A
Ali Javey
Researcher at University of California, Berkeley
Publications - 434
Citations - 61394
Ali Javey is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: Carbon nanotube & Silicon. The author has an hindex of 109, co-authored 409 publications receiving 51886 citations. Previous affiliations of Ali Javey include University of California & Old Dominion University.
Papers
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Journal ArticleDOI
Fully integrated wearable sensor arrays for multiplexed in situ perspiration analysis
Wei Gao,Wei Gao,Sam Emaminejad,Sam Emaminejad,Sam Emaminejad,Hnin Yin Yin Nyein,Hnin Yin Yin Nyein,Samyuktha Challa,Kevin Chen,Kevin Chen,Austin J Peck,Hossain M. Fahad,Hossain M. Fahad,Hiroki Ota,Hiroki Ota,Hiroshi Shiraki,Hiroshi Shiraki,Daisuke Kiriya,Daisuke Kiriya,Der Hsien Lien,George A. Brooks,Ronald W. Davis,Ali Javey,Ali Javey +23 more
TL;DR: This work bridges the technological gap between signal transduction, conditioning, processing and wireless transmission in wearable biosensors by merging plastic-based sensors that interface with the skin with silicon integrated circuits consolidated on a flexible circuit board for complex signal processing.
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Ballistic carbon nanotube field-effect transistors
TL;DR: It is shown that contacting semiconducting single-walled nanotubes by palladium, a noble metal with high work function and good wetting interactions with nanotube, greatly reduces or eliminates the barriers for transport through the valence band of nanot tubes.
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High-performance single layered WSe₂ p-FETs with chemically doped contacts.
Hui Fang,Steven Chuang,Steven Chuang,Ting Chia Chang,Kuniharu Takei,Kuniharu Takei,Toshitake Takahashi,Toshitake Takahashi,Ali Javey,Ali Javey +9 more
TL;DR: High performance p-type field-effect transistors based on single layered WSe(2) as the active channel with chemically doped source/drain contacts and high-κ gate dielectrics are reported.
Journal ArticleDOI
Nanowire active-matrix circuitry for low-voltage macroscale artificial skin
Kuniharu Takei,Toshitake Takahashi,Toshitake Takahashi,Johnny C. Ho,Johnny C. Ho,Hyunhyub Ko,Andrew G. Gillies,Paul W. Leu,Paul W. Leu,Ronald S. Fearing,Ali Javey,Ali Javey +11 more
TL;DR: This work presents the largest integration of ordered NW-array active components, and demonstrates a model platform for future integration of nanomaterials for practical applications.
Journal ArticleDOI
High Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
TL;DR: In this paper, high performance p-type field effect transistors based on single layered (thickness, 0.7 nm) WSe2 as the active channel with chemically doped source/drain contacts and high-kappa gate dielectrics were reported.