Journal ArticleDOI
High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser
Edik U. Rafailov,Maria Ana Cataluna,W. Sibbett,N. D. Il’inskaya,Yu. M. Zadiranov,A. E. Zhukov,Victor M. Ustinov,D.A. Livshits,A. R. Kovsh,Nikolai N. Ledentsov +9 more
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In this paper, a two-section quantum-dot laser that produces output powers up to 45 mW at 1260 nm was demonstrated. The pulse duration could be varied from 2 ps to as short as 400 fs at the 21 GHz pulse repetition rate.Abstract:
We demonstrate mode locking in a two-section quantum-dot laser that produces output powers up to 45 mW at 1260 nm. The pulse duration could be varied from 2 ps to as short as 400 fs at the 21 GHz pulse repetition rate.read more
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Journal ArticleDOI
Mode-locked quantum-dot lasers
TL;DR: In this article, the authors describe how semiconductor quantum-dot structures can provide an efficient means of amplifying and generating ultrafast (of the order of 100 fs), high-power and low-noise optical pulses, with the potential to boost the repetition rate of the pulses to beyond 1 THz.
Journal ArticleDOI
Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$ m
Francois Lelarge,Beatrice Dagens,J. Renaudier,Romain Brenot,Alain Accard,F. van Dijk,Dalila Make,O. Le Gouezigou,J.-G. Provost,Francis Poingt,Jean Landreau,Olivier Drisse,Estelle Derouin,B. Rousseau,Frederic Pommereau,Guang-Hua Duan +15 more
TL;DR: In this article, the InAs/InP quantum dash (QD) materials for lasers and amplifiers, and QD device performance with particular interest in optical communication are summarized.
Journal ArticleDOI
Passively modelocked surface-emitting semiconductor lasers
Ursula Keller,Anne C. Tropper +1 more
TL;DR: In this paper, the physical principles of ultrashort pulse generation in VECSELs are discussed, considering the role played by the semiconductor quantum well gain structure, and the saturable absorber.
Journal ArticleDOI
InGaAs Quantum-Dot Mode-Locked Laser Diodes
TL;DR: In this article, the authors present a selection of recent advances on two-section passively mode-locked InGaAs-based quantum-dot laser diodes for pulse generation for repetition rates ranging from 310 MHz to 240 GHz, with pulse durations ranging from the picosecond to the sub-400 fs regime.
Journal ArticleDOI
The development and application of femtosecond laser systems
TL;DR: Some background as well as recent progress in the development of femtosecond lasers are discussed together with a brief outline of a few representative emergent applications in biology and medicine that are underpinned by access to such sources.
References
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Journal ArticleDOI
Monolithic and multi-gigahertz mode-locked semiconductor lasers: constructions, experiments, models and applications
TL;DR: In this article, the authors present a systematic overview of experimental and theoretical results and approaches reported recently in the field of physics, technology and applications of monolithic mode-locked laser diodes.
Journal ArticleDOI
Short pulse generation using multisegment mode-locked semiconductor lasers
TL;DR: In this article, a mode-locked semiconductor laser which incorporates multiple contacting segments is found to give improved performance over single-segment designs, where the functions of gain, saturable absorption, gain modulation, gain frequency, repetition rate tuning, wavelength tuning and electrical pulse generation can be integrated on a single semiconductor chip.
Journal ArticleDOI
Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers
Paola Borri,Wolfgang Werner Langbein,Jørn Märcher Hvam,Frank Heinrichsdorff,Ming-Hua Mao,Dieter Bimberg +5 more
TL;DR: In this paper, the spectral hole-burning and carrier heating were investigated in detail in a set of InAs-InGaAs-GaAs quantum-dot (QD) amplifiers with femtosecond resolution.
Journal ArticleDOI
Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers
TL;DR: In this paper, a two-section, bistable quantum dot (QD) laser with an integrated intracavity QD saturable absorber was used for mode-locked pulses at a repetition rate of 7.4 GHz with a duration of 17 ps under appropriate bias conditions.
Journal ArticleDOI
35 GHz mode-locking of 1.3 μm quantum dot lasers
Matthias Kuntz,Gerrit Fiol,M. Lammlin,Dieter Bimberg,Mark G. Thompson,K.T. Tan,C Marinelli,Richard V. Penty,Ian H. White,V.M. Ustinov,A.E. Zhukov,Yu. M. Shernyakov,A. R. Kovsh +12 more
TL;DR: In this article, a ridge waveguide design that includes etching through the active layer was proposed for hybrid mode-locking at frequencies up to 20 GHz. But the minimum pulse width of the Fourier-limited pulses was 7ps with a peak power of 6mW Low uncorrelated timing jitter was found in cross correlation experiments.