Showing papers on "IMPATT diode published in 1995"
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TL;DR: In this paper, the authors present a survey on the state-of-the-art performance of this technology and on first applications, the key devices are IMPATT diodes for MM-wave power generation and detection in the self-oscillating mixer mode, p-i-n dodes for use in switches and phase shifters.
Abstract: Silicon-based millimeter-wave integrated circuits (SIMMWIC's) can provide new solutions for near range sensor and communication applications in the frequency range above 50 GHz. This paper presents a survey on the state-of-the-art performance of this technology and on first applications, The key devices are IMPATT diodes for MM-wave power generation and detection in the self-oscillating mixer mode, p-i-n diodes for use in switches and phase shifters, and Schottky diodes in detector and mixer circuits. The silicon/silicon germanium heterobipolar transistor (SiGe HBT) with f/sub max/ values of more than 90 GHz is now used for low-noise oscillators at Ka-band frequencies. First system applications are discussed. >
60 citations
TL;DR: In this paper, a double-Read IMPATT diodes for D-band frequencies were designed and tested, and the module encapsulation technique was applied for reproducible RF impedance matching, where the active device was reduced by a titanium-Schottky contact instead of an alloyed n/sup +/- contact.
Abstract: CW GaAs double-Read IMPATT diodes for D-band frequencies are designed and tested. For reproducible RF impedance matching, the module encapsulation technique is applied. Ohmic losses of the active device are reduced by a titanium-Schottky contact instead of an alloyed ohmic n/sup +/-contact. At 144 GHz 100 mW RF power with a conversion efficiency of 5% is realised.
50 citations
TL;DR: In this paper, an integrated transmitter at 80 GHz is presented, which consists of an IMPATT diode and a slotted patch resonator, which acts simultaneously as an antenna and achieves an excellent carrier-to-noise ratio of 81.7 dBc/Hz at an offset of 100 kHz.
Abstract: An integrated transmitter at 80 GHz is presented. This device finds many applications in civil sensor and communication systems, and is employed in automotive applications. The device consists of an IMPATT diode and a slotted patch resonator. The resonator acts simultaneously as an antenna. The resonator impedance seen by the IMPATT diode is calculated by means of a full wave analysis and the matching of the IMPATT diode is investigated using a large signal analysis. The transmitter devices have been fabricated employing a SIMMWIC (silicon millimeter wave integrated circuit) fabrication process and deliver a radiated power of up to 1 mW at 79 GHz. An excellent carrier-to-noise ratio of 81.7 dBc/Hz at an offset of 100 kHz has been achieved. The deviation of the measured values from the theoretically predicted values of frequency and power is -5.9% and -1.5 dB, respectively. >
30 citations
TL;DR: In this paper, the results of accurate and realistic high-frequency numerical analysis of a silicon double avalanche region (DAR) diode indicate some unique and useful microwave characteristics, such as the negative resistance space distribution profiles of the diode at high frequencies of operation shows near sinusoidal variation, which suggests that a DAR diode can have several optimum diode widths for generation of a particular frequency.
Abstract: The results of accurate and realistic high-frequency numerical analysis of a silicon DAR (double avalanche region) diode indicate some unique and useful microwave characteristics. The DAR diode under any structural condition exhibits multiband microwave negative resistance characteristics between 8 and 350 GHz which would make it possible to realize wide-band microwave oscillations (8 to 350 GHz) from any single DAR diode with a multituning facility. The negative resistance space distribution profiles of the diode at high frequencies of operation shows near sinusoidal variation, which suggests that a DAR diode can have several optimum diode widths for generation of a particular frequency. The results have been explained on the basis of computation of the total avalanche delay produced in both avalanche regions and transmit time delay produced in the drift region.
22 citations
Book•
01 Jan 1995
TL;DR: In this paper, the authors present a collection of microwave tubes for focusing, focusing, and collection in Microwave Tubes, as well as a list of applications of microwave Tubes.
Abstract: Contributors. Preface. Microwave Transmission Lines. Microstrip Lines. Microwave Resonators. Microstrip Line Components. Microstrip Line Components Suspended-Substrate Technique. Microwave Filters. Directional Couplers. Microwave Ferrite Devices. Microwave Solid-State Devices. Transferred Electron Devices. Microwave IMPATT Diode Amplifiers and Oscillators. Microwave Transistor Oscillators and Amplifiers. Microwave Detectors, Mixers, Converters, and Harmonic Generators. Electron Beam Formation, Focusing, and Collection in Microwave Tubes. Microwave Solid-State Switches, Phase Shifters, and Attenuators. Microwave Thermionic Density Modulated Devices and Applications. Microwave Impedance Matching Techniques. References. Further Reading. Index.
10 citations
16 May 1995
TL;DR: In this article, the suitability of planar structures to work as a resonator for IMPATT diodes in a frequency range above 70 GHz was examined, where the impedance of the planar structure was characterized by the radiation characteristics of the structure.
Abstract: In this paper a method is presented to examine the suitability of planar structures to work as a resonator for IMPATT diodes in a frequency range above 70 GHz. The IMPATT diode is replaced by a Schottky diode previously characterized by impedance. It is suggested to test the suitability of the resonator for an IMPATT diode by employing the radiation characteristics of the structure. This set-up allows the determination of the detector's sensitivity depending on the frequency. The sensitivity corresponds to the matching of the resonator and the Schottky diode. Thus, for maximum sensitivity the equation Z/sub Schottky//spl ap/-Z*/sub IMPATT/ allows to assess the suitability of the planar structure to function as a resonator for an IMPATT diode. >
7 citations
TL;DR: In this article, a novel initiation scheme, utilizing the new pulsed IMPATT to generate millimeter-wave oscillations in a series-integrated quantum-well resonant tunneling diode (RTD), is proposed and theoretically investigated for the first time.
Abstract: A novel initiation scheme, utilizing the new pulsed IMPATT to generate millimeter-wave oscillations in a series-integrated quantum-well resonant tunneling diode (RTD), is proposed and theoretically investigated for the first time. To facilitate transient analysis, a generalized impedance is defined and adopted in this work. The detailed investigation of a two-RTD oscillator is carried out at 100 GHz. The maximum oscillator output power versus the minimum initial input power required of initiation is about 50%. The duration of only a few RF cycles is needed for such initiation. >
6 citations
25 Oct 1995
TL;DR: In this article, a planar array of solid-state oscillators for power combining at microwave and millimeter-wave frequencies is presented. But the work is limited to two terminal GUNN or IMPATT diodes as oscillators.
Abstract: There is a continuing and unmet need for high power, solid-state sources at microwave and millimeter wavelengths. At microwave frequencies, transmission line or cavity combiners have been successful, but at millimeter wavelengths this approach has problems in terms of losses, power output and dimensional tolerances. In the past few years, significant efforts have been carried out to develop planar arrays of solid-state oscillators in order to produce spatial power combining. These structures have used open Fabry-Perot as well as conventional transmission lines for combining the active devices, to proved feedback for coherent locking of the individual oscillating devices and to couple energy to an electromagnetic wavebeam. In addition a new class of hybrid planar quasi-optical waveguides and resonators are under investigation for power combining. Active devices utilized have included two terminal GUNN or IMPATT diodes as oscillators, and three terminal devices such as FETs or HEMTs as both oscillators and amplifiers. With three terminal devices currently being more popular. This presentation discusses architectures under active investigation.
4 citations
TL;DR: Improved boundary conditions for RF current flow across an interface between two different conducting media were derived for skin effect analysis of silicon-gold ohmic contact of a mm-wave IMPATT diode as discussed by the authors.
Abstract: Improved boundary conditions are derived for RF current flow across an interface between two different conducting media. The deduced conditions are used for skin effect analysis of silicon-gold ohmic contact of a mm-wave IMPATT diode. The resulting RF current flow exhibits refraction at the interface and the skin effect resistance (SER) exhibits monotonic increase with semiconductor thickness. The SER behaviour, although different from earlier published theoretical results, is shown to be more realistic and conforming to experimental observations.
4 citations
TL;DR: In this paper, the first CW operation of GaAs/AlGaAs multiquantum-well IMPATT oscillators at 100 GHz was reported, which yielded 6.4mW power at 100.3 GHz in a nonoptimized circuit.
Abstract: Multiquantum-well structures can be applied to the high-frequency IMPATT oscillators. The first CW operation of GaAs/AlGaAs multiquantum-well IMPATT oscillators at 100 GHz is reported here. Preliminary results yielded 6.4-mW CW power at 100.3 GHz in a nonoptimized circuit. Significantly higher powers are anticipated with further optimization of the circuit parameters. The modern epitaxial technology opens up a new field for two-terminal high-frequency sources. © 1995 John Wiley & Sons, Inc.
2 citations
TL;DR: In this article, a theoretical analysis of the relationship between the cap diameter and the oscillation frequency of a resonant cap IMPATT oscillator for the X-band has been carried out.
Abstract: A theoretical analysis has been carried out on the fields around an IMPATT diode embedded in a resonant cap cavity and the relationship between the cap diameter and the oscillation frequency of a resonant cap IMPATT oscillator for the X-band. The electromagnetic field equations of the radial transmission line have been solved for matched load impedance, taking device circuit interaction into consideration by using the successive approximation method. Numerical coefficients have been obtained from experimental data, giving the optimum ratio between the actual and effective cap diameters and wavelength when Dactual /λ. is 0-36 and D Deffective /λ. is 0-47. The influence of the cavity height has been studied to obtain Deffective /λ, which shows that the cavity height is of great importance in determining the frequency and power output in resonant cap IMPATT oscillators. The analysis indicates that not only the cap diameter but also the cap height play an important role in determining the frequency o...
Journal Article•
TL;DR: In this paper, a hydrodynamic model for modeling IMPATT diodes employing traditional and new semiconductor materials was proposed, and its adequacy was demonstrated on a millimeter-band GaAs IMPATT diode.
Abstract: A version of the hydrodynamic model, close to the diffusion-drift model in form, is proposed for modeling IMPATT diodes employing traditional and new semiconductor materials. Its adequacy is demonstrated on a millimeter-band GaAs IMPATT diode.
12 Dec 1995
TL;DR: In this article, a mathematical model for the analysis of high-power pulsed IMPATT-diode microwave oscillators is presented, which takes into account charge diffusion, impact ionization, carrier drift velocity changes as well as an exact temperature distribution along the active layer.
Abstract: Mathematical models for the analysis of high-power pulsed IMPATT-diode microwave oscillators are presented. These models take into account charge diffusion, impact ionization, carrier drift velocity changes as well as an exact temperature distribution along the active layer. The temperature distribution is of great importance for the computation of dynamic admittance characteristics. New type of IMPATT diode is proposed that has an improved generated frequency and power stability.
02 Oct 1995
TL;DR: Ppn-Junctions in IC processes are investigated for the use as an inductive design component and measurements of inductance, quality factor and noise under avalanche breakdown conditions are compared to device simulations and the theory for IMPATT diodes.
Abstract: pn-Junctions in IC processes are investigated for the use as an inductive design component. Measurements of inductance, quality factor and noise under avalanche breakdown conditions are compared to device simulations and the theory for IMPATT diodes. Inhomogeneous breakdown is also investigated.
Patent•
29 Mar 1995TL;DR: In this paper, an improved laser diode transmitter is described which protects the laser against excessively high modulation current and transmits an alarm signal to a monitoring device even if the monitor diode fails completely.
Abstract: of EP0379026Laser diode transmitters contain control circuits for the preconduction current and the modulation current of the laser diode which are controlled via a monitor diode optically coupled to the laser diode. Disablement of the monitor diode may result in an excessively low optical transmission level being deceptively simulated for the control circuit and the modulation current of the laser diode then being increased to the point where the latter is endangered. According to the invention, an improved laser diode transmitter is described which protects the laser diode against excessively high modulation current and transmits an alarm signal to a monitoring device even if the monitor diode fails completely.
01 Jan 1995
TL;DR: In this paper, microwave solid-state switches, phase shifters, and attenuators are discussed, and the important part of a microwave solid state phase shifter is a reverse biased varactor diode or the variable capacitance diode.
Abstract: This chapter deals with microwave solid-state switches, phase shifters, and attenuators. A microwave switch is basically a device that turns microwaves on and off. As for solid-state switching devices, transistors and diodes are logical candidates. Because of the simplicity and cost-effectiveness, most microwave solid-state switching devices practically in use are PIN junction diodes. The diode is operated under forward DC bias conditions to close the diode switch. When the diode is forward biased sufficiently, the diode resistance is very small and it presents very little loss for microwaves to propagate through. The attenuation of microwave power through the switching diode is essentially termed as the insertion loss. The chapter also discusses switching configurations namely single pole single throw (SPST), single pole double throw (SPDT), single pole multiple throw (SPMT), and other transfer switches. The important part of a microwave solid-state phase shifter is a reverse biased varactor diode or the variable capacitance diode. The chapter also analyses microwave solid-state attenuators. Forward biased PIN diodes are employed for microwave solid-state attenuators.
01 Jan 1995
TL;DR: In this paper, the authors focus on microwave solid-state devices, such as microwave mixer and detector diodes, microwave varactor diods, microwave PIN dodes, microwave GUNN diode, microwave IMPATT dode, microwave bipolar junction transistors, and microwave field effect transistors.
Abstract: Publisher Summary This chapter focuses on microwave solid-state devices, such as microwave mixer and detector diodes, microwave varactor diodes, microwave PIN diodes, microwave GUNN diodes, microwave IMPATT diodes, microwave bipolar junction transistors, and microwave field effect transistors. . Microwave mixer and detector diodes are normally metal–semiconductor junction rectifying diodes. The chapter includes their structure, characteristics, fabrication, operation, and models. The chapter also discusses the structure, characteristics, fabrication, operation, and models of microwave varactor diodes. A microwave Gunn diode is a transferred electron device that utilizes the negative differential resistance property, referred to as the transferred electron or Gunn effect. A microwave IMPATT diode is a semiconductor diode that operates with a reverse bias sufficient to cause avalanche breakdown. The IMPATT diode employs the carrier impact ionization and transit-time properties of a semiconductor structure to produce a negative resistance for microwave oscillation and amplification applications.
01 Jan 1995
TL;DR: The negative resistance associated with a DC-biased IMPATT is commonly used in the design of one-port reflection amplifiers for high-power millimeter-wave applications and exemplifies IMPATT diode oscillator design.
Abstract: This chapter begins with a discussion on IMPATT diode principles followed by a review of IMPATT diode fabrication, commercial IMPATT diode specifications, IMPATT diode amplifier design, IMPATT diode oscillator design, and the noise characteristics of IMPATT diode oscillators and amplifiers. IMPATT diode manufacturers use various specifications to describe IMPATT performance. The chapter summarizes IMPATT diode specifications for some commercial devices produced by several of the major diode manufacturers including primarily millimeter-wave devices. A summary of IMPATT specifications for some commercial devices designed for pulsed operation is also presented here. The chapter also offers some understanding regarding IMPATT diode amplifier design. The negative resistance associated with a DC-biased IMPATT is commonly used in the design of one-port reflection amplifiers for high-power millimeter-wave applications. The chapter also exemplifies IMPATT diode oscillator design. IMPATT diodes also find common use as the active element in high-power microwave and millimeter-wave oscillators. The design of these circuits closely parallels that of IMPATT-based reflection amplifier.
01 Jan 1995
TL;DR: In this article, the authors focus on microwave solid-state devices, such as microwave mixer and detector diodes, microwave varactor diods, microwave PIN diode, microwave GUNN dode, microwave IMPATT dide, microwave bipolar junction transistors, and microwave field effect transistors.
Abstract: Publisher Summary
This chapter focuses on microwave solid-state devices, such as microwave mixer and detector diodes, microwave varactor diodes, microwave PIN diodes, microwave GUNN diodes, microwave IMPATT diodes, microwave bipolar junction transistors, and microwave field effect transistors. . Microwave mixer and detector diodes are normally metal–semiconductor junction rectifying diodes. The chapter includes their structure, characteristics, fabrication, operation, and models. The chapter also discusses the structure, characteristics, fabrication, operation, and models of microwave varactor diodes. A microwave Gunn diode is a transferred electron device that utilizes the negative differential resistance property, referred to as the transferred electron or Gunn effect. A microwave IMPATT diode is a semiconductor diode that operates with a reverse bias sufficient to cause avalanche breakdown. The IMPATT diode employs the carrier impact ionization and transit-time properties of a semiconductor structure to produce a negative resistance for microwave oscillation and amplification applications.
01 Jan 1995
TL;DR: The chapter summarizes IMPATT diode specifications for some commercial devices produced by several of the major diode manufacturers including primarily millimeter-wave devices and offers some understanding regarding IMPatt diode amplifier design.
Abstract: Publisher Summary
This chapter begins with a discussion on IMPATT diode principles followed by a review of IMPATT diode fabrication, commercial IMPATT diode specifications, IMPATT diode amplifier design, IMPATT diode oscillator design, and the noise characteristics of IMPATT diode oscillators and amplifiers. IMPATT diode manufacturers use various specifications to describe IMPATT performance. The chapter summarizes IMPATT diode specifications for some commercial devices produced by several of the major diode manufacturers including primarily millimeter-wave devices. A summary of IMPATT specifications for some commercial devices designed for pulsed operation is also presented here. The chapter also offers some understanding regarding IMPATT diode amplifier design. The negative resistance associated with a DC-biased IMPATT is commonly used in the design of one-port reflection amplifiers for high-power millimeter-wave applications. The chapter also exemplifies IMPATT diode oscillator design. IMPATT diodes also find common use as the active element in high-power microwave and millimeter-wave oscillators. The design of these circuits closely parallels that of IMPATT-based reflection amplifier.
TL;DR: In this paper, a 34 Watt dual diode pulsed Impatt cavity combiner was developed at 35 GHz with 100 ns pulse width and 100 kHz PRF using two single pulsed Imatt diodes of 16 Watt each.
Abstract: A 34 Watt dual diode pulsed Impatt cavity combiner has been developed at 35 GHz with 100 ns pulse width and 100 kHz PRF using two single pulsed Impatt diodes of 16 Watt each. The total output power of the combiner is slightly greater that the sum of the output powers produced from individual Impatts (as quoted in the catalogue) giving a combining efficiency slightly greater than 100 percent. To achieve this remarkable efficiency, selection of diodes is very critical and a practical technique called ‘delay technique’ was found very useful in selecting suitable diodes for optimisation of the combiner.