Sunae Seo

TL;DR: This work demonstrates a TaO(x)-based asymmetric passive switching device with which it was able to localize resistance switching and satisfy all aforementioned requirements, and eliminates any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.

TL;DR: Negative resistance behavior and reproducible resistance switching were found in polycrystalline NiO films deposited by dc magnetron reactive sputtering methods in this paper, where the negative resistance and the switching mechanism could be described by electron conduction related to metallic nickel defect states existing in deep levels and by small polaron hole hopping conduction.

TL;DR: In this paper, the bistable resistive memory switching in submicron sized NiO memory cells was investigated using a current-bias method, and anomalous resistance fluctuations between resistance states were observed during the resistive transition from high resistance state to low resistance state.

TL;DR: In this article, a series structure consisting of two Pt∕NiO∕Pt capacitors with different resistance values was proposed to reduce the reset current by two orders of magnitude.

TL;DR: In this paper, a single-layer graphene (SLG) ferroelectric field effect transistor (FFET) was demonstrated to be optically visible on a lead-zirconate-titanate (PZT) substrate.