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Narendra Parihar
Researcher at Indian Institute of Technology Bombay
Publications - 57
Citations - 857
Narendra Parihar is an academic researcher from Indian Institute of Technology Bombay. The author has contributed to research in topics: Negative-bias temperature instability & Metal gate. The author has an hindex of 15, co-authored 53 publications receiving 650 citations. Previous affiliations of Narendra Parihar include Indian Institutes of Technology & Katholieke Universiteit Leuven.
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BTI Analysis Tool—Modeling of NBTI DC, AC Stress and Recovery Time Kinetics, Nitrogen Impact, and EOL Estimation
TL;DR: In this article, a comprehensive modeling framework is presented to predict the time kinetics of negative bias temperature instability stress and recovery during and after dc and ac stresses and also during mixed dc-ac stress.
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Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors
Suraj Cheema,Nirmaan Shanker,Li Chen Wang,Cheng-Hsiang Hsu,Shang-Lin Hsu,Yu-Hung Liao,Matthew San Jose,Jorge Torres Gómez,Wriddhi Chakraborty,Wenshen Li,Jong-Ho Bae,Steven K. Volkman,Daewoong Kwon,Yoonsoo Rho,G. Pinelli,Ravi Rastogi,Dominick Pipitone,Corey Stull,Matthew A. Cook,Brian Tyrrell,Vladimir Stoica,Zhan Zhang,John W. Freeland,Christopher J. Tassone,Apurva Mehta,G. Saheli,D.L. Thompson,Dongwoo Suh,Won-Tae Koo,Kab-Jin Nam,D. J. Jung,Woo-Bin Song,Chung-Hsun Lin,Seung-Ji Nam,Jinseong Heo,Narendra Parihar,Costas P. Grigoropoulos,Padraic Shafer,Patrick Fay,Ramamoorthy Ramesh,Souvik Mahapatra,Jim Ciston,Suman Datta,Mohamed Mohamed,Chenming Hu,Sayeef Salahuddin +45 more
TL;DR: In this article , a gate stack for high-dielectric-constant HfO2-ZrO2 superlattice heterostructures is presented, stabilized with mixed ferroelectric-antiferroelectric order, directly integrated onto Si transistors, and scaled down to approximately 20 ångströms.
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Ultrafast Measurements and Physical Modeling of NBTI Stress and Recovery in RMG FinFETs Under Diverse DC–AC Experimental Conditions
Narendra Parihar,Uma Sharma,Richard G. Southwick,Miaomiao Wang,James H. Stathis,Souvik Mahapatra +5 more
TL;DR: In this article, a comprehensive modeling framework involving uncorrelated contributions from the generation of interface traps, hole trapping in preexisting, and generation of new bulk insulator traps is used to quantify measured data.
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A Modeling Framework for NBTI Degradation Under Dynamic Voltage and Frequency Scaling
TL;DR: In this article, the degradation and recovery of threshold voltage shift due to negative bias temperature instability is predicted using a double interface reaction-diffusion model with transient trap occupancy model and empirical stretched exponential equations are used to capture hole trapping and detrapping.
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A review of NBTI mechanisms and models
TL;DR: The Reaction-Diffusion model based comprehensive framework and the alternative Energy Well models are discussed and the model capabilities to simultaneously predict the temporal kinetics of stress and recovery are evaluated.