V
Victor M. Ustinov
Researcher at Russian Academy of Sciences
Publications - 68
Citations - 5189
Victor M. Ustinov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 28, co-authored 67 publications receiving 5096 citations.
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Journal ArticleDOI
Ultranarrow Luminescence Lines from Single Quantum Dots.
Marius Grundmann,Jürgen Christen,N. N. Ledentsov,J. Böhrer,Dieter Bimberg,S. S. Ruvimov,Peter Werner,U. Richter,Ulrich Gösele,J. Heydenreich,Victor M. Ustinov,A. Yu. Egorov,A. E. Zhukov,P. S. Kop’ev,Zh. I. Alferov +14 more
TL;DR: Thanarrow ultranarrow cathodoluminescence lines originating from single InAs quantum dots in a GaAs matrix for temperatures up to 50 K are reported, directly proving their $\ensuremath{\delta}$-function-like density of electronic states.
Journal ArticleDOI
InGaAs-GaAs quantum-dot lasers
Dieter Bimberg,N. Kirstaedter,Nikolai N. Ledentsov,Zh. I. Alferov,Petr S. Kop'ev,Victor M. Ustinov +5 more
TL;DR: The InGaAs-GaAs QD emission can be tuned between 0.95 /spl mu/m and 1.37 /spl middot/cm/sup -2/m at 300 K as mentioned in this paper.
Journal ArticleDOI
Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth.
N. N. Ledentsov,Vitaly Shchukin,Marius Grundmann,N. Kirstaedter,J. Böhrer,Oliver G. Schmidt,Dieter Bimberg,Victor M. Ustinov,A. Yu. Egorov,A. E. Zhukov,P. S. Kop’ev,Sergey V. Zaitsev,N. Yu. Gordeev,Zh. I. Alferov,A. I. Borovkov,A. O. Kosogov,S. S. Ruvimov,Peter Werner,Ulrich Gösele,J. Heydenreich +19 more
TL;DR: In this paper, a laterally ordered array of nanoscale structures inserted in a GaAs matrix, where each structure is composed of several vertically merging InAs parts, was found to decrease the radiative lifetime and to result in low energy shifts of the corresponding peaks in luminescence and absorption spectra.
Journal ArticleDOI
InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
Victor M. Ustinov,Nikolay A. Maleev,A. E. Zhukov,A. R. Kovsh,A. Yu. Egorov,A. V. Lunev,B. V. Volovik,Igor Krestnikov,Yu. G. Musikhin,N. A. Bert,P. S. Kop’ev,Zh. I. Alferov,Nikolai N. Ledentsov,Dieter Bimberg +13 more
TL;DR: In this article, the lateral size of InAs islands has been found to be approximately 1.5 times larger as compared to the InAs/GaAs case, whereas the island heights and surface densities were close in both cases.
Journal ArticleDOI
Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers
N. Kirstaedter,Oliver G. Schmidt,Nikolai N. Ledentsov,Dieter Bimberg,Victor M. Ustinov,A. Yu. Egorov,A. E. Zhukov,Mikhail V. Maximov,P. S. Kop’ev,Zh. I. Alferov +9 more
TL;DR: In this paper, gain measurements and calculations for InAs/GaAs quantum dot injection lasers are presented and the modal gain and estimation of the confinement factor by transmission electron microscopy yield an exceptionally large material gain of 6.8(± 1)×104 cm−1 at 80 A cm−2.