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A. V. Vairagar
Researcher at Nanyang Technological University
Publications - 22
Citations - 482
A. V. Vairagar is an academic researcher from Nanyang Technological University. The author has contributed to research in topics: Electromigration & Copper interconnect. The author has an hindex of 12, co-authored 22 publications receiving 466 citations. Previous affiliations of A. V. Vairagar include Agency for Science, Technology and Research & Singapore Science Park.
Papers
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Journal ArticleDOI
In situ observation of electromigration-induced void migration in dual-damascene Cu interconnect structures
A. V. Vairagar,Subodh Mhaisalkar,Ahila Krishnamoorthy,King-Ning Tu,A. M. Gusak,A. M. Gusak,Moritz Andreas Meyer,Ehrenfried Zschech +7 more
TL;DR: In situ electromigration experiments were carried out to study electromigration-induced failure in the upper and lower layers in dual-damascene Cu test structures in this paper, which supported the premise that the Cu∕Si3N4 interface acts as the dominant electromigration path.
Journal ArticleDOI
Electromigration behavior of dual-damascene Cu interconnects––Structure, width, and length dependences
TL;DR: The electromigration median time to failure (MTF) were found to be dependent upon the line width for the lower layer test structures while it remained unaffected in the case of upper layer test structure, and back stress effect on short lines was evident on both upper and lower layer structures.
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Current crowding effect on copper dual damascene via bottom failure for ULSI applications
TL;DR: In this article, the authors performed a finite element analysis on line/via structures in two level Cu dual damascene interconnection system and found that the wide line and via fails earlier than the narrow line and/or via.
Journal ArticleDOI
Direct evidence of electromigration failure mechanism in dual-damascene Cu interconnect tree structures
A. V. Vairagar,Subodh Mhaisalkar,Moritz Andreas Meyer,E. Zschech,Ahila Krishnamoorthy,King-Ning Tu,Andriy Gusak +6 more
TL;DR: In situ secondary electron microscope (SEM) characterizations were carried out to study electromigration failure mechanism in dual-damascene Cu interconnect tree structures, which are important for reliability assessment as well as design optimizations of on-chip interconnects as discussed by the authors.
Journal ArticleDOI
Effect of Cu3Sn coatings on electromigration lifetime improvement of Cu dual-damascene interconnects
M. Y. Yan,J. O. Suh,Fan Ren,King-Ning Tu,A. V. Vairagar,Subodh Mhaisalkar,Ahila Krishnamoorthy +6 more
TL;DR: In this article, a 20 nm thick Cu3Sn intermetallic compound overlayer on interconnect surfaces was found to effectively block dominant surface diffusion paths, thus resulting in close to one order of magnitude improvement in electromigration lifetimes.