Proceedings ArticleDOI
Directly patterned inorganic hardmask for EUV lithography
Jason K. Stowers,Alan J. Telecky,Michael Kocsis,Benjamin L. Clark,Douglas A. Keszler,Andrew Grenville,Christopher N. Anderson,Patrick P. Naulleau +7 more
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TLDR
In this article, a metal oxide patternable hardmask was designed for EUV lithography, which is highly absorbing (16 μm-1) and etch resistant (>100:1 for silicon).Abstract:
This paper describes a metal oxide patternable hardmask designed for EUV lithography. The material has imaged 15-nm
half-pitch by projection EUV exposure on the SEMATECH Berkeley MET, and 12-nm half-pitch by electron beam
exposure. The platform is highly absorbing (16 μm-1) and etch resistant (>100:1 for silicon). These properties enable
resist film thickness to be reduced to 20nm, thereby reducing aspect ratio and susceptibility to pattern collapse. New
materials and processes show a path to improved photospeed. This paper also presents data for on coating uniformity,
metal-impurity content, outgassing, pattern transfer, and resist strip.read more
Citations
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Journal ArticleDOI
Resist Materials and Processes for Extreme Ultraviolet Lithography
Toshiro Itani,Takahiro Kozawa +1 more
TL;DR: In this article, the resist materials and processes among the key technologies of extreme ultraviolet (EUV) lithography are reviewed and the focus of the development has shifted to the 16 nm node and beyond.
Patent
Solution processible hardmasks for high resolution lithography
TL;DR: In this paper, a solution processible metal oxide hardmask is described that can be formed from aqueous precursor solutions comprising polyoxometal clusters and anions, such as polyatomic anions.
Proceedings ArticleDOI
Critical challenges for EUV resist materials
Patrick P. Naulleau,Christopher N. Anderson,Lorie-Mae Baclea-an,Paul Denham,Simi George,Kenneth A. Goldberg,Gideon Jones,Brittany M. McClinton,Ryan Miyakawa,Seno Rekawa,Nathan Smith +10 more
TL;DR: The major issue for the 22-nm half-pitch node remains simultaneously meeting resolution, line-edge roughness (LER), and sensitivity requirements as discussed by the authors, although several materials have met the resolution requirements, LER and sensitivity remain a challenge.
Proceedings ArticleDOI
Evaluation of EUV resist performance with interference lithography towards 11 nm half-pitch and beyond
TL;DR: In this article, the performance of chemically-amplified resists and inorganic resists using EUV-IL has been evaluated with the aim of resolving patterns with CARs for 16 nm half pitch (HP) and 11 nm HP.
Proceedings ArticleDOI
Integrated fab process for metal oxide EUV photoresist
Andrew Grenville,Jeremy T. Anderson,Benjamin L. Clark,Peter De Schepper,Edson Joseph B,Michael Greer,Kai Jiang,Michael Kocsis,Stephen T. Meyers,Jason K. Stowers,Alan J. Telecky,Danilo De Simone,Geert Vandenberghe +12 more
TL;DR: Inpria as mentioned in this paper developed a patternable, metal oxide hardmasks as robust, high-resolution photoresists for EUV lithography, which achieved 13nm half-pitch at 35 mJ/cm2 on an ASML's NXE:3300B scanner.
References
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Journal ArticleDOI
Acid distribution in chemically amplified extreme ultraviolet resist
TL;DR: In this paper, the authors simulated acid generation induced by EUV photons in poly(4-hydroxystyrene) with 10wt% triphenylsulfonium triflate and clarified the extent of resolution blur in latent acid images and theoretical acid generation efficiency.
Journal ArticleDOI
Solution-Processed HafSOx and ZircSOx Inorganic Thin-Film Dielectrics and Nanolaminates
Jeremy T. Anderson,C. L. Munsee,Celia M. Hung,Tran M. Phung,Gregory S. Herman,David W. Johnson,John F. Wager,Douglas A. Keszler +7 more
TL;DR: In this paper, thin-film dielectrics and nanolaminates have been synthesized via aqueous-solution deposition of Hf and Zr sulfates, where facile gelation and vitrification of the precursor solution have been achieved without organic additives.
Journal ArticleDOI
Room-Temperature Preparation of ZrO2 Precursor Thin Film in an Aqueous Peroxozirconium-Complex Solution
TL;DR: In this article, a deposition method for room-temperature preparation of ZrO2 thin film using an aqueous solution was reported, which showed good adhesion to the substrate as peeloff was not found after either sonication or a Scotch-tape peel-off test.
Journal ArticleDOI
Advancements to the critical ionization dissolution model
TL;DR: In this paper, the critical ionization (CI) dissolution model was proposed to explain the dissolution of phenolic polymers in aqueous base, and a quantitative link between the CI model and experiment has been demonstrated for the dissolution rate and surface roughness dependence on polymer molecular weight.
Journal Article
The SEMATECH Berkeley MET pushing EUV development beyond 22-nm half pitch
TL;DR: Naulleau et al. as mentioned in this paper proposed a new imageable hard mask which can achieve a resolution of 8 nm half-pitch and generalized printing using conventional illumination down to 12 nm half pitch.