Showing papers on "Insulated-gate bipolar transistor published in 1992"

Novel zero-voltage-transition PWM converters

Abstract: A class of zero voltage transition (ZVT) power converters is proposed in which both the transistor and the rectifier operate with zero voltage switching and are subjected to minimum voltage and current stresses. The boost ZVT-PWM converter is used as an example to illustrate the operation of these converters. A 300 kHz, 600 W ZVT-PWM boost, DC-DC converter, and a 100 kHz, 600 W power factor correction circuit using the ZVT-PWM technique and an insulated gate bipolar transistor (IGBT) device were breadboarded to show the operation of the proposed converters. It is shown that the circuit technology greatly improves the converter performance in terms of efficiency, switching noise, and circuit reliability. >

A dynamic electro-thermal model for the IGBT

Abstract: A physics-based dynamic electrothermal model is developed for the IGBT by coupling a temperature-dependent IGBT electrical model with dynamic thermal models for the IGBT silicon chip, packages, and heatsinks. The temperature-dependent IGBT electrical model describes the instantaneous electrical behavior in terms of the instantaneous temperature of the IGBT silicon chip surface. The instantaneous power dissipated in the IGBT is calculated using the electrical model and determines the instantaneous rate that heat is applied to the surface of the silicon chip thermal model. The thermal models determine the evolution of the temperature distribution within the thermal network and thus determine the instantaneous value of the silicon chip surface temperature used by the electrical model. The IGBT electrothermal model is implemented in the Saber circuit simulator and is connected to external circuits in the same way as the previously presented Saber IGBT model, except that it has an additional thermal terminal that is connected to the thermal network component models for the silicon chip, package, and heatsink. The IGBT dynamic electrothermal model and the thermal network component models are verified for the range of temperature and power dissipation levels (heating rates) that are important for power electronic systems. >

Gate drive considerations for IGBT modules

Abstract: The switching performance of an insulated gate bipolar transistor (IGBT) module depends on the drive circuit characteristics and external DC loop inductance. The authors discuss the influence of these parameters on switching losses, diode recovery, switching voltage transients, short-circuit operation, and d nu /dt induced current. The present work is tutorial and identifies trends. It is intended to help the circuit designer to apply the IGBT module to best advantage. >

Static and dynamic behavior of paralleled IGBTs

Abstract: Problems associated with power device characteristics when power devices are connected in parallel, such as thermal stability and balanced switching behavior, can be solved by using insulated gate bipolar transistors (IGBTs). The author deals with parallel IGBT behaviors analyzing both static and dynamic characteristics. The influence of heatsink mounting, layout, and drive circuit are described in order to demonstrate the best way to make IGBTs parallel for optimum performance. In addition, the major advantages of the ISOTOP package are shown. >

Soft-switched high-frequency, high power DC/AC converter with IGBT

Abstract: A 20 kVA direct DC/LFAC dual active bridge (DAB) power converter projected for operation at 100 kHz with insulated gate bipolar transistor (IGBT) switches is presented. It has dual-angle, constant-frequency phase shift control, and is soft switched in a large part of the output V-I plane. It also has a high performance digital control system. The topology and its properties are presented. The control strategy and regulation of the loop are examined. Experimental results are shown for both a small-scale model and a full-scale converter. >

Power transistor driver circuit with current sensing and current overprotection and method for protecting power transistor from overcurrent

Abstract: A circuit and method for driving a power transistor device. The circuit for driving a power transistor device has a driver having an input and an output, the output coupled to a control input of the power transistor device and the input coupled to a primary control voltage source for driving the power transistor device. A current sensing device is coupled to the power transistor device for providing a signal proportional to the current in the power transistor device. An amplifier is coupled to the current sensing device for providing a substantially linear control signal proportional to the current in the power transistor device, the linear control signal being provided to the input of the driver as a secondary drive signal for driving the power transistor device when a current level in the power transistor device greater than a threshold level is detected. A detector is provided for detecting when the current in the power transistor device is greater than the threshold level. The detector is coupled to the current sensing device and to a reference level source, and provides an overcurrent signal to the driver for switching the driver from being driven by the primary control voltage source to the secondary drive signal. The secondary drive signal drives the driver so as to reduce the current level in the power transistor device. The driven power transistor device is preferably a power MOSFET or IGBT.

A 2000 V non-punchthrough IGBT with high ruggedness

Abstract: The inherently great ruggedness of a 2000 V non-punchthrough IGBT is demonstrated by operating the device under short-circuit conditions up to 1800 V and nearly 600 A cm −2 . Even switching an inductive load without using a freewheeling diode at a current density of 350 A cm −2 is not destructive for the device. An explanation for the principally greater ruggedness of the non-punchthrough device (in comparison with the punchthrough IGBT) is given by a 1-D computer simulation, which leads to a fundamental understanding of the physics of the device.

High voltage, high current switching apparatus

Abstract: A high voltage, high current DC switch is shown having a single pole, double throw relay and a solid state power switch such as an IGBT or MOSFET transistor. Voltage is switched by means of the solid state switch while steady state current is conducted through the relay load contact. Several different protector devices are used in the event of circuit malfunction including a combination of thermal and current fuses and resettable thermostats.

An optimum drive and clamp circuit design with controlled switching for a snubberless PWM-VSI-IGBT inverter leg

Abstract: A drive circuit for an insulated gate bipolar transistor (IGBT) with overcurrent protection and controlled switching has been optimized together with a normal passive clamp in an effort to achieve a robust and reliable snubberless inverter leg. Expressions for the design of the snubberless concept including drive circuit and clamp are given. Measurements show a good agreement with the design expressions. A short-circuit test at different operating temperatures is also performed as well as multiple short-circuits. It is concluded that the drive circuit and the nonactive clamp are a reliable and cheap solution for protecting the inverter leg. >

Short circuit behaviour of IGBTs correlated to the intrinsic device structure and on the application circuit

Abstract: Problems associated with the short circuit tolerance of power control circuits can be solved successfully using IGBTs as power switches even when the intrinsic short circuit performance of these devices is modest. The protection circuit of an IGBT with modest short circuit capability is more critical then the protection circuit of a rugged IGBT. On the other hand, IGBTs with the best short circuit performance have the higher operating losses due to their higher saturation voltage. This note demonstrates how the IGBTs and the protection circuit were optimized to get the best trade-off between efficiency, ruggedness, and reliability of the application. >

Simulating the dynamic electro-thermal behavior of power electronic circuits and systems

Abstract: A methodology is presented for simulating the dynamic electrothermal behavior of power electronic circuits and systems. In the approach described, the simulator simultaneously solves for the temperature distribution within the semiconductor devices, packages, and heat sinks (thermal network) along with the currents and voltages within the electrical network. The thermal network is then coupled to the electrical network through the electrothermal models for the semiconductor devices. >

A study of IGBT turn-off behavior and switching losses for zero-voltage and zero-current switching

Abstract: The switching losses of insulated gate bipolar transistors (IGBTs) with zero voltage and zero current switching are compared with the switching losses of IGBTs with hard switching. The turn-off behavior of the IGBT is studied in detail for both zero voltage and zero current switching. The effect of a reverse current during turn-off is also investigated for zero current switching. >

A new synchronous rectifier using bipolar transistor driven by current transformer

Abstract: A new synchronous rectifier (SR) unit is proposed. SR has low offset voltage, which improves the efficiency oflow-voltage power supplies. The SR consists of a bipolar junction transistor (BJT) with a low on-resistance and a current transformer (CT). It is turned on by the free-wheeling current due to positive feedback through the CT. This unit needs no extra drive-circuit for BJT. Analysis and practical design considerations for the SR are presented. The lower offset voltage and higher conversion efficiency are obtained experimentally, and the proposed SR is compared with the case of Schottky diode for a 2 V power supply. >

ESD protection for inputs requiring operation beyond supply voltages

Abstract: A circuit utilizable for protecting an integrated circuit feature from electrostatic discharge is disclosed. A first bipolar transistor has its emitter connected to the IC feature and its collector connected to ground. A second bipolar transistor has its emitter connected to the IC feature and its collector connected to its base and to the base of the first bipolar transistor. A field effect transistor has its gate and drain connected to the IC feature and its body connected to its source and to the collector and base of the second bipolar transistor and to the base of the first bipolar transistor. A diode has its cathode connected to the body and the source of the field effect transistor and to the collector and base of the second bipolar transistor and to the base of the first bipolar transistor.

Insulated gate thyristor with gate turn on and turn off

Abstract: An insulated gate thyristor (IGTH) (40,80) that is built on IGBT technology rather than SCR or thyristor technology. The device provides the low on-resistance of a thyristor with the gate turn-on and turn-off capability of an IGBT. The device may be fabricated in a somewhat modified IGBT process, in a cellular (40) or stripe (80) configuration. First the process is modified (by reduced doping) in order to promote (rather than inhibit) latch-up. Second, certain regions (52) are formed without source diffusions to create a lateral MOSFET (T5) that can turn off the latched IGBT.

Three level IGBT inverter

Abstract: To extend the application of insulated gate bipolar transistor (IGBT) inverters in motor drives to higher voltages, a three-level IGBT inverter has been developed. The power circuit realized and a pulse pattern generator with space voltage modulation are described. A method to control the middle point potential is suggested. The three-level IGBT inverter can be applied to industrial drives with a three-phase supply voltage of 660 V and drives for local traffic with DC line voltage of 600-750 V. >

Temperature dependence of DC currents in HBT

Abstract: A DC thermal-electrical heterojunction bipolar transistor (HBT) model is presented. Only three parameters were needed to simulate completely an HBT with the self-heating effect. It can be very easily implemented in any CAD software which uses the SPICE bipolar junction transistor model. Parameter extraction has been carried out on measured data and good fits were obtained over a wide temperature range. This model can be used to design high-power heterojunction bipolar transistors and circuits with analysis of their thermal effects. >

Overcurrent protector for power element

Abstract: A circuit for providing an overcurrent protection for a power element, such as an IGBT, MOSFET or bipolar transistor, which is inserted between the power supply and a load, the protection circuit comprising a control circuit that provides an input to a gate amplifier at the power element gate. The gate amplifier comprises a photodiode that is connected between the amplifier power supply and the power element gate. The photodiode provides a clamp of the gate voltage in the event of an overcurrent and communicates optically with a phototransistor to provide a detection signal that can modify the control circuit operation. Specifically, the detection circuit can modify the input to the control circuit or control the output of the control circuit so that the energization of the power element is stopped or limited. The control can be through Darlington-connected transistors at the output of the phototransistor.

Fluid-cooled power transistor device, e.g. IGBT, MOSFET or BIMOS for controlling machine

Abstract: The device has the semiconductor element (1) mounted on an insulating substrate board (9) via a metal electrode (7). The opposite side of the semiconductor element and/or the substrate board lie in direct thermal contact with the forced cooling flow fed through a cooling channel (13).The substrate board also supports the control and protection circuit for the semiconductor element with the substrate board and/or the semiconductor element acting as part of the wall of the cooling channel and pref. having a microstructure which reduces the boundary layer thickness of the coolant flow.

Theoretical and experimental characteristics of the base resistance controlled thyristor (BRT)

Abstract: Described are the characteristics of a new MOS gated thyristor structure called the base resistance controlled thyristor (BRT), in which the turn-off of a thyristor built with an N drift region is achieved by reducing the resistance of the p-base region under MOS gate control. A p-channel MOSFET used to achieve turn-off is formed in the N drift region. The device is designed so that, when the p-channel MOSFET is switched on, holes are diverted from the p-base region of the thyristor into the adjacent p/sup +/ region, raising the holding current of the thyristor above the operating current level, and turning off the thyristor. Results of extensive 2-D numerical simulations that have been performed to demonstrate operation of this new device concept are discussed. Experimental results on 600-V devices fabricated with an IGBT process have corroborated theoretical predictions. Current densities above 900 A/cm/sup 2/ have been turned off at room temperature with a gate bias of -10 V. >

4 W, 7-12 GHz, compact CB HBT MMIC power amplifier

Abstract: Extremely compact, broadband, heterojunction bipolar transistor (HBT) power amplifiers (PAs) were demonstrated with excellent performance Common base (CB) HBTs were used in three single-stage broadband power amplifier designs, 1 W, 2 W, and 4 W, covering 7 to 11 GHz In addition, a 1-W common emitter (CE) HBT linear amplifier was studied for its intermodulation property for communication application The CB HBT PAs show good scaling relation in output power level The peak power added efficiency is 40% for both the 1-W and 2-W versions, and 34% for the 4-W version The chip size is only 215 mm by 29 mm for the 4-W CB HBT power amplifier The CE HBT PA provides 1-W saturated output power in class B operation In class A linear operation, 04-W output power was achieved A two-tone test showed that IM/sub 3/ is better than -20 dBc at 1-dB compression point >

Conductivity-modulating mosfet

Abstract: When bypassing a high voltage surge by externally installing a diode between a collector and a gate and protecting a circuit by turning on an IGBT, it is difficult to select a withstand voltage of the diode, because the withstand voltage of the IGBT must be higher with a certain margin. In the present invention, regions of an inverse conductivity type are formed in a high resistivity layer of an IGBT as in base region, and a transistor is formed together with a collector layer of an inverse conductivity type, which is connected between the collectors of an IGBT to be utilized as a clamping transistor. The breakdown voltage of this transistor is made lower than the breakdown voltage of a bipolar transistor of the IGBT main body. Then when the transistor breaks down, the gate-emitter capacity of the IGBT is charged and the IGBT is turned on, thus absorbing the high energy produced by an abnormal voltage into the chip and increasing the withstand capacity.

Semiconductor switching device with reduced switching loss

Abstract: A semiconductor switching device including a first IGBT and a second IGBT connected in parallel The first IGBT has a low saturation voltage and a long fall time, whereas the second IGBT has a high saturation voltage and a short fall time. An input resistor is connected to the gate of the second IGBT, and a common drive signal is applied to a gate of the first IGBT, and to a gate of the second IGBT through the input resistor. The cutoff of the second IGBT is delayed when the first and second IGBTs are driven by the common drive signal so that the semiconductor switching device is turned off in the short fall time of the second IGBT. The switching speed is increased and the switching loss is decreased. Only a single drive circuit is enough for driving the device, enabling the miniaturization and low cost of the driving circuit.

Insulated gate bipolar transistor having high breakdown voltage

Abstract: An insulated gate bipolar transistor having a low on-voltage and a low turn-off time is provided. P-type anode layer having a low impurity concentration, preferably 1×1016 to 1×101 7/cm3, is provided on an N-type drain layer that includes a pair of P-type base regions each having an N+ -type source region. A plurality of P+ -type anode regions are formed in the P-type anode layer.

Nonlinear effects in transistors caused by thermal power feedback: simulation and modeling in SPICE

Abstract: In order to evaluate the influence of the internal power dependent thermally effected feedback in bipolar transistors, a model for SPICE simulation is proposed which considers several variable temperature influences on transistor parameters as well as a complex thermal network. Measurement methods for determination of essential parameter values are suggested. Results of SPICE simulations are presented. >

Driver circuit for sinking current to two supply voltages

Abstract: An insulated gate bipolar transistor (IGBT) gate driver circuit with a push-pull output stage which provides current sinking to two power supply rails. Current sinking to a low impedance power supply rail (GND) via a high current NPN bipolar transistor provides fast IGBT turn off. A PNP bipolar transistor forward biased emitter-base junction in series with an N channel field effect transistor provides current-limited current sinking to a higher impedance power supply rail (VEE). The on resistance of the N channel field effect transistor can be chosen to set the maximum current drawn from the higher impedance VEE power supply rail. This current-limiting avoids the need for a second low impedance power supply. The transition of the output of the driver from ground to VEE is only a function of the output voltage output by the driver. It is not a function of any timed switching of transistors.

Protective apparatus for power transistor

Abstract: A protective apparatus for a power transistor which detects an abnormal temperature of a power transistor and cuts a load to the power transistor to prevent possible breakdown of the power transistor. The protective apparatus comprises detecting means which detects a junction temperature of the power transistor on the real time basis from a base-emitter voltage of the power transistor. When the junction temperature of the power transistor is excessively high, a protective circuit produces an output signal, and a muting circuit applies muting to an input signal to or a current flow through the power transistor.

Bipolar technology for 0.5-micron-wide base transistor with an ECL gate delay of 21.5 picoseconds

Abstract: This paper presents a high speed Si bipolar transistor using polysilicon sidewall base-electrode transistor (POSET) technology developed from self-aligned silicon bipolar transistor technology We reduced the parasitic capacitance between the base and the collector to a minimum to maximize the transistor's speed Other techniques were used to make a practical device with a gate delay time of 215 ps/gate at a switching current of 032 mA This is faster than any commercial bipolar transistor at a switching current about one third >

Performance evaluations of single-ended quasi-load resonant inverter incorporating advanced-2nd generation IGBT for soft switching

Abstract: The authors present an efficient single-ended high-frequency induction heating quasi-resonant inverter circuit using a single advanced second generation insulated gate bipolar transistor (IGBT) for soft switching and its specially designed driver IC, which operates in a zero voltage soft switching (ZVS) mode under a PFM-based power regulation strategy. The generic voltage-fed and current-fed circuit versions of single-ended resonant inverters for home power electronics appliances are systematically proposed and classified on the basis of the soft switched PFM mode inverter family. The advanced IGBT designed for the application specific soft switching and its driver IC are demonstrated as a novel induction heating rice cooker including cooking vessel and evaluated from an experimental point of view. These new technologies are especially developed for a quasi-resonant ZVS high-frequency inverter with working coil-linked induction heating loads. >

Evolution and status of smart power technology

Abstract: The progress made in power semiconductor technology that led to the evolution of smart power integrated circuits is reviewed. The displacement of bipolar power transistors by power MOSFETs and insulated-gate bipolar transistors (IGBTs) has been a crucial element that is having a strong impact upon power electronic applications. Trends in technological developments and approaches under investigation to create the next generation of power switching devices are examined. Examples of smart power chips under development around the world highlight the emphasis being given to this area by the semiconductor industry. >