Corey Stull

TL;DR: In this article, the authors demonstrate titanium nitride coplanar waveguide resonators with mean quality factors exceeding two million and controlled trenching reaching 2.2μm in the silicon substrate.

TL;DR: In this article , a gate stack for high-dielectric-constant HfO2-ZrO2 superlattice heterostructures is presented, stabilized with mixed ferroelectric-antiferroelectric order, directly integrated onto Si transistors, and scaled down to approximately 20 ångströms.

TL;DR: In this article, the authors demonstrate titanium nitride coplanar waveguide resonators with mean quality factors exceeding two million and controlled trenching reaching 2.2 $\mu$m into the silicon substrate.

TL;DR: This work demonstrates the integration of superconducting, high-aspect ratio TSVs withsuperconducting qubits, and utilizes TSVs for baseband control and high-fidelity microwave readout of qubits using a two-chip, bump-bonded architecture.

TL;DR: A superconducting integrated circuit includes at least one resonator, including a substrate, a conductive layer disposed over a surface of the substrate with the conductive material including a substantially low stress polycrystalline Titanium Nitride (TiN) material having an internal stress less than about two hundred fifty MPa (magnitude) as mentioned in this paper.