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Benno Margesin
Researcher at fondazione bruno kessler
Publications - 192
Citations - 2559
Benno Margesin is an academic researcher from fondazione bruno kessler. The author has contributed to research in topics: Capacitive sensing & Surface micromachining. The author has an hindex of 26, co-authored 184 publications receiving 2371 citations.
Papers
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Journal ArticleDOI
lang1 0 0rang bar corner compensation for CMOS compatible anisotropic TMAH etching
TL;DR: In this paper, two 1'0'0 bar compensation structures have been used for convex corner compensation with 25% wt TMAH-water solution at 90 ± 1 °C temperature.
Interdigitated Low-Loss Ohmic RF-MEMS Switches
TL;DR: In this paper, an interdigitated design for MEMS RF-switches is applied to both a shunt and a series ohmic contact configuration, which shows insertion loss better than 0.8 dB and isolation better than 20 dB up to 13 GHz.
Journal ArticleDOI
Status of the SIMP Project: Toward the Single Microwave Photon Detection
David Alesini,D. Babusci,Carlo Barone,Bruno Buonomo,Matteo Mario Beretta,Lorenzo Bianchini,Gabriella Castellano,Fabio Chiarello,D. Di Gioacchino,Paolo Falferi,Giuseppe Felici,Giovanni Filatrella,L. Foggetta,A. Gallo,Claudio Gatti,Francesco Giazotto,G. Lamanna,Franco Ligabue,Nadia Ligato,Carlo Ligi,G. Maccarrone,Benno Margesin,Francesco Mattioli,Eugenio Monticone,Luca Oberto,Sergio Pagano,Federico Paolucci,Mauro Rajteri,A. Rettaroli,Luigi Rolandi,P. Spagnolo,Alessandra Toncelli,Guido Torrioli +32 more
TL;DR: In this paper, the SIMP project (2019-2021) aims to develop a single microwave photon detector by improving the sensitivity and the dark-count rate of two types of photodetectors: current-biased Josephson junction (CBJJ) and transition-edge sensor (TES) for the frequency range 10-50 GHz and 30-100 GHz.
Proceedings ArticleDOI
A Wide Tuning Range MEMS Varactor Based on a Toggle Push-Pull Mechanism
TL;DR: In this article, a novel wide tuning range MEMS varactor based on a toggle push-pull mechanism for high RF power applications and improved reliability has been presented, where the device anchoring utilizes a torsion spring mechanism which enables a full capacitance tuning range.
Proceedings ArticleDOI
Evolution of electrical parameters of dielectric-less ohmic RF-MEMS switches during continuous actuation stress
Augusto Tazzoli,Enrico Autizi,Marco Barbato,Gaudenzio Meneghesso,Francesco Solazzi,Paola Farinelli,Flavio Giacomozzi,Jacopo Iannacci,Benno Margesin,Roberto Sorrentino +9 more
TL;DR: In this paper, the evolution of the main electrical parameters of dielectric-less ohmic RF-MEMS cantilever-based switches during continuous actuation stress was investigated.