Ali Javey

TL;DR: This work reports the first high-mobility III-V p-FET on Si, enabled by the epitaxial layer transfer of InGaSb heterostructures with nanoscale thicknesses, and presents an important advance in the field ofIII-V electronics.

TL;DR: High-performance solution-processed nanotube transistors with a 15 nm channel length obtained by combining a top-gate structure and gate insulators made of a high-dielectric-constant ZrO(2) film yields a performance comparable to that obtained with CVD nanotubes transistors, which indicates the potential for using solution- Processed SWNTs for future aggressively scaled transistor technology.

TL;DR: An inductively coupled plasma (ICP) process was used to synthesize transition metal dichalcogenides (TMDs) through a plasma-assisted selenization process of metal oxide (MOx) at a temperature as low as 250 °C.

TL;DR: This work employs a two-step epitaxial layer transfer process for the heterogeneous assembly of ultrathin membranes of III-V compound semiconductors on Si/SiO(2) substrates, demonstrating the utility of the XOI platform.