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Alex Zunger
Researcher at University of Colorado Boulder
Publications - 838
Citations - 85746
Alex Zunger is an academic researcher from University of Colorado Boulder. The author has contributed to research in topics: Band gap & Electronic structure. The author has an hindex of 128, co-authored 826 publications receiving 78798 citations. Previous affiliations of Alex Zunger include Tel Aviv University & University of Wisconsin-Madison.
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Off-center atomic displacements in zinc-blende semiconductor.
TL;DR: All-electron density functional calculations confirm that a pseudo Jahn-Teller coupling of a chemically active valence [ital d] band with an [ital s]-like conduction band is predicted to lead to such a metastability in CuCl.
Journal Article
Intrinsic circular polarization in centrosymmetric stacks of transition-metal dichalcogenide
TL;DR: It is shown that also for n=even, where inversion symmetry is present and valley polarization physics is strictly absent, such intrinsic selectivity in CP is to be expected on the basis of fundamental spin-orbit physics.
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Electronic structure and density of states of the random Al0.5Ga0.5As, GaAs0.5P0.5, and Ga0.5In0.5As semiconductor alloys
TL;DR: It is shown how the existence of different local environments about chemically identical sites leads to splittings and fine structures in the density of states, and how atomic relaxations are induced by such nonsymmetric environments and lead to significant modifications in these DOS features.
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Pseudopotential calculations of band gaps and band edges of short-period (InAs)n/(GaSb)m superlattices with different substrates, layer orientations, and interfacial bonds
TL;DR: In this paper, Magri and Zunger showed that the band edges and band gaps of superlattices on a GaSb substrate exhibit a nonmonotonic behavior as a function of the InAs barrier thickness when the number of InAs layers exceeds 5$.
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Quantum-size effects on the pressure-induced direct-to-indirect band-gap transition in inp quantum dots
Huaxiang Fu,Alex Zunger +1 more
TL;DR: In this article, the authors predict that the difference in quantum confinement energies of G-like and X-like conduction states in a covalent quantum dot will cause the direct-to-indirect transition to occur at substantially lower pressure than in the bulk material.