideal (parasitic-free) components permits the straightforward computation of these effects. Results relating to capacitors, resistors, inductors, and gain components are reported.
Patent•
02 Nov 1978
TL;DR: In this paper, an impulse generator is used to generate a sequence of pulses which are applied to a typically two phase network (R, S) through a series resistance (RK), and a detection circuit (TP) incorporating a low pass filter (C1, C2, L1, L2) and a series of linear amplifiers (IM) together with a number of sequenced switches (S1, S2, S3) provides a reading of the insulation impedance in a suitable meter (M) after filtering out noise, short term effects, and the like.
Abstract: The equipment is used for determining the insulation resistance of a multiple phase network. It can incorporate rectifiers and direct voltage components using an impulse generator and filtering detection circuit. The device can be applied to single, two or three phase networks. An impulse generator (IG) generates a sequence of pulses which are applied to a typically two phase network (R, S) through a series resistance (RK). A detection circuit (TP) incorporating a low pass filter (C1, C2, L1, L2) and a series of linear amplifiers (IM) together with a number of sequenced switches (S1, S2, S3) provides a reading of the insulation impedance in a suitable meter (M) after filtering out noise, short term effects, and the like.
TL;DR: The structure and fabrication of a Schottky-barrier gate FET (SB-VFET) with a nonplanar conduction channel fabricated by preferential etching of silicon axe was described in this article.
Abstract: The structure and fabrication of a Schottky-barrier gate FET (SB-VFET) with a nonplanar conduction channel fabricated by preferential etching of silicon axe described in this paper The device exhibits high transconductance and low series resistance and is suitable for low-noise applications at the lower end of the microwave spectrum The low-frequency transconductance per unit channel length of 6 µm-gate device was typically 188 mΩ/mm, the gate breakdown voltage was 7 V, and the cutoff frequency was 13 GHz The noise figure with the device biased for maximum gain was typically 4 dB at 350 MHz A simplified theory adequate for engineering design purposes is proposed to explain the characteristics of the device and an equivalent circuit is used to model the high-frequency behavior The theory is shown to be in agreement with experimental results Frequency limitations of the present device are discussed and further improvements are proposed
TL;DR: In this article, the authors used amorphous silicon on stainless steel, with a top barrier contact of Ni/TiOx, and achieved 4.8% power conversion efficiency without an antireflection coating.
Abstract: M.I.S. solar cells of amorphous silicon on stainless steel, with a top barrier contact of Ni/TiOx, have given 4.8% power conversion efficiency without an antireflection coating. The insulating layer, with an optimum thickness of ? 2nm, compensates for the low work function of nickel compared with platinum, and enables similar high open-circuit voltages (up to 680 mV) to be obtained. The fill factor is not appreciably degraded by the addition of an insulating layer, unless this is thicker than = 3 nm. Under illumination, the diode characteristics change compared with their behaviour in the dark; the diode factor, the barrier height, and the series resistance are all dependent on light intensity.
Patent•
31 Jan 1978
TL;DR: In this paper, a low impurity concentration layer having a thickness smaller than the diffusion length of minority carriers between PN junction and semiconductor surface was proposed to reduce the surface recombination of carriers, lower the series resistance of diffused layers and increase conversion efficiency by providing a very low impurbation concentration layer.
Abstract: PURPOSE:To reduce the surface recombination of carriers, lower the series resistance of diffused layers and increase conversion efficiency by providing a low impurity concentration layer having a thickness smaller than the diffusion length of minority carriers between PN junction and semiconductor surface
TL;DR: In this article, the dependence of the resistance associated with the equivalent circuit with gate protection on the electrical breakdown voltage was analyzed in terms of the transient solution of an equivalent circuit and the series resistance for the input voltage and the dynamic resistance in the breakdown region of the protective diode were found to have pronounced effects on the voltage of the gate oxide, while the distributed resistance has a lesser effect on it.
Abstract: The dependence of the resistance associated with the equivalent circuit with gate protection on the electrical breakdown voltage was analyzed in terms of the transient solution of the equivalent circuit. The series resistance for the input voltage and the dynamic resistance in the breakdown region of the protective diode are found to have pronounced effects on the electrical breakdown voltage of the gate oxide, while the distributed resistance has a lesser effect on it.