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Ali Javey

Researcher at University of California, Berkeley

Publications -  434
Citations -  61394

Ali Javey is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: Carbon nanotube & Silicon. The author has an hindex of 109, co-authored 409 publications receiving 51886 citations. Previous affiliations of Ali Javey include University of California & Old Dominion University.

Papers
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Ultra-high-yield growth of vertical single-walled carbon nanotubes: Hidden roles of hydrogen and oxygen

Guangyu Zhang, +10 more
- 08 Nov 2005 - 
TL;DR: In this article, an oxygen-assisted chemical vapor deposition method is developed to afford large-scale, highly reproducible, ultra-high-yield growth of vertical single-walled carbon nanotubes (V-SWNTs).
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Carbon Nanotube Transistor Arrays for Multistage Complementary Logic and Ring Oscillators

Ali Javey, +4 more
- 31 Jul 2002 - 
TL;DR: In this article, the authors demonstrate multistage complementary NOR, OR, NAND, and AND logic gates and ring oscillators with arrays of p-and n-type nanotube field effect transistors (FETs).
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Carbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-k Gate Dielectrics

Ali Javey, +7 more
- 16 Dec 2003 - 
TL;DR: In this article, the authors proposed to combine ohmic metal-tube contacts, high dielectric constant HfO2 films as gate insulators, and electrostatically doped nanotube segments as source/drain electrodes to obtain high ON currents, sub-threshold swings of ~ 70-80 mV/decade.
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Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

Hyunhyub Ko, +23 more
- 11 Nov 2010 - 
TL;DR: An epitaxial transfer method is used for the integration of ultrathin layers of single-crystal InAs on Si/SiO2 substrates, elucidating the critical role of quantum confinement in the transport properties of Ultrathin XOI layers and obtaining a high-quality InAs/dielectric interface.
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Diameter-dependent electron mobility of InAs nanowires.

Alexandra C. Ford, +19 more
- 01 Jan 2009 - 
TL;DR: Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowires radius, serving as a versatile and powerful platform for in-depth characterization of nanoscale, electronic materials.