Journal ArticleDOI
Lanthanum-substituted bismuth titanate for use in non-volatile memories
TLDR
In this paper, the authors show that lanthanum-substituted bismuth titanate (SBT) thin films provide a promising alternative for FRAM applications, since they are fatigue-free on metal electrodes, they can be deposited at temperatures of ∼650°C and their values of Pr are larger than those of the SBT films.Abstract:
Non-volatile memory devices are so named because they retain information when power is interrupted; thus they are important computer components. In this context, there has been considerable recent interest1,2 in developing non-volatile memories that use ferroelectric thin films—‘ferroelectric random access memories’, or FRAMs—in which information is stored in the polarization state of the ferroelectric material. To realize a practical FRAM, the thin films should satisfy the following criteria: compatibility with existing dynamic random access memory technologies, large remnant polarization (Pr) and reliable polarization-cycling characteristics. Early work focused on lead zirconate titanate (PZT) but, when films of this material were grown on metal electrodes, they generally suffered from a reduction of Pr (‘fatigue’) with polarity switching. Strontium bismuth tantalate (SBT) and related oxides have been proposed to overcome the fatigue problem3, but such materials have other shortcomings, such as a high deposition temperature. Here we show that lanthanum-substituted bismuth titanate thin films provide a promising alternative for FRAM applications. The films are fatigue-free on metal electrodes, they can be deposited at temperatures of ∼650 °C and their values of Pr are larger than those of the SBT films.read more
Citations
More filters
Journal ArticleDOI
A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface
TL;DR: A model interface is examined between two insulating perovskite oxides—LaAlO3 and SrTiO3—in which the termination layer at the interface is controlled on an atomic scale, presenting a broad opportunity to tailor low-dimensional charge states by atomically engineered oxide heteroepitaxy.
Journal ArticleDOI
Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications
TL;DR: Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each that are among the hottest research topics of the last decades.
Journal ArticleDOI
Ferroelectric thin films: Review of materials, properties, and applications
Nava Setter,Dragan Damjanovic,L. Eng,Glen R. Fox,Spartak Gevorgian,Seungbum Hong,Angus I. Kingon,Hermann Kohlstedt,N. Y. Park,G. B. Stephenson,I. Stolitchnov,A. K. Taganstev,D. V. Taylor,Tomoaki Yamada,Stephen K. Streiffer +14 more
TL;DR: An overview of the state of the art in ferroelectric thin films is presented in this paper, where the authors review applications: micro-systems' applications, applications in high frequency electronics, and memories based on Ferroelectric materials.
Journal ArticleDOI
Atomic-scale imaging of carbon nanofibre growth
Stig Helveg,Carlos López-Cartes,Carlos López-Cartes,Jens Sehested,Poul L. Hansen,Clausen Bjerne Steffen,Jens R. Rostrup-Nielsen,Frank Abild-Pedersen,Jens K. Nørskov +8 more
TL;DR: Time-resolved, high-resolution in situ transmission electron microscope observations of the formation of carbon nanofibres from methane decomposition over supported nickel nanocrystals show that metallic step edges act as spatiotemporal dynamic growth sites and may be important for understanding other types of catalytic reactions and nanomaterial syntheses.
Journal ArticleDOI
Two‐Dimensional Dielectric Nanosheets: Novel Nanoelectronics From Nanocrystal Building Blocks
Minoru Osada,Takayoshi Sasaki +1 more
TL;DR: The progress made in the properties of dielectric nanosheets is reviewed, highlighting emerging functionalities in electronic applications and a perspective on the advantages offered by this class of materials for future nanoelectronics.
References
More filters
Journal ArticleDOI
Fatigue-free ferroelectric capacitors with platinum electrodes
C. A-Paz de Araujo,J. D. Cuchiaro,Larry D. McMillan,Michael C. Scott,James F. Scott,James F. Scott +5 more
TL;DR: In this article, the authors describe the preparation and characterization of thin-film capacitors using ferroelectric materials from a large family of layered perovskite oxides, exemplified by SrBi2Ta2O9, SRBi2NbTaO9 and SrBi4Ta4O15.
Journal ArticleDOI
The emergence of classical properties through interaction with the environment
Erich Joos,H. D. Zeh +1 more
TL;DR: The dependence of macroscopic systems upon their environment under the assumption that quantum theory is universally valid is studied in this paper, where scattering of photons and molecules turns out to be essential even in intergalactic space in restricting the observable properties by locally destroying the corresponding phase relations.
Journal ArticleDOI
The Physics of Ferroelectric Memories
TL;DR: In this article, the authors describe a scenario where they are in the last stages of typing their thesis, the year is 1980, and it's a hot, hazy summer afternoon, a thunderstorm brews on the horizon.
Journal ArticleDOI
Preparation and ferroelectric properties of SrBi2Ta2O9 thin films
TL;DR: Ferroelectric SrBi2Ta2O9 thin films were synthesized on Pt/Ti/SiO2/Si substrates using a solution deposition process, and structural and electrical properties were investigated as discussed by the authors.
Journal ArticleDOI
Beugung von Molekularstrahlen
I. Estermann,Otto Stern +1 more
TL;DR: In this article, aus der Gitterkonstante des Kristalls berechnete Wellenlange hat fur verschiedene m und υ den von de Broglie geforderten Wert λ=h/m · v.
Related Papers (5)
Electrical and Optical Properties of Ferroelectric Bi4Ti3O12 Single Crystals
S. E. Cummins,L. E. Cross +1 more