Showing papers on "Graphene oxide paper published in 1993"
TL;DR: Refractory metal-oxide coatings are deposited by reactive dc magnetron sputtering in an oxygen environment and the optical constants and the environmental stability of silicon oxide, aluminium oxide, hafnium oxide, zirconiumoxide, tantalum oxide, titanium oxide, and a blend of ha fnium oxide with silicon oxide are investigated.
Abstract: Refractory metal-oxide coatings are deposited by reactive dc magnetron sputtering in an oxygen environment. The optical constants and the environmental stability of silicon oxide, aluminium oxide, hafnium oxide, zirconium oxide, tantalum oxide, titanium oxide, and a blend of hafnium oxide with silicon oxide are investigated. Properties of both single-layer and multilayer interference filters are examined.
120 citations
TL;DR: In this article, thin layers of tantalum oxide and aluminum oxide were deposited using the atomic layer epitaxy technique at a temperature of 300 °C from metallic chlorides and H2O.
79 citations
Patent•
22 Apr 1993TL;DR: A process for the preparation of light-colored, electrically conductive pigments based on substrates having an expansion of not more than 500 μm is described in this paper, which pigments consist of one or more metals, metal oxides or materials containing metal oxide, silicon oxide or silicate materials.
Abstract: A process for the preparation of light-colored, electrically conductive pigments based on substrates having an expansion of not more than 500 μm, which pigments consist of one or more metals, metal oxides or materials containing metal oxide, silicon oxide or silicate materials and contain, if desired above one or more other metal oxide and/or silicon oxide layers, an outer layer based on halogen-doped tin oxide and/or titanium oxide.
37 citations
Patent•
30 Jul 1993TL;DR: In this article, a method for forming a groove wiring layer, including the steps of forming a metal oxide film, consisting of a metal which is a main component constituting the metal oxide, was presented.
Abstract: According to this invention, there is provided a method of forming a groove wiring layer, including the steps of forming a metal oxide film, consisting of a metal oxide having a decrease in standard free energy smaller than a decrease in standard free energy of a hydrogen oxide or of a carbon oxide, on an insulating film formed on a semiconductor substrate, and reducing the metal oxide film to form an electrode-wiring layer consisting of a metal which is a main component constituting the metal oxide. In this manner, an electrode-wiring layer having high EM and SM resistances without causing an increase in electric resistivity caused by an impurity or the like can be obtained.
37 citations
TL;DR: In this article, the anodic dissolution of p-type silicon has been investigated by using electromodulated infrared spectroscopy, and it was shown that during porous silicon formation, the surface remains hydrogenated, whereas an insulating interfacial oxide layer is formed during electropolishing.
29 citations
TL;DR: In this paper, the authors evaluated the electrical properties of very thin oxides including oxide films formed in various chemicals by means of the ultraclean oxidation system and found that the oxide film formed in H2SO4/H2O2, O3/H 2O, and Hot H2O 2 can suppress increase of surface microroughness when heating of the wafer to thermal oxidation temperature in inert gas ambience.
Abstract: Electrical characteristics of the very thin oxides including oxide films formed in various chemicals were evaluated by means of the ultraclean oxidation system. The very thin oxides including the oxide films formed in H2SO4/H2O2, O3/H2O, and Hot-H2O2 have been found superior terms of reliability to those including the oxide films formed in NH4OH/H2O2/H2O and HCl/H2O2/H2O. The oxide films formed in H2SO4/H2O2, O3/H2O, and Hot-H2O2 have been found to function as the controlled passivation films which suppress increase of surface microroughness when heating of the wafer to thermal oxidation temperature in the inert gas ambience.
21 citations
Patent•
13 Dec 1993
TL;DR: In this article, a layered copper oxide sacrificial release material is used to separate the oxide film from the growth substrate, and then the structure is etched to protect the etched film.
Abstract: Novel structures and methods utilize layered copper oxide release materials to separate oxide films from growth substrates. Generally, the method comprises the steps of: first, forming a layered copper oxide sacrificial release material on a growth substrate, in the preferred embodiment being the high temperature superconductor YBCO grown on a compatible substrate such as LaAlO3, second, forming an oxide film on the layered copper oxide release material, in the preferred embodiment, a ferroelectric, an optical material or a oxide film compatible with further high temperature superconductor growth, such as SrTiO3 or CeO2, and third, etching the layered copper oxide release material so as to separate the oxide film from the growth substrate. Optionally, additional layers may be grown on the oxide film prior to etching. In the preferred embodiment, when high temperature superconducting devices are formed, the oxide films would be a material such as SrTiO3 or CeO2, upon which yet another high temperature superconducting film would be grown. After patterning and protecting the etched film, the structure may be etched. Generally, any of the layered copper oxide films, such as YBCO, TlCaBaCuO, LaSrCuOx and BiSrCaCuOx can be used. Oxide films having a substantially lower etch rate than the layered copper oxide materials incompatible with growth on the layered copper oxide materials may be utilized.
18 citations
15 citations
TL;DR: In this paper, pure and antimony-incorporated TiO2 thin films were prepared using a spray-CVD method, which allowed for convenient incorporation of foreign atoms into the oxide matrix during film growth.
11 citations
TL;DR: In this paper, the initial stages of oxide growth on Al and Si are studied by X-ray photoelectron spectroscopy and Xray-induced Auger electron spectrography methods.
11 citations
01 Jan 1993
TL;DR: In this paper, the EEL-spectra of surface states was used to discriminate between adsorption on ideal terrace sites and defect sites by using the surface states of NiO and Cr2O3.
Abstract: We report adsorption studies on clean and modified surfaces of NiO, Cr2O3 and Al2O3. Small molecules such as NO, CO and H2O are adsorbed. The oxides are studied as bulk single crystals as well as as single crystal films. We are able to discriminate between adsorption on ideal terrace sites and defect sites by using EEL-spectra of surface states.
TL;DR: A dual-layer silicon oxide consisting of reoxidized low-pressure thermal oxide and chemically vapour deposited high temperature oxide at a low pressure prepared by an intra-chamber process is introduced in this article.
TL;DR: In this paper, the oxide of manganese which is a component of an oxide electrode was plated on a yttria stabilized zirconia substrate by oxidizing the hydroxide using hydrogen peroxide as an oxidant.
Patent•
26 Aug 1993TL;DR: In this article, the major amount of the metal oxide is tin oxide, and a minor amount is boron oxide, which is sufficient to enhance the conductivity of the composition.
Abstract: Metal oxide heteropolycondensates of tin and boron, particularly heteropolycondensates of this type wherein the major amount of the metal oxide is tin oxide, and a minor amount is boron oxide. The quantity of boron oxide is sufficient to enhance the conductivity of the composition.
01 Jan 1993
TL;DR: In this paper, the influence of the Si surface microroughness and the native oxide on the integrity of the gate oxide can no longer be neglected and the importance of microcontamination such as particles, organic impurities and metallic impurities on a Si surface is well known to degrade the electrical insulating performance and the reliability of gate oxide.
Abstract: Understanding and controlling of the factors which determine the integrity of very thin gate oxide films is becoming increasingly important with the scaling down of metal-oxide-semiconductor (MOS) ultra large scale integration (ULSI) devices. Existence of microcontamination such as particles, organic impurities and metallic impurities on a Si surface is well known to degrade the electrical insulating performance and the reliability of the gate oxide. Additionally, as the gate oxide becomes thinner, the influence of the Si surface microroughness and the native oxide on the integrity of the gate oxide can no longer be neglected.
Patent•
29 Dec 1993
TL;DR: In this article, a method for producing an oxide thin film, giving the thin film flat in its growth surface at an atomic level and good in the crystal on the growth of the oxide crystal, is presented.
Abstract: PURPOSE: To provide a method for producing an oxide thin film, giving the thin film flat in its growth surface at an atomic level and good in the crystal on the growth of the thin film of the oxide crystal. CONSTITUTION: While or after an oxide crystal thin film is grown on a substrate 1 held at a prescribed temperature by a gaseous phase growth method, oxygen gas and a metal element are charged to adhere a non-crystallized metal oxide 3 to the growth surface 3 or the oxide crystal 2 or to the thin film of the oxide crystal. A substance constituting the oxide crystal is transported through the metal oxide 3. Then, the charging of the metal element is stopped, and the metal oxide is again evaporated. Thereby the flatness and crystallinity of the surface 3' of the oxide crystal thin film is improved. COPYRIGHT: (C)1995,JPO
Patent•
17 Nov 1993TL;DR: In this paper, a method for preparing a thin film formed of an oxide superconductor on a substrate by emitting molecular beams of constituent elements of the oxide super-conductor to the substrate under high vacuum was proposed.
Abstract: A method for preparing a thin film formed of an oxide superconductor on a substrate by emitting molecular beams of constituent elements of the oxide superconductor to the substrate under high vacuum, wherein at first a molecular beam of one of the constituent elements of the oxide superconductor, of which an oxide thin film can be deposited so as to have a smooth surface, is emitted so as to form the oxide thin film of one or two unit cells. And then, all the molecular beams of constituent elements of the oxide superconductor are emitted to the oxide thin film so as to form the oxide superconductor thin film.
Patent•
30 Jul 1993TL;DR: In this article, a metal oxide film is formed on a insulating film on a semiconductor substrate, which is reduced for forming an electrode-wiring layer of metal which is a main component of the metal oxide, e.g. copper or silver.
Abstract: The method involves forming a wiring layer in a groove. A metal oxide film is formed on a insulating film (2) on a semiconductor substrate (1). The oxide film is formed from a metal oxide having removed, or decreased normal free energy, which is less than the reduction or removal of the normal free energy of hydrogen oxide or carbon oxide. The metal oxide film is reduced for form an electrode-wiring layer (5) of metal which is a main component of the metal oxide, e.g. copper or silver. ADVANTAGE - High resistance to ion migration and stress migration, without increasing specific electrical resistance due to impurity etc.
Patent•
24 Feb 1993TL;DR: In this paper, the authors presented a method for preparing a textured oxide superconductor of desired form, comprising of a precursor solution comprising a metal μ-oxo alkoxide containing metallic constituents of an oxide coating, dispersing a metal oxide powder into said precursor solution, and removing excess solvent from said precursors, thereby depositing a precursor film comprising said metallic constituents on said mixed oxide powder and decomposing said precursor film to form said metal oxide coating.
Abstract: In one aspect, the present invention is a precursor powder to an oxide superconductor, namely a coated particle comprising a metal oxide particle core (including a mixed metal oxide, e.g., BSCCO-2212 or YBCO-123) on which is deposited a secondary metal oxide coating (e.g., Mn CuOx or CuO). The metal oxide particle and secondary metal oxide coating together comprise metallic elements having a stoichiometry appropriate for the formation of a desired oxide superconductor. The metal oxide reacts with the secondary metal oxide under suitable conditions (e.g., heating) to form the desired oxide superconductor (e.g., BSCCO-2223 or YBCO-124). In another aspect, the invention is a method for preparing such a coated particle, comprising: preparing a precursor solution comprising a metal μ-oxo alkoxide containing metallic constituents of an oxide coating; dispersing a metal oxide powder into said precursor solution; removing excess solvent from said precursor solution, thereby depositing a precursor film comprising said metallic constituents of said oxide coating on said mixed oxide powder; and decomposing said precursor film to form said metal oxide coating. Also encompassed is a method of forming a textured oxide superconductor of desired form.
Patent•
16 Sep 1993
TL;DR: In this article, a material for electric contacts based on silver-tin oxide is obtained by mixing a powder of silver or an alloy mainly containing silver with a powder consisting mainly of tin oxide and 0.01 to 10 wt. % of an additive consisting of one or more compounds containing silver, oxygen and a metal from subgroups II to VI of the periodic system and/or antimony, bismuth, germanium, indium and gallium, compacting the mixture and sintering it.
Abstract: A material for electric contacts based on silver-tin oxide is obtained by mixing a powder of silver or an alloy mainly containing silver with a powder consisting mainly of tin oxide and 0.01 to 10 wt. % (in relation to the quantity of tin oxide) of an additive consisting of one or more compounds containing silver, oxygen and a metal from sub-groups II to VI of the periodic system and/or antimony, bismuth, germanium, indium and gallium, compacting the mixture and sintering it. The tin oxide may be replaced by zinc oxide.