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Ali Javey
Researcher at University of California, Berkeley
Publications - 434
Citations - 61394
Ali Javey is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: Carbon nanotube & Silicon. The author has an hindex of 109, co-authored 409 publications receiving 51886 citations. Previous affiliations of Ali Javey include University of California & Old Dominion University.
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Journal ArticleDOI
Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous Carbon
Yang Chai,Yi Wu,Kuniharu Takei,Hong-Yu Chen,Shimeng Yu,Philip C.H. Chan,Ali Javey,H.-S. Philip Wong +7 more
TL;DR: In this paper, a carbon-based resistive random access memory device with a carbon nanotube (CNT) electrode is presented, where an amorphous carbon layer is sandwiched between the fast-diffusing top metal electrode and the bottom CNT electrode, exhibiting a bipolar switching behavior.
Journal ArticleDOI
Highly Stable Hysteresis-Free Carbon Nanotube Thin-Film Transistors by Fluorocarbon Polymer Encapsulation
Tae Jun Ha,Tae Jun Ha,Daisuke Kiriya,Daisuke Kiriya,Kevin Chen,Kevin Chen,Ali Javey,Ali Javey +7 more
TL;DR: The fluorocarbon encapsulation technique presents a promising approach for enhanced device reliability, which is critical for future system-level electronics based on CNTs.
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Nanoscale doping of InAs via sulfur monolayers
Johnny C. Ho,Johnny C. Ho,Alexandra C. Ford,Alexandra C. Ford,Yu-Lun Chueh,Yu-Lun Chueh,Paul W. Leu,Paul W. Leu,Onur Ergen,Onur Ergen,Kuniharu Takei,Kuniharu Takei,Gregory C. Smith,Prashant Majhi,Joseph Bennett,Ali Javey,Ali Javey +16 more
TL;DR: In this article, a self-limiting monolayer doping approach was proposed for nanoscale, sulfur doping of planar substrates with high dopant areal dose and uniformity.
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Near-ideal electrical properties of InAs/WSe2 van der Waals heterojunction diodes
TL;DR: In this article, the fabrication and electrical analysis of InAs/WSe2 van der Waals heterojunction diodes formed by the transfer of ultrathin membranes of one material upon another were presented.
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Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density
Kevin Chen,Daisuke Kiriya,Mark Hettick,Mahmut Tosun,Tae-Jun Ha,Surabhi R. Madhvapathy,Sujay B. Desai,Angada B. Sachid,Ali Javey +8 more
TL;DR: In this article, a stable n-doping of WSe2 using thin films of SiNx deposited on the surface via plasma-enhanced chemical vapor deposition is presented, where positive fixed charge centers inside SiNs act to dope thin flakes n-type via field-induced effect.