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A. Toriumi
Researcher at Toshiba
Publications - 5
Citations - 2321
A. Toriumi is an academic researcher from Toshiba. The author has contributed to research in topics: Electron mobility & MOSFET. The author has an hindex of 5, co-authored 5 publications receiving 2212 citations.
Papers
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Journal ArticleDOI
On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
TL;DR: In this paper, the inversion layer mobility in n-and p-channel Si MOSFETs with a wide range of substrate impurity concentrations (10/sup 15/ to 10/sup 18/ cm/sup -3/) was examined.
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On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation
TL;DR: In this paper, the inversion layer mobilities in n-channel MOSFET's fabricated on Si wafers with three surface orientations were investigated from the viewpoint of the universal relationship against the effective field.
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Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology
TL;DR: In this article, a SiGe-on-insulator (strained-SOI) structure fabricated by separation-by-implanted-oxygen (SIMOX) technology is presented, and electron and hole mobility characteristics have been experimentally studied and compared to those of control SOI MOSFET's.
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Experimental evidence of inelastic tunneling in stress-induced leakage current
TL;DR: In this article, a new experimental technique was proposed to study the transport properties of stress-induced leakage current (SILC), based on the carrier separation measurement for p-channel MOSFETs, the quantum yield of impact ionization for electrons involved in the SILC process was evaluated directly from the change in the source and gate currents of p-MOSFets before and after stressing.
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Quantitative understanding of inversion-layer capacitance in Si MOSFET's
Shinichi Takagi,A. Toriumi +1 more
TL;DR: In this paper, the inversion-layer capacitance in n-channel Si MOSFETs is studied experimentally and theoretically with emphasis on the surface carrier concentration (N/sub s/) dependence of C/sub inv/, which is important in the quantitative description of the capacitance.