B
Bin Yu
Researcher at Southeast University
Publications - 325
Citations - 10296
Bin Yu is an academic researcher from Southeast University. The author has contributed to research in topics: Gate oxide & Layer (electronics). The author has an hindex of 47, co-authored 272 publications receiving 8982 citations. Previous affiliations of Bin Yu include National University of Singapore & Environment Canada.
Papers
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Proceedings ArticleDOI
FinFET scaling to 10 nm gate length
Bin Yu,Leland Chang,Shibly S. Ahmed,Haihong Wang,Scott A. Bell,Chih-Yuh Yang,Cyrus E. Tabery,Chau M. Ho,Qi Xiang,Tsu-Jae King,Jeffrey Bokor,Chenming Hu,Ming-Ren Lin,D. Kyser +13 more
TL;DR: In this paper, the authors report the design, fabrication, performance, and integration issues of double-gate FinFETs with the physical gate length being aggressively shrunk down to 10 nm and the fin width down to 12 nm.
Patent
MOSFET having a double gate
Bin Yu,Eric N. Paton +1 more
TL;DR: In this article, a double-gate MOSFET is described where a semiconductor body region is disposed over the bottom gate dielectric and a bottom gate electrode is disposed between a source and a drain.
Journal ArticleDOI
The eEF2 Kinase Confers Resistance to Nutrient Deprivation by Blocking Translation Elongation
Gabriel Leprivier,Marc Remke,Marc Remke,Barak Rotblat,Adrian M. Dubuc,Abigail Rachele F. Mateo,Marcel Kool,Sameer Agnihotri,Amal El-Naggar,Bin Yu,Syam Prakash Somasekharan,Brandon Faubert,Gaëlle Bridon,Cristina E. Tognon,Joan Mathers,Ryan Thomas,Amy Li,Adi Barokas,Brian Kwok,Mary Bowden,Stephanie Smith,Xiaochong Wu,Andrey Korshunov,Thomas Hielscher,Paul A. Northcott,Jason D. Galpin,Christopher A. Ahern,Ye Wang,Martin G. McCabe,Martin G. McCabe,V. Peter Collins,Russell G. Jones,Michael Pollak,Olivier Delattre,Martin E. Gleave,Eric Jan,Stefan M. Pfister,Stefan M. Pfister,Christopher G. Proud,W. Brent Derry,Michael D. Taylor,Poul H. Sorensen +41 more
TL;DR: It is reported that eukaryotic elongation factor 2 kinase (eEF2K), which is activated by AMP-kinase (AMPK), confers cell survival under acute nutrient depletion by blocking translation elongation.
Patent
Method for forming multiple structures in a semiconductor device
TL;DR: In this paper, a method of forming multiple structures in a semiconductor device includes depositing a film over a conductive layer, etching a trench in a portion of the film and forming adjacent the sidewalls of the trench.
Journal ArticleDOI
Climate sensitivity and response
George J. Boer,Bin Yu +1 more
TL;DR: In this paper, a robust proportionality between global mean radiative forcing and global mean surface air temperature response was found to be a measure of the overall strength of climate feedback processes and hence of global climate sensitivity.