D
D. Balma
Researcher at École Polytechnique Fédérale de Lausanne
Publications - 16
Citations - 357
D. Balma is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Lead zirconate titanate & Piezoelectricity. The author has an hindex of 10, co-authored 16 publications receiving 310 citations. Previous affiliations of D. Balma include École Normale Supérieure & Polytechnic University of Turin.
Papers
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Journal ArticleDOI
Resonant PZT MEMS Scanner for High-Resolution Displays
TL;DR: In this article, a resonant piezoelectric scanner is developed for high-resolution laser-scanning displays, which combines the principle of mechanical amplification with lead zirconate titanate (PZT) thin-film actuation.
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Characterization and Fatigue of the Converse Piezoelectric Effect in PZT Films for MEMS Applications
TL;DR: A measurement setup for the detailed study of the transverse piezoelectric coefficient in the converse (actuator) mode was developed in this paper, which allows the assessment of the stress in thin films on silicon cantilevers and provides a correlation of this stress with large and small signal responses to ferroelectric polarization and dielectric response, both as a function of slowly sweeping electric field.
Journal ArticleDOI
Magnetoelastic Clock System for Nanomagnet Logic
Marco Vacca,Mariagrazia Graziano,Luca Di Crescenzo,Alessandro Chiolerio,Andrea Lamberti,D. Balma,Giancarlo Canavese,Federica Celegato,Emanuele Enrico,Paola Tiberto,Luca Boarino,Maurizio Zamboni +11 more
TL;DR: This paper proposes an innovative voltage-controlled magnetoelastic clock system aware of the technological constraints risen by modern fabrication processes, and shows how circuits can be fabricated taking into account technological limitations, and evaluates the performance of the proposed system.
Journal ArticleDOI
Comparison of lead Zirconate Titanate thin films for microelectromechanical energy harvester with interdigitated and parallel plate electrodes
TL;DR: The best FOM of the IDE structures was 20% superior to that of the PPE structures while also having a voltage response that was ten times higher (12.9 mV/μ strain) and the ferroelectric loops showed a higher saturation polarization, a higher coercive field, and less back-switching for the IDE case.
Proceedings ArticleDOI
High frequency torsional MEMS scanner for displays
Utku Baran,Dean R. Brown,Sven Holmstrom,D. Balma,Wyatt O. Davis,Andrea Mazzalai,Paul Muralt,Hakan Urey +7 more
TL;DR: In this paper, a high frequency resonant torsional microscanner actuated with thin film PZT is modeled, fabricated, and characterized, which provides significant power and size advantages compared to electromagnetically and electrostatically actuated scanners.