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Alex Zunger

Researcher at University of Colorado Boulder

Publications -  838
Citations -  85746

Alex Zunger is an academic researcher from University of Colorado Boulder. The author has contributed to research in topics: Band gap & Electronic structure. The author has an hindex of 128, co-authored 826 publications receiving 78798 citations. Previous affiliations of Alex Zunger include Tel Aviv University & University of Wisconsin-Madison.

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Free‐standing versus AlAs‐embedded GaAs quantum dots, wires, and films: The emergence of a zero‐confinement state

TL;DR: In this paper, a plane-wave pseudopotential method was used to investigate the electronic structure of free standing and embedded GaAs quantum dots, wires, and films, and it was shown that the confinement energy of the valence-band maximum (VBM) is larger in AlAs-embedded than in free standing quantum structures, because of the zero-confinement character of the VBM wave function.
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Understanding electronic peculiarities in tetragonal FeSe as local structural symmetry breaking

TL;DR: In this paper, the symmetry-broken motifs obtained by minimization of the internal energy represent what chemical bonding in the tetragonal phase prefers as intrinsic energy lowering (stabilizing) static distortions.
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Ground-state properties of crystalline silicon in a density-functional pseudopotential approach

Alex Zunger
- 15 May 1980 - 
TL;DR: In this paper, a first-principles nonlocal pseudopotential approach was used to predict ground-state bulk properties of a semiconductor, and the calculated equilibrium lattice constant, total valence energy, and bulk modulus of Si were within 0.2, 0.5, and 5% of the observed values.
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Evolution of the band-gap and band-edge energies of the lattice-matched GaInAsSb∕GaSb and GaInAsSb∕InAs alloys as a function of composition

TL;DR: In this paper, the evolution of the valence-band maximum energy Eυ(x,y) and conduction-band minimum energy Ec(x and y) for a compositionally graded quaternary Ga1−yInyAsxSb1−x alloy lattice matched to GaSb or InAs was predicted.
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Comment on “Intrinsic n -type Behavior in Transparent Conducting Oxides: A Comparative Hybrid-Functional Study of In 2 O 3 , SnO 2 , and ZnO”

TL;DR: A Comment on the Letter by P\'eter \'Agoston et al. as discussed by the authors offers a Reply to the authors of the Letter offer a Reply, as well as a reply of their own.