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Showing papers on "Ion beam deposition published in 1972"


Journal ArticleDOI
TL;DR: An electrohydrodynamic ion source has been constructed and attached to a high resolution mass spectrometer as mentioned in this paper, which ionization process is based on the interaction of a conducting liquid surface and an intense electrostatic field.
Abstract: An electrohydrodynamic ion source has been constructed and attached to a high resolution mass spectrometer This ionization process is based on the interaction of a conducting liquid surface and an intense electrostatic field An ion source operating on Ga–In eutectic alloy has produced in excess of 30 μA of ion current The mass spectra obtained from the Ga–In source provided conclusive proof of the production of singly charged, monatomic ions In addition the ion source ionized five impurities dissolved in the liquid eutectic

69 citations


PatentDOI
TL;DR: In this article, a duoplasmatron ion source is modified to provide a large plasma surface with a uniform density at a target cathode, and the acceleration and deceleration electrodes are spaced in close proximity each to the others with the apertures being in alignment.
Abstract: A duoplasmatron ion source is modified to provide a large plasma surface with a uniform density at a target cathode. The target cathode and the acceleration and deceleration electrodes are gridded or multi-apertured and are spaced in close proximity each to the others with the apertures being in alignment. With such an arrangement, it is possible to extract multi-ampere bright ion beams at energies of tens of KeV. Conversion of the ion beam to a neutral particle beam can be readily accomplished by addition of a gas cell.

56 citations


Journal ArticleDOI
TL;DR: In this article, a UHV system, containing a heatable (up to >2600°K) W ribbon target, a Finkelstein ion source (Ar+, 2'keV) with magnetic mass separator, an electron source (300'eV), a quadrupole secondary ion mass filter with a counting channel electron multiplier and a quad-rupole gas analyzer, is used for the study of the adsorption and desorption of H2, O2, and CO on W by simultaneous, i.e., fast interchanging
Abstract: A UHV system, containing a heatable (up to >2600 °K) W ribbon target, a Finkelstein ion source (Ar+, 2 keV) with magnetic mass separator, an electron source (300 eV), a quadrupole secondary ion mass filter with a counting channel electron multiplier and a quadrupole gas analyzer, is used for the study of the adsorption and desorption of H2, O2, and CO on W by simultaneous, i.e., fast interchanging “static” SIMS [secondary (ion induced) ion mass spectroscopy] and EID [electron induced (ion) desorption] and by flash-filament measurements. Different binding states can be distinguished. The emission cross sections of the adsorbate-specific ions by ion bombardment depend far less upon the gas exposure (and therefore upon the coverage) than those corresponding to electron bombardment.

40 citations


Journal ArticleDOI
TL;DR: In this paper, the technique of ion beam sputtering is described and compared with r.f. sputtering, and the advantage of high vacuum during sputtering deposition is important for the deposition of semiconductors and the investigation of film growth by means of in situ observations in the electron microscope.

37 citations



Journal ArticleDOI
TL;DR: In this paper, a circular strip waveguide is constructed by ion implantation of fused silica through a mask made by electron-beam exposure of polymethylmethacrylate (PMMA) and guidance of 0.6328μm light from a He-Ne laser through the guide is demonstrated.
Abstract: Fabrication of a circular strip waveguide by ion implantation of fused silica through a mask made by electron‐beam exposure of polymethylmethacrylate (PMMA) is described. This technique has an advantage in its simplicity and the small number of processing steps involved. Guidance of 0.6328‐μm light from a He–Ne laser through the guide is demonstrated.

28 citations


Journal ArticleDOI
TL;DR: In this article, a model invoking neutralization of the incident ion beam at the surface, followed by impurity ion transport to the interface under the influence of the field building up across the SiO2 film during bombardment has been constructed to explain the experimental data.
Abstract: Evidence has been presented for the presence of mobile ions in ion bombarded SiO2, these ions being possibly protons or sodium ions. A model invoking neutralization of the incident ion beam at the surface, followed by impurity ion transport to the interface under the influence of the field building up across the SiO2 film during bombardment has been constructed to explain the experimental data.

27 citations


Journal ArticleDOI
TL;DR: In this article, a microwave ion source with a hydrogen ion beam up to 0.5 keV was presented, where the beam is 85% molecular ions, of which either the diatomic or triatomic component can be maximized by an adjustment of the gas fed to a discharge region.
Abstract: A newly designed microwave ion source has produced with a hydrogen ion beam up to 0.5 A steady state operation with ion energy of 1 keV. The 4 cm diam extraction electrodes are multiple apertures and are arranged in an accel‐decel arrangement. Maximum divergence is 2° from the beam axis. The beam is 85% molecular ions, of which either the diatomic or triatomic component can be maximized by an adjustment of the gas fed to a discharge region. The source is technologically simple, inexpensive, and long lived. The basic concepts underlying the production of ion beams are described.

26 citations


Journal ArticleDOI
TL;DR: In this paper, cross section functions for multiply charged ions are obtained for electron energies between threshold and 500 eV, not being absolute, are normalized against data obtained by crossed-beam techniques, which are used with + or 30% confidence for which only the singly charged ion crossed beam data are available.
Abstract: Introduction of a molecular beam into a hollow cylindrical electron beam generated by a toroidal cathode produces positive ions which oscillate radially for periods of the order of a second: they are ionized by bombardment with an axial beam of electrons of variable energy; ions of different charge states are extracted axially through an orifice into a quadrupole mass-spectrometer and channeltron detector. In this way cross section functions for ionization of multiply charged ions are obtained for electron energies between threshold and 500 eV. The cross sections, not being absolute, are normalized against data obtained by crossed-beam techniques. The normalization factors which are governed by the ion trapping time, are independent of the energy of the axial beam but may depend on the residual gas pressure. They are used with +or-30% confidence for multiply charged ion cross section functions for which only the singly charged ion crossed beam data are available.

21 citations


Journal Article
TL;DR: In this paper, a microwave ion source with a hydrogen ion beam up to 0.5 keV was presented, where the beam is 85% molecular ions, of which either the diatomic or triatomic component can be maximized by an adjustment of the gas fed to a discharge region.
Abstract: A newly designed microwave ion source has produced with a hydrogen ion beam up to 0.5 A steady state operation with ion energy of 1 keV. The 4 cm diam extraction electrodes are multiple apertures and are arranged in an accel‐decel arrangement. Maximum divergence is 2° from the beam axis. The beam is 85% molecular ions, of which either the diatomic or triatomic component can be maximized by an adjustment of the gas fed to a discharge region. The source is technologically simple, inexpensive, and long lived. The basic concepts underlying the production of ion beams are described.

21 citations


Journal ArticleDOI
TL;DR: Ion beam deposited Cr thin films have been found to be superconducting at temperatures of up to 1.52 K as mentioned in this paper, and transition temperatures were dependent on the ion specie used for film deposition with lower T c's obtained for smaller atomic radius gases.

Journal ArticleDOI
TL;DR: In this paper, an electrostatic ion source for sputter-ion etching of metallic and non-metallic specimens for electron microscopy is described, and a number of optical and scanning electron micrographs of etched surfaces obtained with this source are given.
Abstract: This electrostatic ion source operates as a cold cathode device. It produces a beam of energetic positive ions of, for example, 100 μA/cm2 at a pressure of 5×10−4 Torr when operated at an anode potential of 10 kV. The ion beam is reasonably well collimated and the ions have a broad energy spectrum. It is therefore most suitable for sputter-ion etching of metallic and nonmetallic specimens for electron microscopy. It is relatively simple to construct and entirely reliable in operation. A number of optical and scanning electron micrographs of etched surfaces obtained with this source are given.

Journal ArticleDOI
TL;DR: The mass spectrum of secondary ions emitted from a solid surface under ion bombardment is characteristic of the composition of the superficial monolayers. as mentioned in this paper used very low primary ion current densities and highly sensitive detection techniques.
Abstract: The mass spectrum of secondary ions emitted from a solid surface under ion bombardment is characteristic of the composition of the superficial monolayers. By the use of very low primary ion current densities and highly sensitive detection techniques, analysis can be performed without measurable disturbance of the original first monolayers. Some results demonstrating the capabilities of this ‘static’ method of secondary ion mass spectrometry (SIMS) are presented.

Journal ArticleDOI
TL;DR: A survey on questions related to the production of multiply charged ions with the Duoplasmatron ion source is given in this article, in spite of differences of the multiply charged ion source and the mass separator type, design considerations show that high containment is a common feature to be attained in both subjects.
Abstract: A survey on questions related to the production of multiply charged ions with the Duoplasmatron ion source is given In spite of differences of the multiply charged ion source and the mass separator type, design considerations show that high containment is a common feature to be attained in both subjects Multiply charged metal ions are produced by material evaporation into the magnetically confined anodic plasma and auxiliary gas feed into the cathode discharge regions Energy spreads of ion beams from the low and the high arc current source are compared The Duoplasmatron ion source proves to be a hygieneous source of high containment that permits the production of medium charge states up to 9+ for xenon at modest energy spread and good brilliance of the extracted ion beam in a high current-low voltage discharge mode




Journal ArticleDOI
Yoshio Ueda1, Jun Okano1
TL;DR: In this paper, a sputtering mass spectrometer with a cesium primary ion source was constructed and two types of surface ionization ion source were made and their characteristics were studied.
Abstract: A sputtering mass spectrometer with a cesium primary ion source was constructed. Two types of the surface ionization ion source for producing the cesium ion beam were made and their characteristics were studied. The second type of the source, which had two filaments in the ionization chamber, proved to have the superior performances. The beam current of 0.5-2.0×10-7 A was obtained for more than 50 hours. The diameter of the beam on the surface of the target was about 0.45mm.By using cesium ions as the primaries, the charge up effect due to the ion bombardment of insulating materials was much reduced, and the stability of the secondary ion current was enough for accurate analysis. Results of the preliminary measurements for the isotopic abundance ratio of lithium in the potassium alum crystal were described. The possibility of the high sensitive analysis of negative secondary ions was pointed out.

Journal ArticleDOI
TL;DR: In this paper, single crystal silicon samples of various boron concentrations were studied using an ion microprobe using Argon and oxygen ion beams for the scanning and the determination of the BORON profiles.
Abstract: Single crystal silicon samples of various boron concentrations are studied using an ion microprobe. Argon and oxygen ion beams are used for the scanning and the determination of the boron profiles. Erosion rates are discussed.


Journal ArticleDOI
TL;DR: In this article, it was shown that secondary electrons are responsible for the ionization observed at a primary electron beam energy of 70 eV at an ICR mass spectrometer.
Abstract: Experiments on negative ion production by the electron capture process in an ion cyclotron resonance (ICR) mass spectrometer indicate that secondary electrons are responsible for the ionization observed at a primary electron beam energy of 70 eV.


Journal ArticleDOI
TL;DR: In this paper, the ion source described in this contribution allows the production of considerable ion beam intensities of highly charged ions, and the electron density is increased by an additional electron gun.
Abstract: The ion source described in this contribution allows the production of considerable ion beam intensities of highly charged ions. The electron density is increased by an additional electron gun. The decrease-of the ratio of neighbouring charge states is similar to the decrease of the ratio of the ionization cross sections by electron impact from which one event ionization processes are assumed to be of major importance in the performance of this source.

Journal ArticleDOI
TL;DR: In this article, the design and preparation of a Blewett-Jones type lithium ion source is described and measurements of ion current, lifetime, ion energy distribution, and beam emittance are discussed.

Journal ArticleDOI
TL;DR: In this paper, the ion beam current monitor is used for continuous monitoring of MeV ion currents of 0.1 to 10 nA, particularly suited to ion channelling and similar experiments.

Journal ArticleDOI
TL;DR: In this paper, a surface ionization type ion source was developed specifically for use in collision experiments, which produces a Ba+ ion beam of known chemical purity and excitation state, and can be operated without differential pumping in a vacuum environment of (3 −4 −10−9 Torr).
Abstract: A surface ionization type ion source, which produces a Ba+ ion beam of known chemical purity and excitation state, has been developed specifically for use in collision experiments. Barium vapor is surface ionized on a rhenium filament that is heated to approximately 1800°C by the passage of a direct current. The water cooled source provides ion currents of about 10 μA, and can be operated without differential pumping in a vacuum environment of (3–4)×10−9 Torr.

Journal ArticleDOI
TL;DR: In the measurements of spatial evolutions of ion beams in an ion beam-plasma system, the slowing-down of the ion-beam velocity and the thermalization of the ions have been observed as mentioned in this paper.

Journal ArticleDOI
TL;DR: Ion beam systems and their component parts used for analysis of solid surfaces are reviewed in this article, where the energy range under consideration for the primary beam system is of the order of a few keV to several hundred keV with ion currents up to 1 mA.
Abstract: Ion beam systems and their component parts used for analysis of solid surfaces are reviewed. The energy range under consideration for the primary beam system is of the order of a few keV to several hundred keV with ion currents up to 1 mA. Ion production, acceleration and focusing, analysis, beam handling and detection facilities are discussed together with some examples of complete systems.

Journal ArticleDOI
01 Nov 1972-Vacuum
TL;DR: In this article, a small ion beam system was designed for experimental work in the energy range up to 30 keV. After a description of the system some details of experimental work on blocking, sputtering and backscattering ion energy spectra are given.