Journal ArticleDOI
Quantitative understanding of inversion-layer capacitance in Si MOSFET's
Shinichi Takagi,A. Toriumi +1 more
TLDR
In this paper, the inversion-layer capacitance in n-channel Si MOSFETs is studied experimentally and theoretically with emphasis on the surface carrier concentration (N/sub s/) dependence of C/sub inv/, which is important in the quantitative description of the capacitance.Abstract:
The inversion-layer capacitance (C/sub inv/) in n-channel Si MOSFET's is studied experimentally and theoretically with emphasis on the surface carrier concentration (N/sub s/) dependence of C/sub inv/, which is important in the quantitative description of the inversion-layer capacitance Based on the experimental N/sub s/ and temperature dependencies, the physical origin of C/sub inv/ is discussed It is shown that, at lower N/sub s/, C/sub inv/ is determined by the finite effective density of states, while, at higher N/sub s/ C/sub inv/ is determined quantum mechanically by the finite inversion-layer thickness Also, the results of the surface orientation dependence of C/sub inv/ are presented as the first direct evidence for the fact that surface quantization plays a significant role in C/sub inv/ even at room temperature The self-consistent Poisson-Schrodinger calculation of C/sub inv/ is performed and found to represent the experimental results accurately The influence of C/sub inv/ on the gate capacitance is discussed in terms of the device scaling on basis of the experimental and calculated values of C/sub inv/read more
Citations
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Journal ArticleDOI
Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance
Shinichi Takagi,T. Iisawa,Tsutomu Tezuka,T. Numata,Shu Nakaharai,N. Hirashita,Yoshihiko Moriyama,Koji Usuda,Eiji Toyoda,Sanjeewa Dissanayake,Masato Shichijo,Ryosho Nakane,Satoshi Sugahara,Mitsuru Takenaka,Naoharu Sugiyama +14 more
TL;DR: In this article, the authors reviewed the recent approaches in realizing carrier-transport-enhanced CMOS, and the critical issues, fabrication techniques, and device performance of MOSFETs using three types of channel materials, Si (SiGe) with uniaxial strain, Ge-on-insulator (GOI), and III-V semiconductors, are presented.
Journal ArticleDOI
Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels
TL;DR: In this paper, a quasianalytical modeling approach for graphene metal-oxide-semiconductor field effect transistors (MOSFETs) with gapless large-area graphene channels is presented.
Journal ArticleDOI
Device structures and carrier transport properties of advanced CMOS using high mobility channels
Shinichi Takagi,Shinichi Takagi,Tsutomu Tezuka,Toshifumi Irisawa,Shu Nakaharai,Toshinori Numata,Koji Usuda,Naoharu Sugiyama,Masato Shichijo,Ryosho Nakane,Satoshi Sugahara +10 more
TL;DR: In this paper, a review of the recent mobility enhancement technologies including application of strain and new channel materials such as SiGe, Ge and III-V materials are reviewed. And the results on MOSFETs using these three types of the technologies with an emphasis on the global strained Si/Si/SiGe/Ge substrates and the combination with the local techniques are presented.
Journal ArticleDOI
Analysis and Design of an Ultralow-Power CMOS Relaxation Oscillator
TL;DR: The application field for this oscillator is the clock generation of low-power wake-up functions for battery-operated systems and a detailed analysis of the oscillator, including the temperature performance, is derived and verified with experimental results.
Journal ArticleDOI
Scaled silicon MOSFETs: degradation of the total gate capacitance
TL;DR: In this paper, the influence of image and exchange-correlation effects on the inversion layer and total gate capacitance in scaled Si MOSFETs was studied using a fully quantum-mechanical model.
References
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Journal ArticleDOI
Self-Consistent Results for n -Type Si Inversion Layers
TL;DR: In this article, self-consistent results for energy levels, populations, and charge distributions are given for $n$-type inversion layers on $p$ -type silicon.
Journal ArticleDOI
Inversion-layer capacitance and mobility of very thin gate-Oxide MOSFET's
TL;DR: Inversion-layer capacitance has been experimentally characterized and identified to be the main cause of the second-order thickness-dependence of MOSFET characteristics as discussed by the authors, and empirical equations for inversion layer capacitance and mobilities versus electric field are proposed.
Journal ArticleDOI
Transconductance degradation in thin-Oxide MOSFET's
Giorgio Baccarani,M.R. Wordeman +1 more
TL;DR: In this paper, the authors investigated the transconductance degradation effect of thin-oxide FET's due to the finite inversion-layer capacitance and the decrease of electron mobility as the electric field increases.
Journal ArticleDOI
Determination of the inversion-layer thickness from capacitance measurements of metal-oxide-semiconductor field-effect transistors with ultrathin oxide layers.
A. Hartstein,N. F. Albert +1 more
TL;DR: The capacitance of ultrathin-oxide large-area square metal-oxide-semiconductor field-effect-transistor devices has been measured at temperatures ranging from 4.2 to 300 K and for a wide range of gate voltages and substrate voltages to determine the spatial extent of the lowest-lying inversion-layer subband wave function from the interface.
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