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C. S. Selvanayagam

Researcher at Agency for Science, Technology and Research

Publications -  16
Citations -  714

C. S. Selvanayagam is an academic researcher from Agency for Science, Technology and Research. The author has contributed to research in topics: Through-silicon via & Stress (mechanics). The author has an hindex of 9, co-authored 15 publications receiving 668 citations.

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Journal ArticleDOI

Nonlinear Thermal Stress/Strain Analyses of Copper Filled TSV (Through Silicon Via) and Their Flip-Chip Microbumps

TL;DR: In this article, the nonlinear thermal stresses and strains at the interfaces between the copper, silicon, and dielectric have been determined for a wide-range of aspect ratios (of the silicon thickness and the TSV diameter).
Proceedings ArticleDOI

Nonlinear thermal stress/strain analyses of copper filled TSV (through silicon via) and their flip-chip microbumps

TL;DR: In this article, the nonlinear thermal stresses and strains at the interfaces between the copper, silicon, and dielectric have been determined for a wide-range of aspect ratios (of the silicon thickness and the TSV diameter).
Proceedings ArticleDOI

Development of through silicon via (TSV) interposer technology for large die (21×21mm) fine-pitch Cu/low-k FCBGA package

TL;DR: In this article, the TSV interposer was used to provide high wiring density interconnection, to minimize CTE mismatch to the Cu/low-k chip that is vulnerable to thermal-mechanical stress, and to improve electrical performance due to shorter interconnection from the chip to the substrate.
Journal ArticleDOI

Modeling Stress in Silicon With TSVs and Its Effect on Mobility

TL;DR: In this paper, the thermal stresses and strains induced on silicon due to the proximity of copper vias have been investigated for various geometries (via diameter, via pitch, silicon thickness, stacking layers) using finite element modeling.